High-speed light sensing apparatus iii

ABSTRACT

A circuit, including: a photodetector including a first readout terminal and a second readout terminal different than the first readout terminal; a first readout circuit coupled with the first readout terminal and configured to output a first readout voltage; a second readout circuit coupled with the second readout terminal and configured to output a second readout voltage; and a common-mode analog-to-digital converter (ADC) including: a first input terminal coupled with a first voltage source; a second input terminal coupled with a common-mode generator, the common-mode generator configured to receive the first readout voltage and the second readout voltage, and to generate a common-mode voltage between the first and second readout voltages; and a first output terminal configured to output a first output signal corresponding to a magnitude of a current generated by the photodetector.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.16/521,974, filed on Jul. 25, 2019, which is a continuation of U.S.patent application Ser. No. 15/944,658, filed on Apr. 3, 2018, now U.S.Pat. No. 10,418,407, which is a continuation in part of and claims thebenefit of U.S. patent application Ser. No. 15/908,447, filed on Feb.28, 2018, now U.S. Pat. No. 10,886,309, which claims the right ofpriority to U.S. Provisional Application No. 62/465,139, filed on Feb.28, 2017; U.S. Provisional Patent Application No. 62/479,322, filed onMar. 31, 2017; U.S. Provisional Patent Application No. 62/504,531, filedon May 10, 2017; U.S. Provisional Patent Application No. 62/485,003,filed on Apr. 13, 2017; U.S. Provisional Patent Application No.62/511,977, filed on May 27, 2017; U.S. Provisional Patent ApplicationNo. 62/534,179, filed on Jul. 18, 2017; U.S. Provisional PatentApplication No. 62/561,266, filed on Sep. 21, 2017; U.S. ProvisionalPatent Application No. 62/613,054, filed on Jan. 3, 2018; U.S.Provisional Patent Application No. 62/617,317, filed on Jan. 15, 2018;and which is a continuation in part of and claims the benefit of U.S.patent application Ser. No. 15/338,660, filed on Oct. 31, 2016, now U.S.Pat. No. 10,254,389, which claims the right of priority to U.S.Provisional Patent Application No. 62/294,436, filed on Feb. 12, 2016;U.S. Provisional Patent Application No. 62/271,386, filed on Dec. 28,2015; and U.S. Provisional Patent Application No. 62/251,691, filed onNov. 6, 2015, all of which are incorporated by reference in theirentirety.

The U.S. patent application Ser. No. 15/944,658, filed on Apr. 3, 2018,also claims the right of priority to U.S. Provisional Application No.62/481,131, filed on Apr. 4, 2017, U.S. Provisional Application No.62/511,977, filed on May 27, 2017, U.S. Provisional Application No.62/542,329, filed on Aug. 8, 2017, U.S. Provisional Application No.62/561,256, filed on Sep. 21, 2017, U.S. Provisional Application No.62/581,720, filed on Nov. 5, 2017, U.S. Provisional Application No.62/581,777, filed on Nov. 5, 2017, and U.S. Provisional Application No.62/596,914, filed on Dec. 11, 2017, all of which are incorporated byreference in their entirety.

BACKGROUND

This specification relates to detecting light using a photodetector.

Light propagates in free space or an optical medium is coupled to aphotodetector that converts an optical signal to an electrical signalfor processing.

SUMMARY

According to one innovative aspect of the subject matter described inthis specification, light reflected from a three-dimensional object maybe detected by photodetectors of an imaging system. The photodetectorsconvert the detected light into electrical charges. Each photodetectormay include two groups of switches that collect the electrical charges.The collection of the electrical charges by the two groups of switchesmay be altered over time, such that the imaging system may determinephase information of the sensed light. The imaging system may use thephase information to analyze characteristics associated with thethree-dimensional object including depth information or a materialcomposition. The imaging system may also use the phase information toanalyze characteristics associated with eye-tracking, gesturerecognition, 3-dimensional model scanning/video recording, motiontracking, and/or augmented/virtual reality applications.

In general, one innovative aspect of the subject matter described inthis specification can be embodied in a circuit that includes: aphotodetector including a first readout terminal and a second readoutterminal different than the first readout terminal; a first readoutsubcircuit including a first MOSFET transistor and a second MOSFETtransistor, the first MOSFET transistor including a first gate terminalcoupled with a first control voltage source, a first channel terminal,and a second channel terminal coupled with the first readout terminal ofthe photodetector, and the second MOSFET transistor including a secondgate terminal coupled with a second control voltage source, a thirdchannel terminal coupled with a supply voltage node, and a fourthchannel terminal coupled with the first channel terminal; and a secondreadout subcircuit including a third MOSFET transistor and a fourthMOSFET transistor, the third MOSFET transistor including a third gateterminal coupled with the first control voltage source, a fifth channelterminal, and a sixth channel terminal coupled with the second readoutterminal of the photodetector, and the fourth MOSFET transistorincluding a fourth gate terminal coupled with the second control voltagesource, a seventh channel terminal coupled with the supply voltage node,and an eighth channel terminal coupled with the fifth channel terminal.During operation of the circuit, the first control voltage sourcegenerates a first control voltage configured to create a first voltagedifference between a supply voltage of the supply voltage node and afirst voltage of the first readout terminal, and to create a secondvoltage difference between the supply voltage of the supply voltage nodeand a second voltage of the second readout terminal.

Embodiments of the circuit can include one or more of the followingfeatures. For example, during operation of the circuit, the firstcontrol voltage is configured to operate the first and third MOSFETtransistors in respective subthreshold regions or saturation regions.

In some embodiments, the first voltage difference and the second voltagedifference are greater than or equal to 10% of the supply voltage.

In some embodiments, during operation of the circuit, the first controlvoltage source reduces a first dark current collected through the firstreadout terminal, and a second dark current collected through the secondreadout terminal relative to a comparable circuit without the first andthird MOSFET transistors.

In some embodiments, the photodetector further includes a p-doped body;the first and second readout terminals include n-doped regions; and thefirst and the third MOSFET transistors are n-type MOSFET transistors.

In some embodiments, the photodetector further includes a n-doped body;the first and second readout terminals include p-doped regions; and thefirst and the third MOSFET transistors are p-type MOSFET transistors.

In some embodiments, the photodetector is a switched photodetectorconfigured for time-of-flight detection.

In some embodiments, the photodetector further includes a lightabsorption region including germanium. The photodetector can furtherinclude a first control terminal and a second control terminal. Thephotodetector can include a recess, and at least a portion of the lightabsorption region can be embedded in the recess.

Another innovative aspect of the subject matter described in thisspecification can be embodied in a method for operating a circuitincluding a photodetector having a first readout terminal coupled with afirst readout subcircuit and a second readout terminal coupled with asecond readout subcircuit, the method including: generating, through afirst control voltage source coupled with the first readout subcircuitand the second readout subcircuit, a first control voltage configured tooperate a first MOSFET transistor of the first readout subcircuit and athird MOSFET transistors of the second readout subcircuit in respectivesubthreshold regions or saturation regions; and performing aphotodetector readout step including setting a first output terminal ofthe first readout subcircuit to a fifth voltage and a second outputterminal of the second readout subcircuit to a sixth voltage, whereincontrolling of the first control voltage source creates a first voltagedifference between a supply voltage of the first and second readoutsubcircuits and a first voltage of the first readout terminal, andcreates a second voltage difference between the supply voltage and asecond voltage of the second readout terminal.

Another innovative aspect of the subject matter described in thisspecification can be embodied in a circuit, including: a light emittingdevice including a cathode coupled with a first supply voltage node andan anode; a MOSFET transistor including a gate terminal coupled with aninput signal source, a first channel terminal coupled with the anode ofthe light emitting device, and a second channel terminal coupled with asecond supply voltage node; a first inductor including a first terminalcoupled with a third supply voltage node or a current source and asecond terminal coupled with the anode of the light emitting device; anda second inductor including a third terminal coupled with the gateterminal of the MOSFET transistor and a fourth terminal. A secondinductance of the second inductor is set such that a LC resonancefrequency associated with the gate terminal of the MOSFET transistorcorresponds to an input frequency of the input signal source.

Embodiments of the circuit can include one or more of the followingfeatures. For example, the circuit can further include a first capacitorarranged between the input signal source and the gate terminal of theMOSFET transistor, the first capacitor including a first terminalcoupled with the gate terminal of the MOSFET transistor and a secondterminal coupled with the input signal source, and the fourth terminalof the second inductor can be coupled with a MOSFET bias voltage source.

In some embodiments, during operation of the circuit, the MOSFET biasvoltage source is controlled to adjust a duty cycle of light output bythe light emitting device.

In some embodiments, the light emitting device includes a light emittingdiode array or a laser diode array.

Another innovative aspect of the subject matter described in thisspecification can be embodied in a circuit, including: a photodetectorincluding a first readout terminal and a second readout terminaldifferent than the first readout terminal; a first readout circuitcoupled with the first readout terminal and configured to output a firstreadout voltage; a second readout circuit coupled with the secondreadout terminal and configured to output a second readout voltage; anda common-mode analog-to-digital converter (ADC) including: a first inputterminal coupled with a first voltage source; a second input terminalcoupled with a common-mode generator, the common-mode generatorconfigured to receive the first readout voltage and the second readoutvoltage, and to generate a common-mode voltage between the first andsecond readout voltages; and a first output terminal configured tooutput a first output signal corresponding to a magnitude of a currentgenerated by the photodetector.

Embodiments of the circuit can include one or more of the followingfeatures. For example, the circuit can further include adifferential-mode ADC including: a third input terminal coupled with thefirst readout circuit and configured to receive the first readoutvoltage; a fourth input terminal coupled with the second readout circuitand configured to receive the second readout voltage; and a secondoutput terminal configured to output a second output signalcorresponding to a time-of-flight information generated by thephotodetector, wherein the circuit is operable to simultaneouslygenerate the first output signal and the second output signal.

In some embodiments, the first readout circuit includes: a firstcapacitor coupled with the first readout terminal; and a first sourcefollower circuit coupled with the first capacitor and configured togenerate the first readout voltage, and the second readout circuitincludes: a second capacitor coupled with the second readout terminal;and a second source follower circuit coupled with the second capacitorand configured to generate the second readout voltage.

In some embodiments, the first readout circuit includes: a first MOSFETtransistor including a first gate terminal coupled with a first controlvoltage source, a first channel terminal, and a second channel terminalcoupled with the first readout terminal of the photodetector; a secondMOSFET transistor including a second gate terminal coupled with a secondcontrol voltage source, a third channel terminal coupled with a supplyvoltage node, and a fourth channel terminal coupled with the firstchannel terminal; a first capacitor coupled with the first channelterminal of the first MOSFET transistor; and a first source followercircuit coupled with the first capacitor and configured to generate thefirst readout voltage. The second readout circuit includes: a thirdMOSFET transistor including a third gate terminal coupled with the firstcontrol voltage source, a fifth channel terminal, and a sixth channelterminal coupled with the second readout terminal of the photodetector;a fourth MOSFET transistor including a fourth gate terminal coupled withthe second control voltage source, a seventh channel terminal coupledwith the supply voltage node, and an eighth channel terminal coupledwith the fifth channel terminal; a second capacitor coupled with thefifth channel terminal of the third MOSFET transistor; and a secondsource follower circuit coupled with the second capacitor and configuredto generate the second readout voltage.

In some embodiments, the first voltage source includes a third sourcefollower circuit.

Another innovative aspect of the subject matter described in thisspecification can be embodied in a method for characterizing performanceof a time-of-flight detection apparatus including a photodetector havinga first readout terminal coupled with a first readout circuit andconfigured to output a first readout voltage, and a second readoutterminal coupled with a second readout circuit and configured to outputa second readout voltage, the method including: measuring a dark currentof the photodetector by measuring a common-mode output signal betweenthe first and second readout voltages in absence of ambient light and atime-of-flight optical signal; determining that the dark current of thephotodetector is greater than a first value; and based on thedetermination that the dark current of the photodetector is greater thanthe first value, determining that the time-of-flight detection apparatusdoes not meet a performance specification.

Embodiments of the method can include one or more of the followingfeatures. For example, measuring the dark current of the photodetectorcan include: performing, through a one-bit ADC or a multi-bit ADC, oneor more measurements of the common-mode output signal between the firstand second readout voltages in absence of ambient light and thetime-of-flight optical signal; and determining the dark current based onthe one or more measurements of the common-mode output signal.

In some embodiments, the one or more measurements are a plurality ofmeasurements, and each of the plurality of measurements corresponds todifferent integration times or different replica voltages input to theone-bit ADC or the multi-bit ADC.

In some embodiments, the method further includes: measuring ademodulation contrast of the time-of-flight detection apparatus bymeasuring a differential-mode output signal between the first and secondreadout voltages in presence of a time-of-flight optical signal;determining that the demodulation contrast of the time-of-flightdetection apparatus is lower than a second value; and based on thedetermination that the demodulation contrast of the time-of-flightdetection apparatus is lower than the second value, determining that thetime-of-flight detection apparatus does not meet the performancespecification.

Advantageous implementations may include one or more of the followingfeatures. Germanium is an efficient absorption material fornear-infrared wavelengths, which reduces the problem of slowphoto-carriers generated at a greater substrate depth when aninefficient absorption material, e.g., silicon, is used. For aphotodetector having p- and n-doped regions fabricated at two differentdepths, the photo-carrier transit distance is limited by the depth, andnot the width, of the absorption material. Consequently, if an efficientabsorption material with a short absorption length is used, the distancebetween the p- and n-doped regions can also be made short so that even asmall bias may create a strong field resulting into an increasedoperation speed. For such a photodetector, two groups of switches may beinserted and arranged laterally in an interdigitated arrangement, whichmay collect the photo-carriers at different optical phases for atime-of-flight system. An increased operation speed allows the use of ahigher modulation frequency in a time-of-flight system, giving a greaterdepth resolution. In a time-of-flight system where the peak intensity ofoptical pulses is increased while the duty cycle of the optical pulsesis decreased, the signal-to-noise ratio (and hence depth accuracy) canbe improved while maintaining the same power consumption for thetime-of-flight system. This is made possible when the operation speed isincreased so that the duty cycle of the optical pulses can be decreasedwithout distorting the pulse shape. In addition, by using germanium asthe absorption material, optical pulses at a wavelength longer than 1 μmcan be used. As longer NIR wavelengths (e.g. 1.31 μm, 1.4 μm, 1.55 μm)are generally accepted to be safer to the human eye, optical pulses canbe output at a higher intensity at longer wavelengths to improvesignal-to-noise-ratio (and hence a better depth accuracy) whilesatisfying eye-safety requirements.

The details of one or more implementations are set forth in theaccompanying drawings and the description below. Other potentialfeatures and advantages will become apparent from the description, thedrawings, and the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A, 1B, 1C, and 1D are examples of a switched photodetector.

FIGS. 2A, 2B, 2C and 2D are examples of a switched photodetector.

FIGS. 3A, 3B, 3C, and 3D are examples of a switched photodetector.

FIGS. 4A, 4B, 4C, 4D, and 4E are examples of a switched photodetector.

FIGS. 4F-4I illustrate an example design for selectively forming anabsorption layer on a substrate.

FIGS. 5A-5C are examples of a photodetector.

FIGS. 5D-5K are examples of a switched photodetector.

FIGS. 6A-6B are examples of a switched photodetector.

FIGS. 7A-7B are cross-sectional views of example configurations ofmicrolenses integrated with photodetectors.

FIGS. 8A-8C are examples of a switch for a switched photodetector.

FIGS. 9A-9E are examples of an electrical terminal for a switchedphotodetector.

FIGS. 10A-10I are example configurations of a photodetector with anabsorption region and a substrate.

FIGS. 11A-11F are top and side views of examples of switchedphotodetectors.

FIGS. 12A-12H are top and side views of examples of switchedphotodetectors.

FIGS. 13A-13G are top and side views of examples of switchedphotodetectors.

FIGS. 14A-14B are top views of examples of switched photodetectors.

FIGS. 15A-15G are cross-sectional views of example configurations ofsensor pixel isolation.

FIGS. 16A-16J are cross-sectional views of example configurations ofphotodetectors.

FIGS. 17A-17E are cross-sectional views of example configurations ofabsorption region surface modification.

FIGS. 18A-18G show top and side views of example switchedphotodetectors.

FIGS. 19A-19H show top and side views of example switchedphotodetectors.

FIGS. 20A-20L show top and side views of example switchedphotodetectors.

FIGS. 21A-21F show top and side views of example switchedphotodetectors.

FIGS. 22A-22D show top and side views of example switchedphotodetectors.

FIGS. 23A-23B show top and side views of an example switchedphotodetector.

FIGS. 24A-24G show top and side views of example switchedphotodetectors.

FIGS. 25A-25H show top and side views of example switchedphotodetectors.

FIG. 26 is an example unit cell of rectangular photodetectors.

FIG. 27 is an example rectangular switched photodetector withphoto-transistor gain.

FIG. 28A is a block diagram of an example of an imaging system.

FIGS. 28B-28C show examples of techniques for determiningcharacteristics of an object using an imaging system.

FIG. 29 shows an example of a flow diagram for determiningcharacteristics of an object using an imaging system.

FIG. 30 shows a block diagram of an example receiver unit fortime-of-flight (ToF) detection.

FIGS. 31A-31I show schematic and cross-sectional views of examples ofToF receiver unit with increased capacitance.

FIG. 32 shows a block diagram of an example receiver unit for ToFdetection.

FIGS. 33A-33E show cross-sectional schematic views of example receiverunits for ToF detection.

FIG. 34 shows a cross-sectional schematic view of an example bondingprocess of an example receiver unit for ToF detection.

FIG. 35 shows a schematic diagram of a circuit for operating a ToFpixel.

FIGS. 36A and 36B show schematic side views of an example testingapparatus.

FIG. 37A shows a schematic diagram of a circuit for digitizingmeasurements from ToF pixels.

FIGS. 37B and 37C show schematic diagrams of examples of a pixelcircuit.

FIG. 37D shows a schematic diagram of an example common-mode detectioncircuit.

FIG. 37E shows an example timing diagram associated with operation ofthe circuit of FIG. 37A.

FIG. 37F shows an example of a flow diagram for characterizingperformance of a ToF detection apparatus.

FIGS. 38A and 38B show schematic diagrams of circuits for operating alight emitting device.

Like reference numbers and designations in the various drawings indicatelike elements. It is also to be understood that the various exemplaryembodiments shown in the figures are merely illustrative representationsand are not necessarily drawn to scale.

DETAILED DESCRIPTION

Photodetectors may be used to detect optical signals and convert theoptical signals to electrical signals that may be further processed byanother circuitry. In time-of-flight (TOF) applications, depthinformation of a three-dimensional object may be determined using aphase difference between a transmitted light pulse and a detected lightpulse. For example, a two-dimensional array of pixels may be used toreconstruct a three-dimensional image of a three-dimensional object,where each pixel may include one or more photodetectors for derivingphase information of the three-dimensional object. In someimplementations, time-of-flight applications use light sources havingwavelengths in the near-infrared (NIR) range. For example, alight-emitting-diode (LED) may have a wavelength of 850 nm, 940 nm, 1050nm, or 1.3 μm to 1.6 μm. Some photodetectors may use silicon as anabsorption material, but silicon is an inefficient absorption materialfor NIR wavelengths. Specifically, photo-carriers may be generateddeeply (e.g., greater than 10 μm in depth) in the silicon substrate, andthose photo-carriers may drift and/or diffuse to the photodetectorjunction slowly, which results in a decrease in the operation speed.Moreover, a small voltage swing is typically used to controlphotodetector operations in order to minimize power consumption. For alarge absorption area (e.g., 10 μm in diameter), the small voltage swingcan only create a small lateral/vertical field across the largeabsorption area, which affects the drift velocity of the photo-carriersbeing swept across the absorption area. The operation speed is thereforefurther limited. For TOF applications using NIR wavelengths, a switchedphotodetector with innovative design structures and/or with the use ofgermanium-silicon (GeSi) as an absorption material addresses thetechnical issues discussed above. In this application, the term“photodetector” may be used interchangeably with the term “opticalsensor”. In this application, the term “germanium-silicon (GeSi)” refersto a GeSi alloy with alloy composition ranging from 1% germanium (Ge),i.e., 99% silicon (Si), to 99% Ge, i.e., 1% of Si. In this application,the GeSi material may be grown using a blanket epitaxy, a selectiveepitaxy, or other applicable techniques. Furthermore, an absorptionlayer comprising the GeSi material may be formed on a planar surface, amesa top surface, or a trench bottom surface at least partiallysurrounded by an insulator (ex: oxide, nitrite), a semiconductor (ex:Si, Ge), or their combinations. Furthermore, a strained super latticestructure or a multiple quantum well structure including alternativelayers such as GeSi layers with two or more different alloy compositionsmay be used for the absorption layer. Furthermore, a Si layer or a GeSilayer with a low Ge concentration (e.g., <10%) may be used to passivatethe surface of a GeSi layer with a high Ge concentration (e.g., >50%),which may reduce a dark current or a leakage current at the surface ofthe GeSi layer with high Ge concentration.

FIG. 1A is an example switched photodetector 100 for converting anoptical signal to an electrical signal. The switched photodetector 100includes an absorption layer 106 fabricated on a substrate 102. Thesubstrate 102 may be any suitable substrate where semiconductor devicescan be fabricated on. For example, the substrate 102 may be a siliconsubstrate. The absorption layer 106 includes a first switch 108 and asecond switch 110.

In general, the absorption layer 106 receives an optical signal 112 andconverts the optical signal 112 into electrical signals. The absorptionlayer 106 may be intrinsic, p-type, or n-type. In some implementations,the absorption layer 106 may be formed from a p-type GeSi material. Theabsorption layer 106 is selected to have a high absorption coefficientat the desired wavelength range. For NIR wavelengths, the absorptionlayer 106 may be a GeSi mesa, where the GeSi absorbs photons in theoptical signal 112 and generates electron-hole pairs. The materialcomposition of germanium and silicon in the GeSi mesa may be selectedfor specific processes or applications. In some implementations, theabsorption layer 106 is designed to have a thickness t. For example, for850 nm or 940 nm wavelength, the thickness of the GeSi mesa may beapproximately 1 μm to have a substantial quantum efficiency. In someimplementations, the surface of the absorption layer 106 is designed tohave a specific shape. For example, the GeSi mesa may be circular,square, or rectangular depending on the spatial profile of the opticalsignal 112 on the surface of the GeSi mesa. In some implementations, theabsorption layer 106 is designed to have a lateral dimension d forreceiving the optical signal 112. For example, the GeSi mesa may have acircular or a rectangular shape, where d can range from 1 μm to 50 μm.

A first switch 108 and a second switch 110 have been fabricated in theabsorption layer 106. The first switch 108 is coupled to a first controlsignal 122 and a first readout circuit 124. The second switch 110 iscoupled to a second control signal 132 and a second readout circuit 134.In general, the first control signal 122 and the second control signal132 control whether the electrons or the holes generated by the absorbedphotons are collected by the first readout circuit 124 or the secondreadout circuit 134.

In some implementations, the first switch 108 and the second switch 110may be fabricated to collect electrons. In this case, the first switch108 includes a p-doped region 128 and an n-doped region 126. Forexample, the p-doped region 128 may have a p+ doping, where theactivated dopant concentration may be as high as a fabrication processmay achieve, e.g., the peak concentration may be about 5×10²⁰ cm⁻³ whenthe absorption layer 106 is germanium and doped with boron. In someimplementation, the doping concentration of the p-doped region 128 maybe lower than 5×10²⁰ cm⁻³ to ease the fabrication complexity at theexpense of an increased contact resistance. The n-doped region 126 mayhave an n+ doping, where the activated dopant concentration may be ashigh as a fabrication process may achieve, e.g., the peak concentrationmay be about 1×10²⁰ cm⁻³ when the absorption layer 106 is germanium anddoped with phosphorous. In some implementation, the doping concentrationof the n-doped region 126 may be lower than 1×10²⁰ cm⁻³ to ease thefabrication complexity at the expense of an increased contactresistance. The distance between the p-doped region 128 and the n-dopedregion 126 may be designed based on fabrication process design rules. Ingeneral, the closer the distance between the p-doped region 128 and then-doped region 126, the higher the switching efficiency of the generatedphoto-carriers. However, reducing of the distance between the p-dopedregion 128 and the n-doped region 126 may increase a dark currentassociated with a PN junction formed between the p-doped region 128 andthe n-doped region 126. As such, the distance may be set based on theperformance requirements of the switched photodetector 100. The secondswitch 110 includes a p-doped region 138 and an n-doped region 136. Thep-doped region 138 is similar to the p-doped region 128, and the n-dopedregion 136 is similar to the n-doped region 126.

In some implementations, the p-doped region 128 is coupled to the firstcontrol signal 122. For example, the p-doped region 128 may be coupledto a voltage source, where the first control signal 122 may be an ACvoltage signal from the voltage source. In some implementations, then-doped region 126 is coupled to the readout circuit 124. The readoutcircuit 124 may be in a three-transistor configuration consisting of areset gate, a source-follower, and a selection gate, a circuit includingfour or more transistors, or any suitable circuitry for processingcharges. In some implementations, the readout circuit 124 may befabricated on the substrate 102. In some other implementations, thereadout circuit 124 may be fabricated on another substrate andintegrated/co-packaged with the switched photodetector 100 via die/waferbonding or stacking.

The p-doped region 138 is coupled to the second control signal 132. Forexample, the p-doped region 138 may be coupled to a voltage source,where the second control signal 132 may be an AC voltage signal havingan opposite phase from the first control signal 122. In someimplementations, the n-doped region 136 is coupled to the readoutcircuit 134. The readout circuit 134 may be similar to the readoutcircuit 124.

The first control signal 122 and the second control signal 132 are usedto control the collection of electrons generated by the absorbedphotons. For example, when voltages are used, if the first controlsignal 122 is biased against the second control signal 132, an electricfield is created between the p-doped region 128 and the p-doped region138, and free electrons drift towards the p-doped region 128 or thep-doped region 138 depending on the direction of the electric field. Insome implementations, the first control signal 122 may be fixed at avoltage value V_(i), and the second control signal 132 may alternatebetween voltage values V_(i)±ΔV. The direction of the bias valuedetermines the drift direction of the electrons. Accordingly, when oneswitch (e.g., the first switch 108) is switched “on” (i.e., theelectrons drift towards the p-doped region 128), the other switch (e.g.,the second switch 110) is switched “off” (i.e. the electrons are blockedfrom the p-doped region 138). In some implementations, the first controlsignal 122 and the second control signal 132 may be voltages that aredifferential to each other.

In general, a difference (before equilibrium) between the Fermi level ofa p-doped region and the Fermi level of an n-doped region creates anelectric field between the two regions. In the first switch 108, anelectric field is created between the p-doped region 128 and the n-dopedregion 126. Similarly, in the second switch 110, an electric field iscreated between the p-doped region 138 and the n-doped region 136. Whenthe first switch 108 is switched “on” and the second switch 110 isswitched “off”, the electrons drift toward the p-doped region 128, andthe electric field between the p-doped region 128 and the n-doped region126 further carries the electrons to the n-doped region 126. The readoutcircuit 124 may then be enabled to process the charges collected by then-doped region 126. On the other hand, when the second switch 110 isswitched “on” and the first switch 108 is switched “off”, the electronsdrift toward the p-doped region 138, and the electric field between thep-doped region 138 and the n-doped region 136 further carries theelectrons to the n-doped region 136. The readout circuit 134 may then beenabled to process the charges collected by the n-doped region 136.

In some implementations, a voltage may be applied between the p-dopedand the n-doped regions of a switch to operate the switch in anavalanche regime to increase the sensitivity of the switchedphotodetector 100. For example, in the case of an absorption layer 106including GeSi, when the distance between the p-doped region 128 and then-doped region 126 is about 100 nm, it is possible to apply a voltagethat is less than 7 V to create an avalanche gain between the p-dopedregion 128 and the n-doped region 126.

In some implementations, the substrate 102 may be coupled to an externalcontrol 116. For example, the substrate 102 may be coupled to anelectrical ground, or a preset voltage less than the voltages at then-doped regions 126 and 136. In some other implementations, thesubstrate 102 may be floated and not coupled to any external control.

FIG. 1B is an example switched photodetector 160 for converting anoptical signal to an electrical signal. The switched photodetector 160is similar to the switched photodetector 100 in FIG. 1A, but that thefirst switch 108 and the second switch 110 further includes an n-wellregion 152 and an n-well region 154, respectively. In addition, theabsorption layer 106 may be a p-doped region. In some implementations,the doping level of the n-well regions 152 and 154 may range from 10¹⁵cm⁻³ to 10¹⁷ cm⁻³. The doping level of the absorption layer 106 mayrange from 10¹⁴ cm⁻³ to 10¹⁶ cm⁻³.

The arrangement of the p-doped region 128, the n-well region 152, thep-doped absorption layer 106, the n-well region 154, and the p-dopedregion 138 forms a PNPNP junction structure. In general, the PNPNPjunction structure reduces a leakage current from the first controlsignal 122 to the second control signal 132, or alternatively from thesecond control signal 132 to the first control signal 122. Thearrangement of the n-doped region 126, the p-doped absorption layer 106,and the n-doped region 136 forms an NPN junction structure. In general,the NPN junction structure reduces a charge coupling from the firstreadout circuit 124 to the second readout circuit 134, or alternativelyfrom the second readout circuit 134 to the first readout circuit 124.

In some implementations, the p-doped region 128 is formed entirelywithin the n-well region 152. In some other implementations, the p-dopedregion 128 is partially formed in the n-well region 152. For example, aportion of the p-doped region 128 may be formed by implanting thep-dopants in the n-well region 152, while another portion of the p-dopedregion 128 may be formed by implanting the p-dopants in the absorptionlayer 106. Similarly, in some implementations, the p-doped region 138 isformed entirely within the n-well region 154. In some otherimplementations, the p-doped region 138 is partially formed in then-well region 154. In some implementations, the depth of the n-wellregions 152 and 154 is shallower than the p-doped regions 128 and 138.

FIG. 1C is an example switched photodetector 170 for converting anoptical signal to an electrical signal. The switched photodetector 170is similar to the switched photodetector 100 in FIG. 1A, but that theabsorption layer 106 further includes an n-well region 156. In addition,the absorption layer 106 may be a p-doped region. In someimplementations, the doping level of the n-well region 156 may rangefrom 10¹⁵ cm⁻³ to 10¹⁷ cm⁻³. The doping level of the absorption layer106 may range from 10¹⁴ cm⁻³ to 10¹⁶ cm⁻³.

The arrangement of the p-doped region 128, the n-well region 156, andthe p-doped region 138 forms a PNP junction structure. In general, thePNP junction structure reduces a leakage current from the first controlsignal 122 to the second control signal 132, or alternatively from thesecond control signal 132 to the first control signal 122. Thearrangement of the n-doped region 126, the p-doped absorption layer 106,and the n-doped region 136 forms an NPN junction structure. In general,the NPN junction structure reduces a charge coupling from the firstreadout circuit 124 to the second readout circuit 134, or alternativelyfrom the second readout circuit 134 to the first readout circuit 124. Insome implementations, if the depth of the n-well region 156 is deep, thearrangement of the n-doped region 126, the p-doped absorption layer 106,the n-well region 156, the p-doped absorption layer 106, and the n-dopedregion 136 forms an NPNPN junction structure, which further reduces acharge coupling from the first readout circuit 124 to the second readoutcircuit 134, or alternatively from the second readout circuit 134 to thefirst readout circuit 124.

In some implementations, the p-doped regions 128 and 138 are formedentirely within the n-well region 156. In some other implementations,the p-doped regions 128 and 138 are partially formed in the n-wellregion 156. For example, a portion of the p-doped region 128 may beformed by implanting the p-dopants in the n-well region 156, whileanother portion of the p-doped region 128 may be formed by implantingthe p-dopants in the absorption layer 106. In some implementations, thedepth of the n-well region 156 is shallower than the p-doped regions 128and 138.

FIG. 1D is an example switched photodetector 180 for converting anoptical signal to an electrical signal. The switched photodetector 180is similar to the switched photodetector 100 in FIG. 1A, but that theswitched photodetector 150 further includes a p-well region 104 andn-well regions 142 and 144. In some implementations, the doping level ofthe n-well regions 142 and 144 may range from 10¹⁶ cm⁻³ to 10²⁰ cm⁻³.The doping level of the p-well region 104 may range from 10¹⁶ cm⁻³ to10²⁰ cm⁻³.

In some implementation, the absorption layer 106 may not completelyabsorb the incoming photons in the optical signal 112. For example, ifthe GeSi mesa does not completely absorb the incoming photons in the NIRoptical signal 112, the NIR optical signal 112 may penetrate into thesilicon substrate 102, where the silicon substrate 102 may absorb thepenetrated photons and generate photo-carriers deeply in the substratethat are slow to recombine. These slow photo-carriers negatively affectthe operation speed of the switched photodetector. Moreover, thephoto-carries generated in the silicon substrate 102 may be collected bythe neighboring pixels, which may cause unwanted signal cross-talksbetween the pixels. Furthermore, the photo-carriers generated in thesilicon substrate 102 may cause charging of the substrate 102, which maycause reliability issues in the switched photodiode.

To further remove the slow photo-carriers, the switched photodetector150 may include connections that short the n-well regions 142 and 144with the p-well region 104. For example, the connections may be formedby a silicide process or a deposited metal pad that connects the n-wellregions 142 and 144 with the p-well region 104. The shorting between then-well regions 142 and 144 and the p-well region 104 allows thephoto-carriers generated in the substrate 102 to be recombined at theshorted node, and therefore improves the operation speed and/orreliability of the switched photodetector. In some implementation, thep-well region 104 is used to passivate and/or minimize the electricfield around the interfacial defects between the absorptive layer 106and the substrate 102 in order to reduce the device dark current.

Although not shown in FIGS. 1A-1D, in some implementations, an opticalsignal may reach to the switched photodetector from the backside of thesubstrate 102. One or more optical components (e.g., microlens orlightguide) may be fabricated on the backside of the substrate 102 tofocus, collimate, defocus, filter, or otherwise manipulate the opticalsignal.

Although not shown in FIGS. 1A-1D, in some other implementations, thefirst switch 108 and the second switch 110 may alternatively befabricated to collect holes instead of electrons. In this case, thep-doped region 128 and the p-doped region 138 would be replaced byn-doped regions, and the n-doped region 126 and the n-doped region 136would be replaced by p-doped regions. The n-well regions 142, 144, 152,154, and 156 would be replaced by p-well regions. The p-well region 104would be replaced by an n-well region.

Although not shown in FIGS. 1A-1D, in some implementations, theabsorption layer 106 may be bonded to a substrate after the fabricationof the switched photodetector 100, 160, 170, and 180. The substrate maybe any material that allows the transmission of the optical signal 112to reach to the switched photodetector. For example, the substrate maybe polymer or glass. In some implementations, one or more opticalcomponents (e.g., microlens or lightguide) may be fabricated on thecarrier substrate to focus, collimate, defocus, filter, or otherwisemanipulate the optical signal 112.

Although not shown in FIGS. 1A-1D, in some implementations, the switchedphotodetector 100, 160, 170, and 180 may be bonded (ex: metal to metalbonding, oxide to oxide bonding, hybrid bonding) to a second substratewith circuits including control signals, and/or, readout circuits,and/or phase lock loop (PLL), and/or analog to digital converter (ADC).A metal layer may be deposited on top of the switched photodetector thatmay be used as a reflector to reflect the optical signal incident fromthe backside of the substrate 102. Adding such a mirror like metal layermay increase the absorption efficiency (quantum efficiency) of theabsorption layer 106. For example, the absorption efficiency ofphotodetectors operating at a longer NIR wavelength between 1.0 μm and1.6 μm may be significantly improved by addition of a reflecting metallayer. An oxide layer may be included between the metal layer and theabsorptive layer to increase the reflectivity. The metal layer may alsobe used as the bonding layer for the wafer-bonding process. In someimplementations, one or more switches similar to 108 and 110 can beadded for interfacing control signals/readout circuits.

Although not shown in FIG. 1A-1D, in some implementations, theabsorption layer 106 may be partially or fully embedded/recessed in thesubstrate 102 to relieve the surface topography and so ease thefabrication process. An example of the embedment technique is describedin U.S. Patent Publication No. US20170040362 A1 titled“Germanium-Silicon Light Sensing Apparatus,” which is fully incorporatedby reference herein.

FIG. 2A is an example switched photodetector 200 for converting anoptical signal to an electrical signal, where the first switch 208 andthe second switch 210 are fabricated on a substrate 202. The switchedphotodetector 200 includes an absorption layer 206 fabricated on asubstrate 202. The substrate 202 may be any suitable substrate wheresemiconductor devices can be fabricated on. For example, the substrate202 may be a silicon substrate.

In general, the absorption layer 206 receives an optical signal 212 andconverts the optical signal 212 into electrical signals. The absorptionlayer 206 is similar to the absorption layer 106. The absorption layer206 may be intrinsic, p-type, or n-type. In some implementations, theabsorption layer 206 may be formed from a p-type GeSi material. In someimplementations, the absorption layer 206 may include a p-doped region209. The p-doped region 209 may repel the photo-electrons from theabsorption layer 206 to the substrate 202 and thereby increase theoperation speed. For example, the p-doped region 209 may have a p+doping, where the dopant concentration is as high as a fabricationprocess may achieve, e.g., the peak concentration may be about 5×1020cm-3 when the absorption layer 206 is germanium and doped with boron. Insome implementation, the doping concentration of the p-doped region 209may be lower than 5×1020 cm-3 to ease the fabrication complexity at theexpense of an increased contact resistance. In some implementations, thep-doped region 209 may be a graded p-doped region.

A first switch 208 and a second switch 210 have been fabricated in thesubstrate 202. The first switch 208 is coupled to a first control signal222 and a first readout circuit 224. The second switch 210 is coupled toa second control signal 232 and a second readout circuit 234. Ingeneral, the first control signal 222 and the second control signal 232control whether the electrons or the holes generated by the absorbedphotons are collected by the first readout circuit 224 or the secondreadout circuit 234. The first control signal 222 is similar to thefirst control signal 122. The second control signal 232 is similar tothe second control signal 132. The first readout circuit 224 is similarto the first readout circuit 124. The second readout circuit 234 issimilar to the second readout circuit 134.

In some implementations, the first switch 208 and the second switch 210may be fabricated to collect electrons generated by the absorption layer206. In this case, the first switch 208 includes a p-doped region 228and an n-doped region 226. For example, the p-doped region 228 may havea p+ doping, where the activated dopant concentration may be as high asa fabrication process may achieve, e.g., the peak concentration may beabout 2×1020 cm-3 when the substrate 202 is silicon and doped withboron. In some implementation, the doping concentration of the p-dopedregion 228 may be lower than 2×1020 cm-3 to ease the fabricationcomplexity at the expense of an increased contact resistance. Then-doped region 226 may have an n+ doping, where the activated dopantconcentration may be as high as a fabrication process may achieve, e.g.,the peak concentration may be about 5×1020 cm-3 when the substrate 202is silicon and doped with phosphorous. In some implementation, thedoping concentration of the n-doped region 226 may be lower than 5×1020cm-3 to ease the fabrication complexity at the expense of an increasedcontact resistance. The distance between the p-doped region 228 and then-doped region 226 may be designed based on fabrication process designrules. In general, the closer the distance between the p-doped region228 and the n-doped region 226, the higher the switching efficiency ofthe generated photo-carriers. The second switch 210 includes a p-dopedregion 238 and an n-doped region 236. The p-doped region 238 is similarto the p-doped region 228, and the n-doped region 236 is similar to then-doped region 226.

In some implementations, the p-doped region 228 is coupled to the firstcontrol signal 222. The n-doped region 226 is coupled to the readoutcircuit 224. The p-doped region 238 is coupled to the second controlsignal 232. The n-doped region 236 is coupled to the readout circuit234. The first control signal 222 and the second control signal 232 areused to control the collection of electrons generated by the absorbedphotons. For example, when the absorption layer 206 absorbs photons inthe optical signal 212, electron-hole pairs are generated and drift ordiffuse into the substrate 202. When voltages are used, if the firstcontrol signal 222 is biased against the second control signal 232, anelectric field is created between the p-doped region 228 and the p-dopedregion 238, and free electrons from the absorption layer 206 drifttowards the p-doped region 228 or the p-doped region 238 depending onthe direction of the electric field. In some implementations, the firstcontrol signal 222 may be fixed at a voltage value Vi, and the secondcontrol signal 232 may alternate between voltage values Vi±ΔV. Thedirection of the bias value determines the drift direction of theelectrons. Accordingly, when one switch (e.g., the first switch 208) isswitched “on” (i.e., the electrons drift towards the p-doped region228), the other switch (e.g., the second switch 210) is switched “off”(i.e., the electrons are blocked from the p-doped region 238). In someimplementations, the first control signal 222 and the second controlsignal 232 may be voltages that are differential to each other.

In the first switch 208, an electric field is created between thep-doped region 228 and the n-doped region 226. Similarly, in the secondswitch 210, an electric field is created between the p-doped region 238and the n-doped region 236. When the first switch 208 is switched “on”and the second switch 210 is switched “off”, the electrons drift towardthe p-doped region 228, and the electric field between the p-dopedregion 228 and the n-doped region 226 further carries the electrons tothe n-doped region 226. The readout circuit 224 may then be enabled toprocess the charges collected by the n-doped region 226. On the otherhand, when the second switch 210 is switched “on” and the first switch208 is switched “off”, the electrons drift toward the p-doped region238, and the electric field between the p-doped region 238 and then-doped region 236 further carries the electrons to the n-doped region236. The readout circuit 234 may then be enabled to process the chargescollected by the n-doped region 236.

In some implementations, a voltage may be applied between the p-dopedand the n-doped regions of a switch to operate the switch in anavalanche regime to increase the sensitivity of the switchedphotodetector 200. For example, in the case of a substrate 202 includingGeSi, when the distance between the p-doped region 228 and the n-dopedregion 226 is about 100 nm, it is possible to apply a voltage that isless than 7 V to create an avalanche gain between the p-doped region 228and the n-doped region 226.

In some implementations, the p-doped region 209 may be coupled to anexternal control 214. For example, the p-doped region 209 may be coupledto ground. In some implementations, the p-doped region 209 may befloated and not coupled to any external control. In someimplementations, the substrate 202 may be coupled to an external control216. For example, the substrate 202 may be coupled to an electricalground, or a preset voltage less than the voltages at the n-dopedregions 226 and 236. In some other implementations, the substrate 202may be floated and not coupled to any external control.

FIG. 2B is an example switched photodetector 250 for converting anoptical signal to an electrical signal. The switched photodetector 250is similar to the switched photodetector 200 in FIG. 2A, but that thefirst switch 208 and the second switch 210 further includes an n-wellregion 252 and an n-well region 254, respectively. In addition, theabsorption layer 206 may be a p-doped region and the substrate 202 maybe a p-doped substrate. In some implementations, the doping level of then-well regions 252 and 254 may range from 1015 cm-3 to 1017 cm-3. Thedoping level of the absorption layer 206 and the substrate 202 may rangefrom 1014 cm-3 to 1016 cm-3.

The arrangement of the p-doped region 228, the n-well region 252, thep-doped substrate 202, the n-well region 254, and the p-doped region 238forms a PNPNP junction structure. In general, the PNPNP junctionstructure reduces a leakage current from the first control signal 222 tothe second control signal 232, or alternatively from the second controlsignal 232 to the first control signal 222. The arrangement of then-doped region 226, the p-doped substrate 202, and the n-doped region236 forms an NPN junction structure. In general, the NPN junctionstructure reduces a charge coupling from the first readout circuit 224to the second readout circuit 234, or alternatively from the secondreadout circuit 234 to the first readout circuit 224.

In some implementations, the p-doped region 228 is formed entirelywithin the n-well region 252. In some other implementations, the p-dopedregion 228 is partially formed in the n-well region 252. For example, aportion of the p-doped region 228 may be formed by implanting thep-dopants in the n-well region 252, while another portion of the p-dopedregion 228 may be formed by implanting the p-dopants in the substrate202. Similarly, in some implementations, the p-doped region 238 isformed entirely within the n-well region 254. In some otherimplementations, the p-doped region 238 is partially formed in then-well region 254. In some implementations, the depth of the n-wellregions 252 and 254 is shallower than the p-doped regions 228 and 238.

FIG. 2C is an example switched photodetector 260 for converting anoptical signal to an electrical signal. The switched photodetector 260is similar to the switched photodetector 200 in FIG. 2A, but that thesubstrate 202 further includes an n-well region 244. In addition, theabsorption layer 206 may be a p-doped region and the substrate 202 maybe a p-doped substrate. In some implementations, the doping level of then-well region 244 may range from 1015 cm-3 to 1017 cm-3. The dopinglevel of the absorption layer 206 and the substrate 202 may range from1014 cm-3 to 1016 cm-3.

The arrangement of the p-doped region 228, the n-well region 244, andthe p-doped region 238 forms a PNP junction structure. In general, thePNP junction structure reduces a leakage current from the first controlsignal 222 to the second control signal 232, or alternatively from thesecond control signal 232 to the first control signal 222. Thearrangement of the n-doped region 226, the p-doped substrate 202, andthe n-doped region 236 forms an NPN junction structure. In general, theNPN junction structure reduces a charge coupling from the first readoutcircuit 224 to the second readout circuit 234, or alternatively from thesecond readout circuit 234 to the first readout circuit 224. In someimplementations, if the depth of the n-well 244 is deep, the arrangementof the n-doped region 226, the p-doped substrate 202, the n-well region244, the p-doped substrate 202, and the n-doped region 236 forms anNPNPN junction structure, which further reduces a charge coupling fromthe first readout circuit 224 to the second readout circuit 234, oralternatively from the second readout circuit 234 to the first readoutcircuit 224. In some implementations, the n-well region 244 alsoeffectively reduces the potential energy barrier perceived by theelectrons flowing from the absorption layer 206 to the substrate 202.

In some implementations, the p-doped regions 228 and 238 are formedentirely within the n-well region 244. In some other implementations,the p-doped regions 228 and 238 are partially formed in the n-wellregion 244. For example, a portion of the p-doped region 228 may beformed by implanting the p-dopants in the n-well region 244, whileanother portion of the p-doped region 228 may be formed by implantingthe p-dopants in the substrate 202. In some implementations, the depthof the n-well region 244 is shallower than the p-doped regions 228 and238.

FIG. 2D is an example switched photodetector 270 for converting anoptical signal to an electrical signal. The switched photodetector 270is similar to the switched photodetector 200 in FIG. 2A, but that theswitched photodetector 270 further includes one or more p-well regions246 and one or more p-well regions 248. In some implementations, the oneor more p-well regions 246 and the one or more p-well regions 248 may bepart of a ring structure that surrounds the first switch 208 and thesecond switch 210. In some implementations, the doping level of the oneor more p-well regions 246 and 248 may range from 1015 cm-3 to 1020cm-3. The one or more p-well regions 246 and 248 may be used as anisolation of photo-electrons from the neighboring pixels.

Although not shown in FIG. 2A-2D, in some implementations, an opticalsignal may reach to the switched photodetector from the backside of thesubstrate 202. One or more optical components (e.g., microlens orlightguide) may be fabricated on the backside of the substrate 202 tofocus, collimate, defocus, filter, or otherwise manipulate the opticalsignal.

Although not shown in FIG. 2A-2D, in some other implementations, thefirst switch 208 and the second switch 210 may alternatively befabricated to collect holes instead of electrons. In this case, thep-doped region 228, the p-doped region 238, and the p-doped region 209would be replaced by n-doped regions, and the n-doped region 226 and then-doped region 236 would be replaced by p-doped regions. The n-wellregions 252, 254, and 244 would be replaced by p-well regions. Thep-well regions 246 and 248 would be replaced by n-well regions.

Although not shown in FIG. 2A-2D, in some implementations, theabsorption layer 206 may be bonded to a substrate after the fabricationof the switched photodetector 200, 250, 260, and 270. The carriersubstrate may be any material that allows the transmission of theoptical signal 212 to reach to the switched photodetector. For example,the substrate may be polymer or glass. In some implementations, one ormore optical components (e.g., microlens or lightguide) may befabricated on the carrier substrate to focus, collimate, defocus,filter, or otherwise manipulate the optical signal 212.

Although not shown in FIGS. 2A-2D, in some implementations, the switchedphotodetector 200, 250, 260, and 270 may be bonded (e.g., metal to metalbonding, oxide to oxide bonding, hybrid bonding) to a second substratewith circuits including control signals, and/or, readout circuits,and/or phase lock loop (PLL), and/or analog to digital converter (ADC).A metal layer may be deposited on top of the switched photodetector thatmay be used as a reflector to reflect the optical signal incident fromthe backside of the substrate 202. Adding such a mirror like metal layermay increase the absorption efficiency (quantum efficiency) of theabsorption layer 206. For example, the absorption efficiency ofphotodetectors operating at a longer NIR wavelength between 1.0 μm and1.6 μm may be significantly improved by addition of a reflecting metallayer. An oxide layer may be included between the metal layer and theabsorptive layer to increase the reflectivity. The metal layer may alsobe used as the bonding layer for the wafer-bonding process. In someimplementations, one or more switches similar to 208 and 210 can beadded for interfacing control signals/readout circuits.

Although not shown in FIG. 2A-2D, in some implementations, theabsorption layer 206 may be partially or fully embedded/recessed in thesubstrate 202 to relieve the surface topography and so ease thefabrication process. An example of the embedment technique is describedin U.S. Patent Publication No. US20170040362 A1.

FIG. 3A is an example switched photodetector 300 for converting anoptical signal to an electrical signal, where first switches 308 a and308 b, and second switch 310 a and 310 b are fabricated in a verticalarrangement on a substrate 302. One characteristic with the switchedphotodetector 100 or the switched photodetector 200 is that the largerthe optical window size d, the longer the photo-electron transit timerequired for an electron drifts or diffuses from one switch to the otherswitch. The operation speed of the photodetector may therefore beaffected. The switched photodetector 300 may further improve theoperation speed by arranging the p-doped regions and the n-doped regionsof the switches in a vertical arrangement. Using this verticalarrangement, the photo-electron transit distance is limited mostly bythe thickness t (e.g., ˜1 μm) of the absorption layer instead of thewindow sized (e.g., ˜10 μm) of the absorption layer. The switchedphotodetector 300 includes an absorption layer 306 fabricated on asubstrate 302. The substrate 302 may be any suitable substrate wheresemiconductor devices can be fabricated on. For example, the substrate302 may be a silicon substrate.

In general, the absorption layer 306 receives an optical signal 312 andconverts the optical signal 312 into electrical signals. The absorptionlayer 306 is similar to the absorption layer 206. The absorption layer306 may be intrinsic, p-type, or n-type. In some implementations, theabsorption layer 306 may be formed from a p-type GeSi material. In someimplementations, the absorption layer 306 may include a p-doped region309. The p-doped region 309 is similar to the p-doped region 209.

First switches 308 a and 308 b, and second switches 310 a and 310 b havebeen fabricated in the substrate 302. Notably, although FIG. 3A onlyshows two first switches 308 a and 308 b and two second switches 310 aand 310 b, the number of first switches and second switches may be moreor less. The first switches 308 a and 308 b are coupled to a firstcontrol signal 322 and a first readout circuit 324. The second switches310 a and 310 b are coupled to a second control signal 332 and a secondreadout circuit 334.

In general, the first control signal 322 and the second control signal332 control whether the electrons or the holes generated by the absorbedphotons are collected by the first readout circuit 324 or the secondreadout circuit 334. The first control signal 322 is similar to thefirst control signal 122. The second control signal 332 is similar tothe second control signal 132. The first readout circuit 324 is similarto the first readout circuit 124. The second readout circuit 334 issimilar to the second readout circuit 134. In some implementations, thefirst switches 308 a and 308 b, and the second switches 310 a and 310 bmay be fabricated to collect electrons generated by the absorption layer306. In this case, the first switches 308 a and 308 b include p-dopedregions 328 a and 328 b, and n-doped regions 326 a and 326 b,respectively. For example, the p-doped regions 328 a and 328 b may havea p+ doping, where the activated dopant concentration may be as high asa fabrication process may achieve, e.g., the peak concentration may beabout 2×1020 cm-3 when the substrate 302 is silicon and doped withboron. In some implementation, the doping concentration of the p-dopedregions 328 a and 328 b may be lower than 2×1020 cm-3 to ease thefabrication complexity at the expense of an increased contactresistance. The n-doped regions 326 a and 326 b may have an n+ doping,where the activated dopant concentration may be as high as a fabricationprocess may achieve, e.g., the peak concentration may be about 5×1020cm-3 when the substrate 302 is silicon and doped with phosphorous. Insome implementation, the doping concentration of the n-doped regions 326a and 326 b may be lower than 5×1020 cm-3 to ease the fabricationcomplexity at the expense of an increased contact resistance. Thedistance between the p-doped region 328 a and the n-doped region 326 amay be designed based on fabrication process design rules. For example,the distance between the p-doped region 328 a and the n-doped region 326a may be controlled by the energies associated with the dopant implants.In general, the closer the distance between the p-doped regions 328a/328 b and the n-doped regions 326 a/326 b, the higher the switchingefficiency of the generated photo-carriers. The second switches 310 aand 310 b includes p-doped regions 338 a and 338 b, and n-doped regions336 a and 336 b, respectively. The p-doped regions 338 a/338 b aresimilar to the p-doped regions 328 a/328 b, and the n-doped regions 336a/336 b are similar to the n-doped region 326 a/326 b.

In some implementations, the p-doped regions 328 a and 328 b are coupledto the first control signal 322. The n-doped regions 326 a and 326 b arecoupled to the readout circuit 324. The p-doped regions 338 a and 338 bare coupled to the second control signal 332. The n-doped regions 336 aand 336 b are coupled to the readout circuit 334. The first controlsignal 322 and the second control signal 332 are used to control thecollection of electrons generated by the absorbed photons. For example,when the absorption layer 306 absorbs photons in the optical signal 312,electron-hole pairs are generated and drift or diffuse into thesubstrate 302. When voltages are used, if the first control signal 322is biased against the second control signal 332, electric fields arecreated between the p-doped region 309 and the p-doped regions 328 a/328b or the p-doped regions 338 a/338 b, and free electrons from theabsorption layer 306 drift towards the p-doped regions 328 a/328 b orthe p-doped regions 338 a/338 b depending on the directions of theelectric fields. In some implementations, the first control signal 322may be fixed at a voltage value Vi, and the second control signal 332may alternate between voltage values Vi±ΔV. The direction of the biasvalue determines the drift direction of the electrons. Accordingly, whenone group of switches (e.g., first switches 308 a and 308 b) areswitched “on” (i.e., the electrons drift towards the p-doped regions 328a and 328 b), the other group of switches (e.g., the second switches 310a and 310 b) are switched “off” (i.e., the electrons are blocked fromthe p-doped regions 338 a and 338 b). In some implementations, the firstcontrol signal 322 and the second control signal 332 may be voltagesthat are differential to each other.

In each of the first switches 308 a/308 b, an electric field is createdbetween the p-doped region 328 a/328 b and the n-doped region 326 a/326b. Similarly, in each of the second switches 310 a/310 b, an electricfield is created between the p-doped region 338 a/338 b and the n-dopedregion 336 a/336 b. When the first switches 308 a and 308 b are switched“on” and the second switches 310 a and 310 b are switched “off”, theelectrons drift toward the p-doped regions 328 a and 328 b, and theelectric field between the p-doped region 328 a and the n-doped region326 a further carries the electrons to the n-doped region 326 a.Similarly, the electric field between the p-doped region 328 b and then-doped region 326 b further carries the electrons to the n-doped region326 b. The readout circuit 324 may then be enabled to process thecharges collected by the n-doped regions 326 a and 326 b. On the otherhand, when the second switches 310 a and 310 b are switched “on” and thefirst switches 308 a and 308 b are switched “off”, the electrons drifttoward the p-doped regions 338 a and 338 b, and the electric fieldbetween the p-doped region 338 a and the n-doped region 336 a furthercarries the electrons to the n-doped region 336 a. Similarly, theelectric field between the p-doped region 338 b and the n-doped region336 b further carries the electrons to the n-doped region 336 b. Thereadout circuit 334 may then be enabled to process the amount of chargescollected by the n-doped regions 336 a and 336 b.

In some implementations, a voltage may be applied between the p-dopedand the n-doped regions of a switch to operate the switch in anavalanche regime to increase the sensitivity of the switchedphotodetector 300. For example, in the case of a substrate 302 includingGeSi, when the distance between the p-doped region 328 a and the n-dopedregion 326 a is about 100 nm, it is possible to apply a voltage that isless than 7 V to create an avalanche gain between the p-doped region 328a and the n-doped region 326 a.

In some implementations, the p-doped region 309 may be coupled to anexternal control 314. For example, the p-doped region 309 may be coupledto ground. In some implementations, the p-doped region 309 may befloated and not coupled to any external control. In someimplementations, the substrate 302 may be coupled to an external control316. For example, the substrate 302 may be coupled to an electricground, or a preset voltage less than the voltages at the n-dopedregions 326 and 336. In some other implementations, the substrate 302may be floated and not coupled to any external control.

FIG. 3B is an example switched photodetector 360 for converting anoptical signal to an electrical signal. The switched photodetector 360is similar to the switched photodetector 300 in FIG. 3A, but that theswitched photodetector 360 further includes an n-well region 344. Inaddition, the absorption layer 360 may be a p-doped region and thesubstrate 302 may be a p-doped substrate. In some implementations, thedoping level of the n-well region 344 may range from 1015 cm-3 to 1017cm-3. The doping level of the absorption layer 360 and the substrate 302may range from 1014 cm-3 to 1016 cm-3.

The arrangement of the p-doped region 328 a, the n-well region 344, andthe p-doped region 338 a forms a PNP junction structure. Similarly, thearrangement of the p-doped region 328 b, the n-well region 344, and thep-doped region 338 b forms another PNP junction structure. In general,the PNP junction structure reduces a leakage current from the firstcontrol signal 322 to the second control signal 332, or alternativelyfrom the second control signal 332 to the first control signal 322. Thearrangement of the n-doped region 326 a, the p-doped substrate 302, andthe n-doped region 336 a forms an NPN junction structure. Similarly, thearrangement of the n-doped region 326 b, the p-doped substrate 302, andthe n-doped region 336 b forms an NPN junction structure. In general,the NPN junction structure reduces a charge coupling from the firstreadout circuit 324 to the second readout circuit 334, or alternativelyfrom the second readout circuit 334 to the first readout circuit 324. Insome implementations, the n-well region 344 also effectively reduces thepotential energy barrier perceived by the electrons flowing from theabsorption layer 306 to the substrate 302.

In some implementations, the p-doped regions 328 a, 338 a, 328 b, and338 b are formed entirely within the n-well region 344. In some otherimplementations, the p-doped regions 328 a, 338 a, 328 b, and 338 b arepartially formed in the n-well region 344. For example, a portion of thep-doped region 328 a may be formed by implanting the p-dopants in then-well region 344, while another portion of the p-doped region 328 a maybe formed by implanting the p-dopants in the substrate 302. In someimplementations, the depth of the n-well region 344 is shallower thanthe p-doped regions 328 a, 338 a,

FIG. 3C is an example switched photodetector 370 for converting anoptical signal to an electrical signal. The switched photodetector 370is similar to the switched photodetector 300 in FIG. 3A, but that theswitched photodetector 370 further includes one or more p-well regions346 and one or more p-well regions 348. In some implementations, the oneor more p well regions 346 and the one or more p-well regions 348 may bepart of a ring structure that surrounds the first switches 308 a and 308b, and the second switches 310 a and 310 b. In some implementations, thedoping level of the one or more p-well regions may range from 1015 cm-3to 1020 cm-3. The one or more p-well regions 346 and 348 may be used asan isolation of photo-electrons from the neighboring pixels.

FIG. 3D shows cross-sectional views of the example switchedphotodetector 380. FIG. 3D shows that the p-doped regions 328 a and 328b of the first switches 308 a and 308 b, and the p-doped regions 338 aand 338 b of the second switches 310 a and 310 b may be arranged on afirst plane 362 of the substrate 302 in an interdigitated arrangement.FIG. 3D further shows that the n-doped regions 326 a and 326 b of thefirst switches 308 a and 308 b, and the n-doped regions 336 a and 336 bof the second switches 310 a and 310 b may be arranged on a second plane364 of the substrate 302 in an interdigitated arrangement.

Although not shown in FIG. 3A-3D, in some implementations, an opticalsignal may reach to the switched photodetector from the backside of thesubstrate 302. One or more optical components (e.g., microlens orlightguide) may be fabricated on the backside of the substrate 302 tofocus, collimate, defocus, filter, or otherwise manipulate the opticalsignal.

Although not shown in FIG. 3A-3D, in some other implementations, thefirst switches 308 a and 308 b, and the second switches 310 a and 310 bmay alternatively be fabricated to collect holes instead of electrons.In this case, the p-doped regions 328 a and 328 b, the p-doped regions338 a and 338 b, and the p-doped region 309 would be replaced by n-dopedregions, and the n-doped regions 326 a and 326 b, and the n-dopedregions 336 a and 336 b would be replaced by p-doped regions. The n-wellregion 344 would be replaced by a p-well region. The p-well regions 346and 348 would be replaced by n-well regions.

Although not shown in FIG. 3A-3D, in some implementations, theabsorption layer 306 may be bonded to a substrate after the fabricationof the switched photodetector 300, 360, 370, and 380. The substrate maybe any material that allows the transmission of the optical signal 312to reach to the switched photodetector. For example, the substrate maybe polymer or glass. In some implementations, one or more opticalcomponents (e.g., microlens or lightguide) may be fabricated on thecarrier substrate to focus, collimate, defocus, filter, or otherwisemanipulate the optical signal 312.

Although not shown in FIGS. 3A-3D, in some implementations, the switchedphotodetector 300, 360, 370, and 380 may be bonded (ex: metal to metalbonding, oxide to oxide bonding, hybrid bonding) to a second substratewith circuits including control signals, and/or, readout circuits,and/or phase lock loop (PLL), and/or analog to digital converter (ADC).A metal layer may be deposited on top of the switched photodetector thatmay be used as a reflector to reflect the optical signal incident fromthe backside of the substrate 302. Adding such a mirror like metal layermay increase the absorption efficiency (quantum efficiency) of theabsorption layer 306. For example, the absorption efficiency ofphotodetectors operating at a longer NIR wavelength between 1.0 μm and1.6 μm may be significantly improved by addition of a reflecting metallayer. An oxide layer may be included between the metal layer and theabsorptive layer to increase the reflectivity. The metal layer may alsobe used as the bonding layer for the wafer-bonding process. In someimplementations, one or more switches similar to 308 a (or 308 b) and310 a (or 310 b) can be added for interfacing control signals/readoutcircuits.

Although not shown in FIG. 3A-3D, in some implementations, theabsorption layer 306 may be partially or fully embedded/recessed in thesubstrate 302 to relieve the surface topography and so ease thefabrication process. An example of the embedment technique is describedin U.S. Patent Publication No. US20170040362 A1.

FIG. 4A is an example switched photodetector 400 for converting anoptical signal to an electrical signal. The switched photodetector 400includes an absorption layer 406 fabricated on a substrate 402. Thesubstrate 402 may be any suitable substrate where semiconductor devicescan be fabricated on. For example, the substrate 402 may be a siliconsubstrate. The absorption layer 406 includes a first switch 408 and asecond switch 410.

In general, the absorption layer 406 receives an optical signal 412 andconverts the optical signal 412 into electrical signals. The absorptionlayer 406 may be intrinsic, p-type, or n-type. In some implementations,the absorption layer 406 may be formed from a p-type GeSi material. Theabsorption layer 406 is selected to have a high absorption coefficientat the desired wavelength range. For NIR wavelengths, the absorptionlayer 406 may be a GeSi mesa, where the GeSi absorbs photons in theoptical signal 412 and generates electron-hole pairs. The materialcomposition of germanium and silicon in the GeSi mesa may be selectedfor specific processes or applications. In some implementations, theabsorption layer 406 is designed to have a thickness t. For example, for850 nm or 940 nm wavelength, the thickness of the GeSi mesa may beapproximately 1 μm to have a substantial quantum efficiency. In someimplementations, the surface of the absorption layer 406 is designed tohave a specific shape. For example, the GeSi mesa may be circular,square, or rectangular depending on the spatial profile of the opticalsignal 412 on the surface of the GeSi mesa. In some implementations, theabsorption layer 406 is designed to have a lateral dimension d forreceiving the optical signal 412. For example, the GeSi mesa may have acircular or a rectangular shape, where d can range from 1 μm to 50 μm.

A first switch 408 and a second switch 410 have been fabricated in theabsorption layer 406 and the substrate 402. The first switch 408 iscoupled to a first control signal 422 and a first readout circuit 424.The second switch 410 is coupled to a second control signal 432 and asecond readout circuit 434. In general, the first control signal 422 andthe second control signal 432 control whether the electrons or the holesgenerated by the absorbed photons are collected by the first readoutcircuit 424 or the second readout circuit 434.

In some implementations, the first switch 408 and the second switch 410may be fabricated to collect electrons. In this case, the first switch408 includes a p-doped region 428 implanted in the absorption layer 406and an n-doped region 426 implanted in the substrate 402. For example,the p-doped region 428 may have a p+ doping, where the activated dopantconcentration may be as high as a fabrication process may achieve, e.g.,the peak concentration may be about 5×1020 cm-3 when the absorptionlayer 106 is germanium and doped with boron. In some implementation, thedoping concentration of the p-doped region 428 may be lower than 5×1020cm-3 to ease the fabrication complexity at the expense of an increasedcontact resistance. The n-doped region 426 may have an n+ doping, wherethe activated dopant concentration may be as high as a fabricationprocess may achieve, e.g., e.g., the peak concentration may be about5×1020 cm-3 when the substrate 402 is silicon and doped withphosphorous. In some implementation, the doping concentration of then-doped region 426 may be lower than 5×1020 cm-3 to ease the fabricationcomplexity at the expense of an increased contact resistance. Thedistance between the p-doped region 428 and the n-doped region 426 maybe designed based on fabrication process design rules. In general, thecloser the distance between the p-doped region 428 and the n-dopedregion 426, the higher the switching efficiency of the generatedphoto-carriers. The second switch 410 includes a p-doped region 438 andan n-doped region 436. The p-doped region 438 is similar to the p-dopedregion 428, and the n-doped region 436 is similar to the n-doped region426.

In some implementations, the p-doped region 428 is coupled to the firstcontrol signal 422. For example, the p-doped region 428 may be coupledto a voltage source, where the first control signal 422 may be an ACvoltage signal from the voltage source. In some implementations, then-doped region 426 is coupled to the readout circuit 424. The readoutcircuit 424 may be in a three-transistor configuration consisting of areset gate, a source-follower, and a selection gate, a circuit includingfour or more transistors, or any suitable circuitry for processingcharges. In some implementations, the readout circuit 424 may befabricated on the substrate 402. In some other implementations, thereadout circuit 424 may be fabricated on another substrate andintegrated/co-packaged with the switched photodetector 400 via die/waferbonding or stacking.

The p-doped region 438 is coupled to the second control signal 432. Forexample, the p-doped region 438 may be coupled to a voltage source,where the second control signal 432 may be an AC voltage signal havingan opposite phase from the first control signal 422. In someimplementations, the n-doped region 436 is coupled to the readoutcircuit 434. The readout circuit 434 may be similar to the readoutcircuit 424.

The first control signal 422 and the second control signal 432 are usedto control the collection of electrons generated by the absorbedphotons. For example, when voltages are used, if the first controlsignal 422 is biased against the second control signal 432, an electricfield is created between the p-doped region 428 and the p-doped region438, and free electrons drift towards the p-doped region 428 or thep-doped region 438 depending on the direction of the electric field. Insome implementations, the first control signal 422 may be fixed at avoltage value Vi, and the second control signal 432 may alternatebetween voltage values Vi±ΔV. The direction of the bias value determinesthe drift direction of the electrons. Accordingly, when one switch(e.g., the first switch 408) is switched “on” (i.e., the electrons drifttowards the p-doped region 428), the other switch (e.g., the secondswitch 410) is switched “off” (i.e. the electrons are blocked from thep-doped region 438). In some implementations, the first control signal422 and the second control signal 432 may be voltages that aredifferential to each other.

In general, a difference (before equilibrium) between the Fermi level ofa p-doped region and the Fermi level of an n-doped region creates anelectric field between the two regions. In the first switch 408, anelectric field is created between the p-doped region 428 and the n-dopedregion 426. Similarly, in the second switch 410, an electric field iscreated between the p-doped region 438 and the n-doped region 436. Whenthe first switch 408 is switched “on” and the second switch 410 isswitched “off”, the electrons drift toward the p-doped region 428, andthe electric field between the p-doped region 428 and the n-doped region426 further carries the electrons to the n-doped region 426. The readoutcircuit 424 may then be enabled to process the charges collected by then-doped region 426. On the other hand, when the second switch 410 isswitched “on” and the first switch 408 is switched “off”, the electronsdrift toward the p-doped region 438, and the electric field between thep-doped region 438 and the n-doped region 436 further carries theelectrons to the n-doped region 436. The readout circuit 434 may then beenabled to process the charges collected by the n-doped region 436.

In some implementations, the substrate 402 may be coupled to an externalcontrol 416. For example, the substrate 402 may be coupled to anelectrical ground, or a preset voltage less than the voltages at then-doped regions 426 and 436. In some other implementations, thesubstrate 402 may be floated and not coupled to any external control.

FIG. 4B is an example switched photodetector 450 for converting anoptical signal to an electrical signal. The switched photodetector 450is similar to the switched photodetector 400 in FIG. 4A, but that thefirst switch 408 and the second switch 410 further includes an n-wellregion 452 and an n-well region 454, respectively. In addition, theabsorption layer 406 may be a p-doped layer and the substrate 402 may bea p-doped substrate. In some implementations, the doping level of then-well regions 452 and 454 may range from 1015 cm-3 to 1017 cm-3. Thedoping level of the absorption layer 406 and the substrate 402 may rangefrom 1014 cm-3 to 1016 cm-3.

The arrangement of the p-doped region 428, the n-well region 452, theabsorption layer 406, the n-well region 454, and the p-doped region 438forms a PNPNP junction structure. In general, the PNPNP junctionstructure reduces a leakage current from the first control signal 422 tothe second control signal 432, or alternatively from the second controlsignal 432 to the first control signal 422.

The arrangement of the n-doped region 426, the p-doped substrate 402,and the n-doped region 436 forms an NPN junction structure. In general,the NPN junction structure reduces a charge coupling from the firstreadout circuit 424 to the second readout circuit 434, or alternativelyfrom the second readout circuit 434 to the first readout circuit 424.

In some implementations, the p-doped region 428 is formed entirelywithin the n-well region 452. In some other implementations, the p-dopedregion 428 is partially formed in the n-well region 452. For example, aportion of the p-doped region 428 may be formed by implanting thep-dopants in the n-well region 452, while another portion of the p-dopedregion 428 may be formed by implanting the p-dopants in the absorptionlayer 406. Similarly, in some implementations, the p-doped region 438 isformed entirely within the n-well region 454. In some otherimplementations, the p-doped region 438 is partially formed in then-well region 454. In some implementations, the depth of the n-wellregions 452 and 454 is shallower than the p-doped regions 428 and 438.

FIG. 4C is an example switched photodetector 460 for converting anoptical signal to an electrical signal. The switched photodetector 460is similar to the switched photodetector 400 in FIG. 4A, but that theabsorption layer 406 further includes an n-well region 456. In addition,the absorption layer 406 may be a p-doped region and the substrate 402may be a p-doped substrate. In some implementations, the doping level ofthe n-well region 456 may range from 1015 cm-3 to 1017 cm-3. The dopinglevel of the absorption layer 406 and the substrate 402 may range from1014 cm-3 to 1016 cm-3.

The arrangement of the p-doped region 428, the n-well region 456, andthe p-doped region 438 forms a PNP junction structure. In general, thePNP junction structure reduces a leakage current from the first controlsignal 422 to the second control signal 432, or alternatively from thesecond control signal 432 to the first control signal 422.

The arrangement of the n-doped region 426, the p-doped absorption layer406, and the n-doped region 436 forms an NPN junction structure. Ingeneral, the NPN junction structure reduces a charge coupling from thefirst readout circuit 424 to the second readout circuit 434, oralternatively from the second readout circuit 434 to the first readoutcircuit 424.

In some implementations, the p-doped regions 428 and 438 are formedentirely within the n-well region 456. In some other implementations,the p-doped regions 428 and 438 are partially formed in the n-wellregion 456. For example, a portion of the p-doped region 428 may beformed by implanting the p-dopants in the n-well region 456, whileanother portion of the p-doped region 428 may be formed by implantingthe p-dopants in the absorption layer 406. In some implementations, thedepth of the n-well region 456 is shallower than the p-doped regions 428and 438.

FIG. 4D is an example switched photodetector 470 for converting anoptical signal to an electrical signal. The switched photodetector 470is similar to the switched photodetector 460 in FIG. 4C, but that then-well region 458 is formed to extend from the absorption layer 406 intothe substrate 202. In addition, the absorption layer 406 may be ap-doped region and the substrate 402 may be a p-doped substrate. In someimplementations, the doping level of the n-well region 456 may rangefrom 1015 cm-3 to 1017 cm-3. The doping level of the absorption layer406 and the substrate 402 may range from 1014 cm-3 to 1016 cm-3.

The arrangement of the p-doped region 428, the n-well region 458, andthe p-doped region 438 forms a PNP junction structure, which furtherreduces a leakage current from the first control signal 422 to thesecond control signal 432, or alternatively from the second controlsignal 432 to the first control signal 422. The arrangement of then-doped region 426, the p-doped substrate 402, the n-well region 458,the p-doped substrate 402, and the n-doped region 436 forms an NPNPNjunction structure, which further reduces a charge coupling from thefirst readout circuit 424 to the second readout circuit 434, oralternatively from the second readout circuit 434 to the first readoutcircuit 424. In some implementations, the n-well region 458 alsoeffectively reduces the potential energy barrier perceived by theelectrons flowing from the absorption layer 406 to the substrate 402.

FIG. 4E is an example switched photodetector 480 for converting anoptical signal to an electrical signal. The switched photodetector 480is similar to the switched photodetector 400 in FIG. 4A, but that theswitched photodetector 480 further includes one or more p-well regions446 and one or more p-well regions 448. In some implementations, the oneor more p-well regions 446 and the one or more p-well regions 448 may bepart of a ring structure that surrounds the first switch 408 and thesecond switch 410. In some implementations, the doping level of the oneor more p-well regions 446 and 448 may range from 1015 cm-3 to 1020cm-3. The one or more p-well regions 446 and 448 may be used as anisolation of photo-electrons from the neighboring pixels.

Although not shown in FIG. 4A-4E, in some implementations, an opticalsignal may reach to the switched photodetector from the backside of thesubstrate 402. One or more optical components (e.g., microlens orlightguide) may be fabricated on the backside of the substrate 402 tofocus, collimate, defocus, filter, or otherwise manipulate the opticalsignal.

Although not shown in FIG. 4A-4E, in some other implementations, thefirst switch 408 and the second switch 410 may alternatively befabricated to collect holes instead of electrons. In this case, thep-doped region 428 and the p-doped region 438 would be replaced byn-doped regions, and the n-doped region 426 and the n-doped region 436would be replaced by p-doped regions. The n-well regions 452, 454, 456,and 458 would be replaced by p-well regions. The p-well regions 446 and448 would be replaced by n-well regions.

Although not shown in FIG. 4A-4E, in some implementations, theabsorption layer 406 may be bonded to a substrate after the fabricationof the switched photodetector 400, 450, 460, 470, and 480. The substratemay be any material that allows the transmission of the optical signal412 to reach to the switched photodetector. For example, the substratemay be polymer or glass. In some implementations, one or more opticalcomponents (e.g., microlens or lightguide) may be fabricated on thecarrier substrate to focus, collimate, defocus, filter, or otherwisemanipulate the optical signal 412.

Although not shown in FIGS. 4A-4E, in some implementations, the switchedphotodetector 400, 450, 460, 470, and 480 may be bonded (ex: metal tometal bonding, oxide to oxide bonding, hybrid bonding) to a secondsubstrate with circuits including control signals, and/or, readoutcircuits, and/or phase lock loop (PLL), and/or analog to digitalconverter (ADC). A metal layer may be deposited on top of the switchedphotodetector that may be used as a reflector to reflect the opticalsignal incident from the backside of the substrate 402. Adding such amirror like metal layer may increase the absorption efficiency (quantumefficiency) of the absorption layer 406. For example, the absorptionefficiency of photodetectors operating at a longer NIR wavelengthbetween 1.0 μm and 1.6 μm may be significantly improved by addition of areflecting metal layer. An oxide layer may be included between the metallayer and the absorptive layer to increase the reflectivity. The metallayer may also be used as the bonding layer for the wafer-bondingprocess. In some implementations, one or more switches similar to 408and 410 can be added for interfacing control signals/readout circuits.

Although not shown in FIG. 4A-4E, in some implementations, theabsorption layer 406 may be partially or fully embedded/recessed in thesubstrate 402 to relieve the surface topography and so ease thefabrication process. An example of the embedment technique is describedin U.S. Patent Publication No. US20170040362 A1.

FIGS. 4F-4I illustrate an example design 490 for selectively forming anabsorption layer on a substrate. The design 490 may be used to fabricatethe switched photodetectors described in FIGS. 1A-4E, for example.Referring to FIG. 4F, a recess 492 is formed on the substrate 402. Therecess 492 may define the photodetector area for an NIR pixel. Therecess may be formed using lithography followed by a dry etching of thesubstrate 402. The shape of the recess may correspond to the shape ofthe pixel, such as a square, a circle, or other suitable shapes.

Referring to FIG. 4G, a dielectric layer may be deposited over thesubstrate, and a directional etch may be performed to form a sidewallspacer 494. The directional etch may be an anisotropic dry etch. Thespacers 494 may be a dielectric material such as various oxides andnitrides that separates the sidewalls of an absorption layer that willbe formed from the substrate 402. In some implementations, the spacers494 may be omitted, and an embedded portion of the absorption layer tobe formed may be in direct contact with a surface of the recess 492formed in the substrate 402, such as a [110] sidewall of a siliconsubstrate.

Referring to FIG. 4H, a germanium or germanium-silicon absorption layer496 is selectively grown from the substrate 402. For example, theabsorption layer 496 may be formed using epitaxial growth throughchemical vapor deposition (CVD) system. The resulting absorption layer496 is partially embedded in the recess 492 formed on the substrate 402.The absorption layer 496 may be the absorption layers of the switchedphotodetectors described in FIGS. 1A-4E, for example.

Referring to FIG. 4I, the germanium or germanium-silicon absorptionlayer 496 is planarized with the substrate 402, resulting in afully-embedded absorption layer 496. The germanium or germanium-siliconabsorption layer 496 may be planarized using chemical mechanicalpolishing (CMP) or any other suitable techniques. In someimplementations, the planarization of the germanium or germanium-siliconabsorption layer 496 with respect to the surface of the substrate 402may be omitted if the surface topography is acceptable for subsequentfabrication process steps.

FIG. 5A shows an example photodetector 500 for converting an opticalsignal to an electrical signal. The photodetector 500 includes anabsorption layer 506 fabricated on a substrate 502, and a first layer508 formed on top of the absorption layer 506 and the substrate 502. Thesubstrates 502 may be similar to the substrate 102 described previously,and the absorption layers 506 may be similar to the absorption layer 106described previously, and may be formed, for example, from Ge or GeSiwith Ge concentration ranging from 1-99%. The background doping polarityand doping level of the Ge or GeSi absorption layer 506 may be p-typeand range from 1014 cm-3 to 1016 cm-3. The background doping level maybe due to, for example, explicit incorporation of doping, or due tomaterial defects introduced during formation of the absorption layer506. The absorption layer 506 of the photodetector 500 has a mesastructure and is supported by the substrate 502, and while a verticalsidewall has been shown, the shape and sidewall profile of the mesastructure may depend on the specifics of the growth and fabricationprocess for the absorption layer 506.

The first layer 508 covers an upper surface and side surfaces of theabsorption layer 506, and covers a portion of an upper surface of thesubstrate 502 on which the absorption layer 506 is formed. The firstlayer 508 may be formed from a Complementary Metal-Oxide-Semiconductor(CMOS) process compatible material (CPCM), such as amorphous silicon,polysilicon, epitaxial silicon, aluminum oxide family (e.g., Al2O3),silicon oxide family (e.g., SiO2), Ge oxide family (e.g., GeO2),germanium-silicon family (e.g., Ge0.4Si0.6), silicon nitride family(e.g., Si3N4), high-k materials (e.g. HfOx, ZnOx, LaOx, LaSiOx), and anycombination thereof. The presence of the first layer 508 over thesurfaces of the absorption layer 506 may have various effects. Forexample, the first layer 508 may act as a surface passivation layer tothe absorption layer 506, which may reduce dark current or leakagecurrent generated by defects present at the surface of the absorptionlayer 506. In the case of a germanium (Ge) or a germanium-silicon (GeSi)absorption layer 506, the surface defects may be a significant source ofdark current or leakage current, which contributes to an increased noiselevel of the photocurrent generated by the photodetector 500. By formingthe first layer 508 over the surfaces of the absorption layer 506, thedark current or leakage current may be reduced, thereby reducing thenoise level of the photodetector 500. As another example, the firstlayer 508 may modulate a Schottky barrier level between a contact formedon the photodetector 500 and the absorption layer 506 and/or thesubstrate 502. This barrier modulation effect will be described at alater paragraph.

FIG. 5B shows an example photodetector 510 for converting an opticalsignal to an electrical signal. The photodetector 510 is similar to thephotodetector 500 in FIG. 5A, but differs in that the absorption layer506 is partially embedded in a recess formed on the substrate 502, andthe photodetector 510 further includes spacers 512. The spacers 512 maybe a dielectric material such as various oxides and nitrides thatseparates the sidewalls of the absorption layer 506 from the substrate502. In some implementations, the spaces 512 may be omitted, and theembedded portion of the absorption layer 506 may be in direct contactwith a surface of the recess formed in the substrate 502, such as a[110] sidewall of a silicon substrate. An example of the embedmenttechnique is described in U.S. Patent Publication No. US20170040362 A1.

FIG. 5C shows an example photodetector 520 for converting an opticalsignal to an electrical signal. The photodetector 520 is similar to thephotodetector 510 in FIG. 5B, but differs in that the absorption layer506 is fully embedded in the recess formed on the substrate 502. Anexample of the embedment technique is described in U.S. PatentPublication No. US20170040362 A1.

FIG. 5D shows an example switched photodetector 530 for converting anoptical signal to an electrical signal. The switched photodetector 530is similar to the photodetector 510 in FIG. 5B, but differs in that afirst switch 532 and a second switch 542 have been fabricated in theabsorption layer 506 and the first layer 508. The first switch 532 maybe similar to the first switch 108 in FIG. 1A, but further includes afirst readout contact 535 coupled to a first n-doped region 534 and afirst control contact 538 coupled to a first p-doped region 537.Similarly, the second switch 542 may be similar to the second switch 110in FIG. 1A, but further includes a second readout contact 545 coupled toa second n-doped region 544 and a second control contact 548 coupled toa second p-doped region 547. The first and second p-doped regions 537and 547 may be control regions, and the first and second n-doped regions534 and 544 may be readout regions. The first and second readoutcontacts 535 and 545 are connected to respective readout circuitssimilar to readout circuits 124 and 134 shown in FIG. 1A. The first andsecond control contacts 538 and 548 are connected to respective controlsignals, such as the control signals 122 and 132 shown in FIG. 1A.

The contacts 535, 538, 545, and 548 provide electrical contacts to therespective doped regions, and may be formed from various electricallyconducting materials. Examples of contact materials include varioussilicides, Ta—TaN—Cu stack, Ti—TiN—W stack, aluminum, and variouscombinations of such materials. In some implementations, the readoutcontacts 535 and 545 may be formed from different materials than thecontrol contacts 538 and 548. The contacts 535, 538, 545, and 548 mayhave various physical configurations. The dimensions of the contacts mayrange from being as small as 10's of nanometers in diameter or width.While a single contact 535, 538, 545, or 548 are shown to be coupled toeach of the doped regions, two or more contacts may be coupled to thedoped regions to, for example, reduce contact resistance or improvereliability, as is customary in semiconductor device manufacturingprocess.

FIG. 5E shows an example switched photodetector 550 for converting anoptical signal to an electrical signal. The switched photodetector 550is similar to the switched photodetector 530 in FIG. 5D, but differs inthat the first switch 532 and the second switch 542 further includen-well regions 539 and 549, respectively, and p-well regions 536 and546, respectively. Additions of the n-well regions and the p-wellregions may modify the electrical and/or optical properties of thephotodetector 550. In some implementations, the doping level of then-well regions 539 and 549 and p-well regions 536 and 546 may range from1015 cm-3 to 1017 cm-3.

The arrangement of the p-doped region 537, the n-well region 539, ap-type absorption layer 506, the n-well region 549, and the p-dopedregion 547 forms a PNPNP junction structure. In general, the PNPNPjunction structure reduces a flow of leakage current from the firstcontrol signal 122 to the second control signal 132, or alternativelyfrom the second control signal 132 to the first control signal 122. Thearrangement of the n-doped region 534, the p-well region 536, the p-typeabsorption layer 506, the p-well region 546, and the n-doped region 544forms an NPN junction structure. In general, the NPN junction structurereduces a charge coupling from the first readout circuit 124 to thesecond readout circuit 134, or alternatively from the second readoutcircuit 134 to the first readout circuit 124.

In some implementations, the p-doped region 537 is formed entirelywithin the n-well region 539. In some other implementations, the p-dopedregion 537 is partially formed in the n-well region 539. For example, aportion of the p-doped region 537 may be formed by implanting thep-dopants in the n-well region 539, while another portion of the p-dopedregion 537 may be formed by implanting the p-dopants in the absorptionlayer 506. Similarly, in some implementations, the p-doped region 547 isformed entirely within the n-well region 549. In some otherimplementations, the p-doped region 547 is partially formed in then-well region 549. In some implementations, the n-well regions 539 and549 form a continuous n-well region that includes at least a portion ofboth the p-doped regions 537 and 547.

In some implementations, the n-doped region 534 is formed entirelyoutside the p-well region 536. In some other implementations, then-doped region 534 is partially formed in the p-well region 536. Forexample, a portion of the n-doped region 534 may be formed by implantingthe n-dopants in the p-well region 536, while another portion of then-doped region 534 may be formed by implanting the n-dopants in theabsorption layer 506. Similarly, in some implementations, the n-dopedregion 544 is formed entirely outside the p-well region 546. In someother implementations, the n-doped region 544 is partially formed in thep-well region 546.

While FIGS. 5D and 5E show switched photodetectors with a partiallyembedded absorption region 506, the same construction can be applied tophotodetector 500 having non-embedded absorption layer 506, and tophotodetector 520 having a fully-embedded absorption layer 506 toachieve analogous effects.

While n-well regions 539 and 549, and p-well regions 536 and 546 havebeen illustrated in combination for the purpose of illustration, thewells may be individually implemented, or implemented in anycombination.

FIG. 5F shows an example switched photodetector 560 for converting anoptical signal to an electrical signal. The switched photodetector 560is similar to the switched photodetector 530 in FIG. 5D, but differs inthat the respective p-doped regions 537 and 547 of switches 532 and 542have been omitted. As a result, the first and second control contacts538 and 548 form Schottky junctions to the first layer 508. Schottkyjunction is an electrical junction formed between a metal and asemiconductor, when the semiconductor is not intentionally doped ordoped to a moderate dopant concentration, such as below approximately1×1015 cm-3. A region 562 marks a leakage path between the first controlcontact 538 and the second control contact 548 through the first layer508 and the absorption layer 506, which will be described in more detailin relation to FIG. 5G.

FIG. 5G shows an example band diagram 570 of the leakage path formedbetween the control contacts 538 and 548. The band diagram 570illustrates various energy levels that charge carriers such as anelectron 572 and a hole 574 experiences at various locations along aleakage path. The vertical axis corresponds to an energy level E, andthe horizontal axis corresponds to a position x along the leakage pathformed between the control contacts 538 and 548. An example scenariowhere the electrical potential energy of the first control contact 538is higher than that of the second control contact 548 (e.g., firstcontrol signal 122 has a lower voltage than the second control signal132) is shown. The potential difference manifests as a downward slope ofthe overall band diagram from the first control contact 538 to thesecond control contact 548. The energy levels and positions as shown arefor illustration purposes, and may not represent actual values.

An electron barrier 573 and a hole barrier 575 are examples of aSchottky barrier. A Schottky junction is characterized by presence of aSchottky barrier, which is a potential energy barrier that needs to beovercome by the electron 572 and hole 574 in order for those carriers toflow across the Schottky junction. The value of the barriers 573 and 575can vary depending on a work function of the material of contacts 538and 548, and the material of the first layer 508. As such, by selectingan appropriate combination of contact material and first layer material,a desired level of electron barrier 573 and hole barrier 575 may be set.

The electron 572 must overcome the electron barrier 573 between thefirst control contact 538 and the first layer 508. By providing asufficiently high electron barrier 573, the voltage potential of thecontrol signal 122 applied to the first control contact may be unable toovercome the barrier 573. As such, the electron barrier 573 may blockthe electron 572 from flowing into the absorption layer 506. In caseswhere the electron 572 does overcome the electron barrier 573, which maybe due to statistical fluctuation of a thermal energy of the electron572 (“thermionic emission”) or quantum tunneling, the electron 572 mayflow across the absorption layer 506 to the first layer 508 adjacent tothe second control contact 548. Another electron barrier is presented bya junction formed between the absorption layer 506 and the first layer508, which may further block electron 572 from flowing into the secondcontrol contact 548, thereby reducing a leakage current of electronsfrom the first control contact 538 to the second control contact 548.

Similarly, the hole 574 must overcome the hole barrier 575 between thesecond control contact 548 and the first layer 508. By providing asufficiently high hole barrier 575, the voltage potential of the controlsignal 132 applied to the second control contact may be unable toovercome the barrier 575. As such, the hole barrier 575 may block thehole 574 from flowing into the absorption layer 506. In cases where thehole 574 does overcome the hole barrier 575, which may be due tostatistical fluctuation of a thermal energy of the hole 574 (“thermionicemission”) or quantum tunneling, the hole 574 may flow across theabsorption layer 506 to the first layer 508 adjacent to the firstcontrol contact 538. Another hole barrier is presented by a junctionformed between the absorption layer 506 and the first layer 508, whichmay further block hole 574 from flowing into the first control contact538, thereby reducing a leakage current of holes from the second controlcontact 548 to the first control contact 538.

When light is being illuminated to the absorption layer 506, the photon576 of the light may be absorbed by an electron in a valence band of theabsorption layer 506 and, resulting in creation of an electron-hole asindicated by the vertical arrow adjacent to the photon 576. The electronof this electron-hole pair forms a photocurrent that is to be capturedby the readout circuits 124 and/or 134 through the respective readoutcontacts 535 and/or 545, and should not flow into the control contacts538 and 548. In this case, the barriers formed by the interface betweenthe first layer 508 and the absorption layer 506 may prevent such aflow, thereby improving photocurrent collection efficiency of thereadout circuits.

When the first layer 508, such as amorphous silicon or polysilicon orcrystalline silicon or germanium-silicon, is inserted between thecontrol contacts 538 and 548 and the absorption layer 506, such as aGeSi mesa, the Schottky barrier of the Metal-Semiconductor (MS) junctionis modified, resulting in partial blocking of the electrons or holesinjected into the first layer 508 by the contacts 538 and 548 asexplained above. The power consumption of a ToF pixel such as theswitched photodetectors described herein is partially determined by aleakage current flowing between the two control contacts 538 and 548connected to the two control circuits. As such, by partially blockingthe electrons or holes injected by the contacts 538 and 548, the powerconsumption of the ToF pixel can be significantly reduced.

FIG. 5H shows an example switched photodetector 580 for converting anoptical signal to an electrical signal. The switched photodetector 580is similar to the switched photodetector 560 in FIG. 5F, but differs inthat the photodetector 580 further includes the n-well regions 539 and549, and the p-well regions 536 and 546. The structures and effects ofthe n-well regions 539 and 549, and the p-well regions 536 and 546 havebeen described in relation to FIG. 5E. In addition, the n-well regions539 and 549 overlap with at least a portion of the first layer 508beneath the control contacts 538 and 548, which can contribute to anenhancement in the voltage drop inside the absorption layer 506.Enhancement in the voltage drop inside the absorption layer 506increases the magnitude of electric field established within theabsorption layer 506, which may improve capturing efficiency of thephoto-generated electrons by the readout circuits 124 and/or 134 throughthe respective readout contacts 535 and/or 545.

FIG. 5I shows an example switched photodetector 582 for converting anoptical signal to an electrical signal. The switched photodetector 582is similar to the switched photodetector 550 in FIG. 5E, but differs inthat the first switch 532 is now located on the substrate 502 andadjacent to the absorption region 506 on the left side, and the secondswitch 542 are now located on the substrate 502 and adjacent to theabsorption region 506 on the right side. The operations of the switchedphotodetector 582 is analogous to that of previously described switchedphotodetectors. However, as electrical contacts formed between contactssuch as readout contacts 535 and 545 or control contacts 538 and 548 andsilicon substrate 502 generally have a lower dark current or leakagecurrent than electrical contacts formed between contacts and Ge or GeSiabsorption layer 506 (e.g., due to the substrate 502 having lessmaterial defects compared to the absorption layer 506), the overall darkcurrent or leakage current may be lowered in comparison to theconfiguration of photodetector 550 shown in FIG. 5E. Further, as aresult of the switches being placed on the substrate 502, thephoto-generated carriers from the light absorbed by the absorptionregion 506 now flows from the absorption region 506 to the substrate 502before reaching the readout circuits 124 and 134. Depending on thespecific geometry of the absorption region 506 and the spacer 512 andtheir material, the photo-carriers may conduct through the spacer 512,flow around the spacer 512, or combination thereof.

In some implementations, the p-doped regions 537 and 547 may be omittedin a configuration analogous to the configuration shown in FIG. 5F.While n-well regions 539 and 549, and p-well regions 536 and 546 havebeen illustrated in combination for the purpose of illustration, thewells may be omitted, be individually implemented, or implemented in anycombination.

FIG. 5J shows an example switched photodetector 586 for converting anoptical signal to an electrical signal. The switched photodetector 586is similar to the switched photodetector 582 in FIG. 5I, but differs inthat the respective p-doped regions 537 and 547 of switches 532 and 542have been omitted. As a result, the first and second control contacts538 and 548 form Schottky junctions to the first layer 508. The effectsof the Schottky junctions have been described in relation to FIGS. 5F-H.The band diagram 570 of FIG. 5G remain applicable to the region 562 ofthe photodetector 586, with the barriers formed by to the first layer508 now corresponding to barriers formed by the first layer 508, thesubstrate 502, and the spacer 512 due to the modified geometry ofphotodetector 586 relative to photodetector 506.

While the n-well regions 539 and 549, and the p-well regions 536 and 546have been illustrated in combination for the purpose of illustration,the wells may be omitted, be individually implemented, or implemented inany combination.

FIG. 5K shows an example switched photodetector 588 for converting anoptical signal to an electrical signal. The switched photodetector 588is similar to the switched photodetector 582 in FIG. 5I, but differs inthat the first switch 532 further includes a second p-doped region 537a, a third control contact 538 a coupled to the second p-doped region537 a, and a second n-well region 539 a in contact with the secondp-doped region 537 a, and the second switch 542 further includes asecond p-doped region 547 a, a fourth control contact 548 a coupled tothe second p-doped region 547 a, and a second n-well region 549 a incontact with the second p-doped region 547 a. The second p-doped regions537 a and 537 b are similar to second p-doped regions 537 and 547,respectively. The second n-well regions 539 a and 549 a are similar tosecond n-well regions 539 and 549, respectively. The third controlcontact 538 a is similar to the first control contact 538, and thefourth control contact 548 a is similar to the second control contact548. The third control contact 538 a is connected to the first controlsignal 122, and the fourth control contact 548 a is connected to thesecond control signal 132.

As the first control contact 538 and the associated doped regions arenot in direct contact with the absorption region 506, the electric fieldgenerated within the absorption region 506 by application of the firstcontrol signal 122 to the first control contact 538 may be relativelyweak in comparison to a configuration where the first control contact538 is in direct contact with the absorption layer 506, such as in theconfiguration of the photodetector 550 in FIG. 5E. By adding the thirdand fourth control contacts 538 a and 548 a and associated dopedregions, the carrier collection control efficiency of the photodetector586 may be improved over that of the photodetector 582 of FIG. 5I to becomparable to the carrier collection control efficiency of thephotodetector 550 in FIG. 5E, while at least partially retaining thebenefit of reduced dark current or leakage current by moving thecontacts to the substrate 502. Furthermore, as larger electric fieldwithin the absorption region can lead to increased photodetectorbandwidth, faster switching between the first switch 532 and the secondswitch 542, the additional control contacts 538 a and 548 a may alsocontribute to an improvement in operational speed of the photodetector584.

While the third control contact 538 a and the fourth control contact 548a are shown to share the respective control signal 122 and 132 for thefirst control contact 538 and the second control contact 548, in someimplementations, the contacts 538 a and 548 a may have independentcontrol signals that may be different from first and second controlsignals 122 and 132. For example, the control signal for the thirdcontrol contact 538 a may be smaller than the first control signal 122for the first control contact 538, as the control signal applied to thethird control contact 538 a may be have a greater effect on thephoto-generated carriers than the first control signal 122 applied tothe first control contact 538 due to the proximity of the second p-dopedregion 537 a to the carriers being generated in the absorption region506, and the same applies to the control signal for the fourth controlcontact 548 a.

In some implementations, the second p-doped regions 537 a and 547 a maybe omitted to form Schottky junctions, the effects of which have beenpreviously described in relation to FIGS. 5F-5H. While the n-wellregions 539 and 549, and the p-well regions 536 and 546 have beenillustrated in combination for the purpose of illustration, the wellsmay be omitted, be individually implemented, or implemented in anycombination.

While various configurations of the switched photodetectors having apartially embedded absorption layer 506 have been described in FIGS.5D-5K, the described configurations can be applied to switchedphotodetectors having a fully protruding absorption layer 506 such asthe configuration shown in FIG. 5A, and to switched photodetectorshaving a fully embedded absorption layer 506 such as the configurationshown in FIG. 5C and achieve analogous effects.

The photodetectors described in FIGS. 5A-5K may be incorporated into afront-side illumination (FSI) image sensor, or a back-side illuminationimage sensor (BSI). In the FSI configuration, the light enters thephotodetectors from the top through the first layer 508. In the BSIconfiguration, the light enters the photodetectors from the bottomthrough the substrate 502.

The control regions (e.g., p-doped regions 537 and 547) and the readoutregions (e.g., n-doped regions 534 and 544) may be at different heights.For example, in the case of photodetectors 530, 550, 560, and 580, andany configurations in which the control regions and the readout regionsare both located on the absorption region 506, a portion of theabsorption region 506 corresponding to the readout region or the controlregion may be etched, and the readout region or the control region maybe formed on the etched portion, resulting in a vertical offset betweenthe control region and the readout region. Similarly, in the case ofphotodetectors 582, 586, and 588, and any configurations in which thecontrol regions and the readout regions are both located on thesubstrate 502, a portion of the substrate 502 corresponding to thereadout region or the control region may be etched, and the readoutregion or the control region may be formed on the etched portion,resulting in a vertical offset between the control region and thereadout region

In some implementations, lens may be placed on an optical path of lightincident on the photodetectors. The lens may be, for example, a microball lens or a Fresnel Zone Plate (FZP) lens. As another example, for asilicon substrate 502, the lens may be formed directly on the substrate502 by etching of the substrate 502. Details regarding configurations ofthe lens will be provided in relation to FIGS. 7A-7C.

In some implementations, the interface between the absorption layer 506and the spacers 512 may be doped with n- or p-type dopants to improveelectrical isolation for holes and electrons, respectively. In someimplementations, the interface between the absorption layer 506 and thesubstrate 502 (e.g., the bottom interface) may be doped with n- orp-type dopants to improve electrical isolation for holes and electrons,respectively.

FIG. 6A shows an example switched photodetector 600 for converting anoptical signal to an electrical signal. The switched photodetector 600includes the substrate 502, the absorption region 506, the first switch532, the second switch 542, and a counter-doped region 610. Thecounter-doped region 610 is arranged within the absorption region 506.The first and second switches 532 and 542 are arranged on the absorptionlayer 506. The substrate 502, the absorption region 506, and first andsecond switches 532 and 542 have been previously described in relationto FIG. 5D.

The counter-doped region 610 is a portion of the absorption region 506that has been doped with a dopant specie to reduce a net carrierconcentration of the absorption region 506. An undoped semiconductormaterial has a certain concentration of charge carriers that maycontribute to current conduction even in absence of dopants, which isreferred to as the intrinsic carrier concentration of the semiconductor.The absorption region 506 is typically formed from semiconductormaterials, such as Silicon, Germanium, or an alloy of the two, and hasan associated intrinsic carrier concentration. This intrinsic carrierconcentration may vary depending on various factors, such as thematerial preparation method and defect level (defect concentration).Examples of the material preparation method include epitaxial growth,chemical vapor deposition (CVD), metal organic CVD (MOCVD), and physicalvapor deposition (PVD), and materials prepared using different methodsmay be different material defect levels. Typically, higher number ofmaterial defects correlates to higher level of intrinsic carrierconcentration level. For example, bulk crystalline Germanium may have anintrinsic p-type like carrier concentration of approximately 2*1013 cm-3at room temperature, while an epitaxially grown Germanium may have anintrinsic p-type like carrier concentration that is an order ofmagnitude higher at approximately 5*1014 cm-3. Depending on the materialtype and the nature of the defects, the semiconductor material may bep-type or n-type like.

Reducing a leakage current of switched photodetectors, such as thephotodetector 600, is important for reducing a power consumption of aTime-Of-Flight pixel. One of the contributors to the leakage current ofswitched photodetectors is a leakage current flowing between the controlregions, e.g. the current flow between the p-doped regions 537 and 547.One approach to reducing such current flow is by reducing a net carrierconcentration of the absorption region 506 between the two p-dopedregions 537 and 547. The net carrier concentration is the concentrationof carriers available for conducting the current, and may be determinedby combining the contributions of the intrinsic carrier concentrationwith extrinsic carrier concentration contributed by the dopants. Byappropriately selecting the electrical type, species, and concentrationof the dopants, the intrinsic carrier concentration may be compensated,or “counter-doped,” by the dopants, resulting in a lower net carrierconcentration for the semiconductor material. Typically, the leakagecurrent between the control regions is proportional to the net carrierconcentration when the intrinsic and net carriers have the samepolarity, i.e., both are p-type like or n-type like.

The type of dopants to be used for the counter-doped region 610 may beselected based on various factors, such as the material forming theabsorption region 506 and the nature of defects present in theabsorption region 506. For example, epitaxially grown Ge on Si substrate502 is typically a p-type material. In such a case, an n-type dopantspecie such a P, As, Sb, or F may be used to dope the counter-dopedregion 610. The doping may be performed in various ways, includingimplantation, diffusion, and in-situ doping during growth of thematerial. In some cases, dopants such as fluorine may passivate thedefects. The passivated defects may stop acting as sources of chargecarriers and therefore the net carrier concentration of theFluorine-doped absorption region 506 may be reduced and become moreintrinsic.

The concentration of dopants to be used for the counter-doped region 610may be selected based on the intrinsic carrier concentration of theabsorption region 506. For example, an epitaxially grown Germaniumhaving an intrinsic carrier concentration of approximately 51014 cm-3may be doped with a counter-dopant concentration of approximately 51014cm-3 to reduce the intrinsic carrier concentration toward that of thebulk crystalline Ge of approximately 21013 cm-3. In general, thecounter-doping concentration may range from 1*1013 cm-3 to 1*1016 cm-3.In some implementations, the counter-doped region 610 may have variabledopant concentrations across the region. For example, regions that arecloser to material interfaces, such as the bottom of the absorber 506,may have a higher intrinsic carrier concentration due to increaseddefect level, which may be better compensated by a correspondingly highcounter-doping level. In some implementations, the counter-dopantconcentration may be greater than the intrinsic carrier concentration ofthe absorption region 506. In such cases, the polarity of the absorptionregion 506 may be changed from p-type to n-type or vice versa.

While the counter-doped region 610 is shown to completely cover then-doped regions 534 and 544, and the p-doped regions 537 and 547, ingeneral, the counter-doped region 610 may cover just the p-doped regions537 and 547 or the n-doped regions 534 and 544. Additionally, while thecounter-doped region 610 is shown to be a continuous region, in general,it may be two or more separate regions. Furthermore, while thecounter-doped region 610 is shown to be only a portion of the absorptionregion 506, in general, the counter-doped region 610 may be formedacross the entire absorption region 506.

In some implementations, the counter-doped region 610 may function as adopant diffusion suppressor, which may contribute to formation of anabrupt junction profile. Formation of an abrupt junction profile betweenthe counter-doped region 610 and the p-doped regions 537 and 547 maylead to a lower leakage current and thereby reduce the power consumptionof ToF pixels. For example, in the case of a Ge absorption region 506,Fluorine doping may suppress diffusion of Phosphorous dopants in then-doped region 534.

In general, the counter-doped region 610 may be implemented in variousimplementations of the switched photodetectors to reduce the leakagecurrent between control regions.

In some implementations, the p-doped regions 537 and 547 may be omitted,resulting in formation of Schottky junctions, the effects of which havebeen described in relation to FIGS. 5F-5H.

FIG. 6B shows an example switched photodetector 620 for converting anoptical signal to an electrical signal. The switched photodetector 620is similar to the photodetector 600 in FIG. 6A but differs in that thefirst switch 532 and the second switch 542 further include n-wellregions 612 and 614, respectively. Additions of the n-well regions maymodify the electrical and/or optical properties of the photodetector620. In some implementations, the doping level of the n-well regions 612and 614 may range from 1015 cm-3 to 1017 cm-3. In some implementations,the n-well regions 612 and 614 may extend from the upper surface of theabsorption region 506 to the lower surface of the counter-doped region610 or to the interface between the absorption layer 506 and thesubstrate 502.

The arrangement of the p-doped region 537, the n-well region 612, thecounter-doped region 610, the n-well region 614, and the p-doped region547 forms a PNINP junction structure. In general, the PNINP junctionstructure reduces a flow of leakage current from the first controlsignal 122 to the second control signal 132, or alternatively from thesecond control signal 132 to the first control signal 122.

In some implementations, the p-doped region 537 is formed entirelywithin the n-well region 612. In some other implementations, the p-dopedregion 537 is partially formed in the n-well region 612. For example, aportion of the p-doped region 537 may be formed by implanting thep-dopants in the n-well region 612, while another portion of the p-dopedregion 537 may be formed by implanting the p-dopants in thecounter-doped region 610. Similarly, in some implementations, thep-doped region 547 is formed entirely within the n-well region 614. Insome other implementations, the p-doped region 547 is partially formedin the n-well region 614. In some implementations, the n-well regions612 and 614 form a continuous n-well region that includes at least aportion of both the p-doped regions 537 and 547.

Operation speed or bandwidth of a photodetector can be an importantperformance parameter for applications that benefit from high speeddetection of light, such as ToF detection. Among characteristics thatcan affect bandwidth of a photodetector is the physical size of thephotodetector, such as the area of the photodetector through which lightis received. Reducing the area of the photodetector, for example, canlead to a reduction in device capacitance, carrier transit time, or acombination of both, which typically results in an increase inphotodetector bandwidth. However, a reduction in the detection area of aphotodetector can lead to a reduction in the amount of light (i.e.,number of photons) detected by the photodetector. For example, for agiven intensity of light per unit area, the reduction in the area of thedetector leads to a reduction in detected light.

For applications that benefit from both high bandwidth and highdetection efficiency, such as ToF detection, addition of a microlensbefore the photodetector may be beneficial. The microlens can focus theincident light onto the photodetector, allowing a small-areaphotodetector to detect light incident over an area larger than itself.For example, a properly designed combination of a microlens and a spacerlayer (SL) that separates the microlens from the photodetector by aneffective focal length of the microlens can allow focusing of theincident light to a diffraction-limited spot that is on the order of thesquare of the optical wavelength of the incident light. Such a schemecan allow reduction of photodetector area while mitigating the potentialdownsides of the photodetector area reduction.

FIG. 7A shows a cross-sectional view of an example configuration 700 ofsilicon lenses integrated with photodetectors. The configuration 700includes a donor wafer 710 and a carrier wafer 730. The donor wafer 710includes multiple pixels 720 a through 720 c (collectively referred toas pixels 720), via 714, metal pad 716, and a first bonding layer 712.The carrier wafer 730 includes a second bonding layer 732. The donorwafer 710 and the carrier wafer 730 are bonded to each other through thefirst bonding layer 712 and the second bonding layer 732. The substrate710 may be similar to substrate 502 of FIG. 5A. The absorption region706 may be similar to the absorption region 506 of FIGS. 5A-5L.

The pixels 720 a through 730 c include absorption regions 706 a through706 c, respectively, and microlenses 722 a through 722 c (collectedreferred to as microlenses 722), respectively. The microlenses 722 areconvex lenses that are integrated into or on the donor wafer 710. Inapplications that benefit from high light collection efficiency, such asToF detection, addition of microlenses 722 may be beneficial. The convexconfiguration of the microlens 722 can cause light incident on themicrolens 722 to be focused toward the absorption region 706, which mayimprove light collection efficiency of the pixels 720, leading toimproved pixel performance. The arrangement of the pixel 720 with themicrolens 722 on a backside of the donor wafer 710 may be referred to asbackside illumination.

The microlens 722 has various characteristics that affect itsperformance, including geometrical parameters and material from which itis formed. The microlens 722 is typically implemented in a plano-convexconfiguration, with one surface facing the incident light and beingconvex with a radius of curvature, and the other surface being a planarsurface interfacing with the donor wafer 710 in or on which themicrolens 722 is formed. The plano-convex configuration of the microlens722 may lend itself to fabrication through standard semiconductorprocessing techniques. The microlens 722 may have a height HL and adiameter DL, and may be separated from a lens-facing surface of theabsorption region 706 by a height HO. In some implementations, HL mayrange from 1 to 4 μm, HO may range from 8 to 12 μm, HA may range from 1to 1.5 μm, and DL may range from 5 to 15 μm. In some implementations,for a spherical-type microlens 722, its radius of curvature may be setsuch that the focal length of the microlens 722 is approximately equalto HO to achieve optimal focusing of light onto the absorption region706. The determination of the focal length and the radius of curvaturemay be performed using various simulation techniques such as beampropagation method (BPM) and finite difference time domain (FDTD)technique. In some implementations, the microlens 722 is an asphericlens.

The microlens 722 can be formed from various materials and fabricated invarious ways. In general, various materials that are transparent for thewavelengths to be detected by the pixels 720 may be used. For example,the microlens 722 may be fabricated from materials having moderate tohigh index of refraction (e.g., >1.5), such as crystalline silicon,polysilicon, amorphous silicon, silicon nitride, polymer, or combinationthereof. For visible wavelengths, polymer materials may be used. For NIRwavelengths, silicon may be used as silicon is relatively transparent inthe NIR, and has a relatively high index of refraction (approximately3.5 at 1000 nm), making it well suited as a lens material in the NIR.Furthermore, as silicon is strongly absorbing in the visible wavelengths(e.g., <800 nm), a silicon microlens may block a substantial portion ofvisible light from reaching the absorption region 706, which may bebeneficial for applications where selective detection of NIR wavelengthsis desired (e.g., ToF detection). A crystalline silicon microlens 722may be fabricated by patterning and etching a surface of the donor wafer710, which is typically a crystalline silicon wafer. As another example,polysilicon or amorphous silicon may be deposited on the surface of thedonor wafer 710, which may then be patterned and etched in similarfashion. The formation of microlens 722 through etching of thecrystalline silicon donor wafer 710 or by etching of the polysilicon oramorphous silicon deposited on the donor wafer 710 is an example methodof integrally forming the microlens 722 on the donor wafer 710.

The patterning of the microlens 722 may be performed using, for example,grayscale lithography techniques. In grayscale lithography, a feature tobe patterned, such as the microlens, is exposed using a local gradationin the exposure dose, which translates into a gradation in the thicknessof the resulting photoresist mask that has been developed. For example,the photoresist mask can be patterned to have a similar shape as themicrolens 722. The photoresist mask is then transferred onto thematerial underneath, such as the crystalline silicon donor wafer 710, bysemiconductor etching techniques such as plasma-based directionaletching techniques, completing the fabrication of the microlens 722. Insome implementations, the local gradation in the exposure dose may beachieved, for example, by varying a fill-factor of sub-wavelengthfeatures on a photomask

The absorption regions 706 may be similar to absorption region 506described in relation to FIG. 5A. The carrier wafer 730 may includevarious electronic circuits that are coupled to the pixels 720. Forexample, the electronic circuits may be coupled through structures suchas the via 714. The via 714 may be coupled to a metal pad 716 tointerface with external electronics through, for example, a wire bond.

The carrier wafer 730 and the donor wafer 710 may be bonded ormechanically attached to one another through various techniques. Forexample, the first and second bonding layers 712 and 732 may be oxides(e.g., silicon dioxide), and the bonding may be an oxide-to-oxidebonding. As another example, the first and second bonding layers 712 and732 may be metals (e.g., copper), and the bonding may be ametal-to-metal bonding. As yet another example, the first and secondbonding layers 712 and 732 may be a combination of oxide and metals(e.g., silicon dioxide and copper), and the bonding may be a hybridbonding.

FIG. 7B shows a cross-sectional view of an example configuration 740 ofa microlens integrated with a photodetector. The configuration 740includes a microlens 742, an anti-reflection coating (ARC) layer 744, aspacer layer 746, a first layer 748, a second layer 750, a silicon layer752 and a photodetector 754. The ARC layer 744 is supported by themicrolens 742. The microlens 742 is supported by the spacer layer 746.The photodetector 754 may be supported by the silicon layer 752 or beformed within the silicon layer 752. The first layer 748 and the secondlayer 750 may be intermediate layers between the silicon layer 752 andthe spacer layer 746.

The ARC layer 744 is provided to reduce a reflection of light incidenton the microlens 742. The ARC layer 744, for example, may be designed tohave a refractive index that is the square root of the index of themicrolens 742, and have a thickness corresponding to a quarter of theincident wavelength. In some implementation, the ARC layer 744 may beformed from silicon dioxide. In some implementations, the ARC layer 744may include multiple layers to form a multi-layer ARC.

The configuration 740 may correspond to an integration of microlens 742in a back-side illuminated (BSI) image sensor configuration. Forexample, the silicon layer 752 can be a silicon substrate, such as thesubstrate 710 of FIG. 7A or substrate 502 of FIG. 5D, and thephotodetector 754 may be, for example, the switched photodetector 530 ofFIG. 5D. The interface between the silicon layer 752 and the secondlayer 750 may correspond to the bottom surface of the substrate 502opposite to the absorption region 506 of FIG. 5D. In such a BSIconfiguration, the second layer 750 formed on the silicon layer 752,e.g., the backside of the substrate 502, can include various structuresand layers typical in fabrication of a BSI illuminated sensor wafer.Examples of such structures and layers include an ARC layer for reducinglight reflection at the interface of the silicon layer 752, and a metalgrid, such as a tungsten grid, for blocking light into the silicon layer752 other than regions for receiving light, such as the regionsunderneath the microlens 742. The first layer 748 may be a thin layer ofmaterial that promotes adhesion of the spacer layer 746 to the secondlayer 750 for improving, among others, manufacturability and reliabilityof the configuration 740. The material for the first layer 748 may be,for example, various dielectric materials (e.g., SiO2, SiON, and SiN) orpolymers. In some implementation, the first layer 748 can be omitteddepending on the interaction between the second layer 750 and the spacerlayer 746 (e.g., in the case where the spacer layer 746 has goodadhesion with the second layer 750).

The configuration 740 may be fabricated by providing a sensor waferincluding the silicon layer 752, the photodetector 754, and the secondlayer 750, and depositing the first layer 748, the spacer layer 746, themicrolens 742, and the ARC layer 744 in the order given, and thenpatterning and etching to expose metal pads similar to the metal pad 716shown in FIG. 7A. The microlens 742 may be patterned and etched usingtechniques described in relation to fabrication of the microlens 722 ofFIG. 7A. While the ARC layer 744 is shown to be limited to the surfaceof the microlens 742, in general, the ARC layer 744 may extend to othersurfaces, such as the side surface of the microlens 742 and the uppersurface of the spacer layer 746.

Various characteristics of the components of a particular implementationof the configuration 740 configured for operational wavelength of 940 nmare given as an example. The microlens 742 has a refractive index of1.5316, a radius of curvature of 6 μm, a height of 4 μm, and a diameterDL of 10 μm. The ARC layer 744 is formed from SiO2, which has arefractive index of 1.46 at 940 nm and a thickness of 160.96 nm. Thespacer layer 746 has a refractive index of 1.5604, and a thickness of 10μm. The first layer 748 has a refractive index 1.5507 and a thickness of60 nm. The second layer 750 includes an ARC layer for the silicon layer752 and a tungsten grid. While specific characteristics have beenprovided, the characteristics may be modified to adapt the configuration740, for example, for different operational wavelengths, materials, andsize of the photodetector 754.

In some implementations, the second layer 750, which may be referred toas the “top layer” formed on top of the backside of a silicon substrateof a BSI image sensor, may be modified to improve the overall opticalperformance of configuration 740. The second layer 750, as previouslydescribed, typically includes metal grid embedded in a dielectric layer,such as tungsten grid embedded in a layer of SiO2. This layer of SiO2may serve as an ARC layer if the light was entering the silicon layer752 directly from air. However, due to the addition of the microlens742, the spacer layer 746 and the first layer 748 which all haverefractive indices that are significantly higher than that of air(approximately 1.0), the SiO2 layer may not function effectively inreducing the optical reflection at the interface between the siliconlayer 752 and the stacking of the first layer 748 and/or spacer layer746.

Table 1 shows simulation parameters and calculated transmission of animplementation of configuration 740. The layers and the thicknesses havebeen adapted and/or approximated for the purpose of performing asimulation that approximate the expected transmission of differentimplementations of the configuration 740.

TABLE 1 REFRACTIVE THICKNESS (μm) LAYERS INDEX Case 1 Case 2 ARC layer744 1.249 0.188 Spacer layer 746 1.560 10 First layer 748 1.551 0.06Second SiO₂ 1.451 0.8 layer Si₃N₄ 1.949 0 0.120 750 Silicon layer 7523.599 + 0.00135i 1 Transmission (%) 78.95 97.62

Referring to Table 1, case 1 corresponds to a second layer 750 thatincludes a standard single layer of SiO2, which results in a simulatedtransmission of approximately 79%. For applications where it isimportant to detect as much of the incident light as possible, such 21%loss of the incident light may not be acceptable. Such a drop intransmission can be mitigated by including a Si3N4 layer in the secondlayer 750 under the SiO2 layer as an intermediate layer between the SiO2layer and the silicon layer 752. By including approximately 121 nm ofSi3N4, the transmission can be improved to approximately 97.6%. As such,the intermediate layer may be referred to as an anti-reflection layer.In general, various optically transparent material with a refractiveindex greater than SiO2 may be used in place of Si3N4. Example materialsinclude SiON, SiN, Al2O3, HfO2, ZrO2, and La2O3, and high-k materials(e.g., materials with high dielectric constant) that are compatible withCMOS manufacturing processes. Suitable material may have a refractiveindex greater than, for example, 1.6, 1.7, 1.8, 1.9, or 2.0. Thicknessof the material should be adapted to be an odd multiple of a quarter ofthe wavelength of light within the material.

The addition of Si3N4 or high-k material layer directly on top of thesilicon layer 752 may result in an increase of a dark current of thephotodetector 754 due to, for example, increased surface defect at theSilicon-Si3N4 interface relative to Silicon-SiO2 interface. To mitigatesuch increase in dark current, in some implementations, a second layerof SiO2 can be inserted between the Si3N4 layer and the silicon layer752. Inserting the second layer of SiO2 of thickness ranging from 10 nmto 50 nm results in a transmission ranging from approximately 97.1% to85%, respectively. As such, inserting a thin layer of SiO2, such as 10nm, may be beneficial for mitigating the increase in dark current whilemaintaining high optical transmission.

Low leakage current flowing across control regions of a switchedphotodetector, as previously described, is an important performanceparameter, as it contributes to lowering power consumption ofapparatuses including the photodetector. Another important aspectperformance parameter is dark current flowing between a readout regionand the control region of a switched photodetector, as the dark currentcontributes to the noise of a signal detected by the switchedphotodetector, degrading the signal-to-noise ratio (SNR) of a measureToF signal.

FIG. 8A shows an example switch 800 for a switched photodetector. Theswitch 800 may be used as a first or second switch in various switchedphotodetectors described in the present specification. The switch 800 isformed in the absorption region 506 having the first layer 508, whichhave been described previously described in relation to FIG. 5A. Theswitch 800 includes an n-doped region 802, a readout contact 804 coupledto the n-doped region 802, a lightly doped n-well region 806, a p-dopedregion 812, a control contact 814 coupled to the p-doped region 812, alightly doped p-well region 816, and an n-well region 818. The edges ofthe n-doped region 802 and the p-doped region 812 are separated by adistance S. The n-doped region 802 and the p-doped region 812 may besimilar to the first n-doped region 534 and the first p-doped region 537of FIG. 5E. The n-well region 818 may be similar to the n-well region539 in FIG. 5E. The readout contact 804 and the control contact 814 maybe similar to the first readout contact 535 and the first controlcontact 538 in FIG. 5E. The p-doped region 812 may be a control region,and the n-doped regions 802 may be a readout region.

Origins of the dark current in a lateral PIN diode formed by the controlregion (p-doped region 812), the absorption region 506(undoped/intrinsic), and a readout region (n-doped region 802) includeShockley-Read-Hall (SRH) generation and band-to-band tunneling. SRHgeneration may be influenced by presence of surface defects at thesurface of the absorption region 506. The addition of the first layer508 partially reduces the surface defect, which can reduce the darkcurrent due to SRH generation. Increasing the distance S between then-doped region 802 and the p-doped region 812 can also reduce the darkcurrent due to, for example, lowering of the electrical field betweenthe n-doped region 802 and the p-doped region 812, which in turndecreases the SRH generation rate between the said regions. For example,the distance S should be kept at above 400 nm. However, increasing thedistance S can lead to a reduction in bandwidth of the photodetector dueto, for example, an increase in carrier transit time. Addition of thelightly doped n-well region 806, the lightly doped p-well region 816, orcombinations thereof may help overcome such tradeoff.

The respective lightly doped regions 806 and 816 have dopantconcentrations that are lower than the respective n-doped region 802 andthe p-doped region 812. For example, the lightly doped regions 806 and816 can have dopant concentrations on the order of 1*1017 cm-3, whichare lower than that of the n-doped region 802 and the p-doped region 812which can have dopant concentrations on the order of 1*1019 cm-3. Thepresence of the lightly doped regions reduces discontinuity in thedopant concentrations between the doped regions 802 and 812 and theabsorption region 506, which may have dopant concentrations on the orderof 1*1015 cm-3 or lower, by providing a region of intermediate dopantconcentration, which results in a reduction in the electric field valuesat the edges of the doped regions 802 and 812. By reducing the electricfield values, band-to-band tunneling may also be reduced, which leads tolowering of the dark current between the two doped regions 802 and 812.In addition, contributions from SRH generation may be reduced. Ingeneral, the doping concentration of the lightly doped regions 806 and816 may be set based on various factors such a geometry of the switch,doping concentration of the doped regions 802 and 812, and dopingconcentration of the absorption region 506.

FIG. 8B shows an example switch 820 for a switched photodetector. Switch820 is similar to the switch 800 in FIG. 8A, but differs in that insteadof the lightly doped regions 806 and 816, a trench 822 is formed in theabsorption region 506, which is filled by a dielectric fill 824. Thetrench 822 filled with the dielectric fill 824 can contribute to areduction in the dark current.

The dielectric fill 824 is typically an electrically insulating materialwith a dielectric constant lower than that of the surrounding absorptionregion 506. Electric field is able to penetrate further into a region oflow dielectric constant compared to region of high dielectric constant.By placing the dielectric-filled trench 822 in proximity to the dopedregions 802 and 812, some of the high electric field regions formedaround the doped regions 802 and 812 and in depletion regions (“spacecharge region”) surrounding the doped regions 802 and 812 are pulledinto the dielectric fill 824. Accordingly, SRH generation and/orband-to-band tunneling in the absorption region 506 is reduced.Furthermore, unlike the germanium absorption region 506, the dielectricfill 824 such as SiO2 is an insulator and does not contribute to SRHgeneration and/or band-to-band tunneling. Therefore, dark currentgeneration through SRH generation and/or band-to-band tunneling that iscaused by high electric field regions at the edges of the doped regions802 and 812 may be reduced.

The trench 822 may be formed by etching the absorption region throughdry (e.g., plasma etching) or wet (e.g., liquid chemical bath) etchingtechniques. The trench 822 may be etched to a depth similar to the depthof the doped regions 802 and 812 (e.g., 10-200 nm). The trench 822should overlap with at least a portion of high electric field regionssurrounding at least one of the n-doped region 802 or the p-doped region812. In some implementations, the trench 822 cuts into the doped regions802 and 812, removing a portion of the n-doped region 802 and thep-doped region 812. Once the trench 822 is formed, the first layer 508may be deposited over the trench 822 to passivate the defects present onthe surface of the trench 822. In the case of a germanium absorptionregion 806, the first layer 508 may be, for example, amorphous silicon,polysilicon, germanium-silicon, or a combination thereof. Then, thetrench 822 is filled with the dielectric fill 824, which may be, forexample, SiO2. The dielectric fill 824 should be clean withoutsignificant concentration of impurities to avoid generation of darkcurrent.

In some implementations, the depth of the trench may be deeper than thedepth of the doped regions 802 and 812. For example, for doped regions802 and 812 that are approximately 100 nm deep, a trench depth of 200 nmmay further reduce SRH generation and/or band-to-band tunneling. In someimplementations, greater than 50% reduction in SRH generation and/orband-to-band tunneling around the doped regions 802 and 812 may beobserved.

FIG. 8C shows an example switch 830 for a switched photodetector. Theswitch 830 is similar to the switch 800 of FIG. 8A, but further includesthe trench 822 and dielectric fill 824 of FIG. 8B. By simultaneouslyimplementing the lightly-doped regions 806 and 816 and the trench 822,the band-to-band tunneling, the SRH recombination, or combinationthereof may be further reduced over individually implementing either thelightly-doped regions 806 and 816 or the trench 822 in isolation.

In general, the reduction in dark current through the use of lightlydoped regions 806 and 816 or the trenches 822 depends on the specificdesign of the switch and the overall design of the switchedphotodetector that includes the switch. As such, while theimplementation shown in FIG. 8C includes both the lightly doped regions806 and 816 and the trenches 822, a decision to implement the lightlydoped regions, the trench, or combination of the two may be based on thespecific design of the switched photodetector in which the switch is tobe included. Furthermore, while a single trench 822 is shown, ingeneral, the trench 822 may be split into two or more trenches.

While the first layer 508 and the n-well 818 is included in theimplementations shown in FIGS. 8A-8D, the first layer 508, the n-well818, or both may be omitted in some implementations.

So far, various implementations of switched photodetectors and switchesfor the switched photodetectors have been described. Now, details of thevarious structures and components of switched photodetectors will bedescribed.

A switched photodetector is typically fabricated on a substrate, such assubstrate 102, 202, 302, 402, and 502. The substrate is a carriermaterial on which the switched photodetector is fabricated. Asemiconductor wafer is an example of a substrate. The substrate may bepart of the switched photodetector, but in general, the substrate maysimply provide a mechanical platform on which the switched photodetectoris fabricated. The substrate may be formed from different materials,such as Silicon, Germanium, compound semiconductors (e.g., III-V,II-VI), Silicon Carbide, glass, and sapphire. The substrate may includevarious layers within. For example, a Silicon-on-Insulator (SOI)substrate includes a base layer of silicon, an insulator layer (e.g.,SiO2) on the base layer of silicon, and a device layer of silicon on thelayer of insulator. The SOI may include additional devicelayer-insulator layer pairs. For example, a dual-SOI (DSOI) waferincludes two device layer-insulator layer pairs.

A switched photodetector includes an absorption region configured toabsorb incident light and convert the absorbed light into chargecarriers. Absorption layers 106, 206, 306, and 406, and absorptionregions 506 and 706 are examples of the absorption region. Theabsorption region may be formed from various absorber materials thatabsorb the light at the operational wavelengths of the switchedphotodetector. Example materials for the absorption region includeSilicon, Germanium, IV-IV semiconductor alloy (e.g., GeSn, GeSi), III-Vcompound semiconductors (e.g., GaAs, InGaAs, InP, InAlAs, InGaAlAs), andother materials in the group III, IV, and V of the periodic table. Insome implementations, absorption region may be a region within thesubstrate. For example, a region of a silicon substrate may be used asan absorption region for visible light.

In some implementations, the absorption region may be defined within alight-absorbing material by a change in material composition (e.g.,different GeSi composition), by doping a region within the absorbingmaterial (e.g., counter doped region), or by forming an optical windowto pass through light (e.g., tungsten grid openings in a BSI imagesensor).

The absorber material may be deposited on the substrate. For example,absorber material may be blanket-deposited on the substrate. In someimplementations, the absorber material may be deposited on anintermediate layer formed on the substrate. In general, the intermediatelayer may be selected based on the absorber material, the substrate, orboth. Such intermediate layer may improve device manufacturabilityand/or improve device performance. Example materials for theintermediate layer include silicon, graded germanium-silicon compoundmaterial, graded III-V material, germanium, GaN, and SiC. Gradedmaterial refers to a material that has a varying material compositionalong at least one direction. For example, a graded GeSi material mayhave a composition that varies from 1% Germanium on one end of thematerial to 99% Germanium of the other end of the material. In general,the starting and ending composition may be set, for example, based onthe substrate composition and the absorber material composition.

In some implementations, the absorber material can be epitaxially grownon the intermediate layer in two or more steps. For example, theabsorber material (e.g., Ge, GeSi) may be deposited on a dielectriclayer with openings to underlying substrate (e.g., crystalline Siliconsubstrate). Such multi-step growth procedure may improve materialquality (e.g., reduced number of material defects) when the absorbermaterial is deposited on a substrate having mismatched latticeconstants. Examples of such multi-step growth procedure is described inU.S. Pat. No. 9,786,715 titled “High Efficiency Wide Spectrum Sensor,”which is fully incorporated by reference herein.

FIGS. 9A-9D show example electrical terminals for use in switchedphotodetectors. Referring to FIG. 9A, an electrical terminal 900 includea region 902, and a contact metal 904, and a doped region 906. Theregion 902 is a material on which the electrical terminal 900 is formed,and may correspond to an absorption region, such as the absorptionregion 506, or a substrate, such as the substrate 502. The doped region906 may be a p-type (acceptor) doped region or an n-type (donor) dopedregion depending on the type of dopant. The doped region 906 istypically doped to a high doping concentration (e.g., between 1*1019 to51020 cm-3) to allow an Ohmic contact to be formed between the contactmetal 904 and the region 902. Such level of doping concentration may bereferred to as “degenerate doping.”

The contact metal 904 is a metallic material that is in contact with theregion 902 through the doped region 906. The contact metal may beselected from various metals and alloys based on the material of theregion 902 and dopants of the doped region 906. Examples include Al, Cu,W, Ti, Ta—TaN—Cu stack, Ti—TiN—W stack, and various silicides.

Referring to FIG. 9B, an electrical terminal 910 is similar to theelectrical terminal 900 of FIG. 9A, but differs in that the doped region906 is omitted. The direct placement of the contact metal 904 on theregion 902 without the doped region 906 may lead to formation of aSchottky contact, an Ohmic contact, or a combination thereof having anintermediate characteristic between the two, depending on variousfactors including the material of the region 902, the contact metal 904,and the impurity or defect level of the region 902.

Referring to FIG. 9C, an electrical terminal 920 is similar to theelectrical terminal 910 of FIG. 9B, but differs in that a dielectriclayer 922 is inserted between the contact metal 904 and the region 902.For example, for a (crystalline) germanium region 902, the dielectriclayer 922 may be amorphous silicon, polysilicon, or germanium-silicon.As another example, for a (crystalline) silicon region 902, thedielectric layer 922 may be amorphous silicon, polysilicon, orgermanium-silicon. The insertion of the dielectric layer 922 may lead toformation of a Schottky contact, an Ohmic contact, or a combinationthereof having an intermediate characteristic between the two.

Referring to FIG. 9D, an electrical terminal 930 is similar to theelectrical terminal 910 of FIG. 9B, but differs in that an insulatinglayer 932 is inserted between the contact metal 904 and the region 902.The insulating layer 932 prevents direct current conduction from thecontact metal 904 to the region 902, but allows an electric field to beestablished within the region 902 in response to an application of avoltage to the contact metal 904. The established electric field mayattract or repel charge carriers within the region 902. The insulatinglayer 932 may be SiO2, Si3N4, or high-k material.

A switch, such as the switch first switch 532 of FIG. 5D, of a switchedphotodetector includes a carrier control terminal and a carriercollection (readout) terminal. A carrier control terminal is a terminalconfigured to direct photo-generated carriers within the region 902 in acertain direction (e.g., toward the carrier collection terminal) byapplication of a control voltage through, for example, an external biascircuitry. The operation of the carrier control terminal has beendescribed in relation to the control signals 122 and 132 of FIG. 1A.Different types of electrical terminals may be used to implement thecarrier control terminal. For example, the electrical terminals 900,910, 920, and 930 may be used to implement the carrier control terminal.

A carrier collection terminal is a terminal configured to collect thephoto-generated carriers in the region 902. The carrier collectionterminal may be configured to collect electrons (e.g., n-type dopedregion 906) or holes (e.g., p-type doped region 906). The operation ofthe carrier collection terminal has been described in relation to thereadout circuits 124 and 134 of FIG. 1A. Different types of electricalterminals may be used to implement the carrier collection terminal. Forexample, the electrical terminals 900, 910, and 920 may be used toimplement the carrier collection terminal.

The number of carrier control and carrier collection terminals may bevaried based on a variety of considerations, such as target deviceperformance. As examples, a switched photodetector may have thefollowing exemplary configurations: 2 carrier control terminals and 2carrier collection terminals; 2 carrier control terminals and 1 carriercollection terminal; 4 carrier control terminals and 2 carriercollection terminals; and 4 carrier control terminals and 4 carriercollection terminals. In general, a switched photodetector can have anynumber of carrier control terminals and carrier collection terminalsgreater than 1.

When more two or more control terminals are implemented within aswitched photodetector, various combinations of the previously describedelectrical terminals may be used. For example, a combination of Ohmicand Schottky/Ohmic terminals (e.g., terminals 900 and 920), Ohmic andinsulating (e.g., terminals 900 and 930), insulating and Schottky/Ohmic(e.g., terminals 930 and 920), and Ohmic and Schottky/Ohmic, andinsulating (e.g., terminals 900, 920, and 930) may be used.

When more two or more carrier collection terminals are implementedwithin a switched photodetector, a combination of Ohmic andSchottky/Ohmic terminals (e.g., terminals 900 and 920) may be used.

The electrical terminals can have various shapes based on a variety ofconsiderations, such as manufacturability and device performance. FIG.9E shows an example top view of various shapes of an electricalterminal. The terminals 940 may have rectangular, triangular, circular,polygonal, or may be a combination of such shapes. The corners of theterminals may be sharp, or may be rounded. The shapes can be definedusing doping region, metal silicide, contact metal or any combinationthereof.

The absorption region and the substrate may be arranged in variousconfigurations, and the absorption region may take on various shapesbased on various considerations, such as manufacturability and deviceperformance. Referring to FIGS. 10A-10I, example configurations of anabsorption region and a substrate are shown. Specifically, referring toFIG. 10A, a configuration 1000 includes a substrate 1002 and anabsorption region 1004 protruding from an upper surface of the substrate1002. The substrate 1002 may be similar to substrate 502 described inrelation to FIG. 5D, and the absorption region 1004 may be similar toabsorption region 506 described in relation to FIG. 5D. Theconfiguration 1000 may be fabricated by depositing the absorption region1004 on the substrate 1002, and etching the absorption region 1004 intothe protruding structure.

Referring to FIG. 10B, a configuration 1010 is similar to theconfiguration 1000 in FIG. 10A, but now includes an intermediate layer1006 between the absorption region 1004 and the substrate 1002. Theintermediate layer may be a buffer layer that facilitates the growth ofthe absorption region 1004 over the substrate 1002. The configuration1010 may be fabricated by depositing an intermediate layer 1006 on thesubstrate 1002, depositing the absorption region 1004 on theintermediate layer 1006, and etching the absorption region 1004 and theintermediate layer 1006 into the protruding structure.

Referring to FIG. 10C, a configuration 1020 is similar to theconfiguration 1000 in FIG. 10A, but now the absorption region 1004 ispartially embedded in the substrate 1002. The configuration 1020 may befabricated by forming a recess on the substrate 1002, and selectivelydepositing the absorption region 1004 in the formed recess.Alternatively, the configuration 1020 may be fabricated by depositing asacrificial layer over the substrate 1002, etching through the depositedsacrificial layer to form the recess on the substrate 1002, selectivelydepositing the absorbing material, removing the absorbing materialdeposited outside of the recess by performing a planarizing step such asa chemical-mechanical polishing (CMP) step, and removing the sacrificiallayer through a selective etch, such as a wet chemical etch.

Referring to FIG. 10D, a configuration 1030 is similar to theconfiguration 1020 in FIG. 10C, but now the absorption region 1004 isfully embedded in the substrate 1002. The configuration 1030 may befabricated by forming a recess on the substrate 1002, depositing aselective layer of absorbing material over the substrate 1002, andremoving the absorbing material deposited outside of the recess byperforming a planarizing step, such as a chemical-mechanical polishing(CMP) step.

Referring to FIG. 10E, a configuration 1040 is similar to theconfiguration 1030 in FIG. 10D, but now the intermediate layer 1006 isinserted between, in the recess, the absorption region 1004 and thesubstrate 1002. The configuration 1040 may be fabricated by forming arecess on the substrate 1002, depositing a conformal layer of theintermediate layer 1006, depositing a blanket layer of absorbingmaterial over the intermediate layer 1006, and removing the absorbingmaterial and the intermediate layer deposited outside of the recess byperforming a planarizing step, such as a chemical-mechanical polishing(CMP) step.

Referring to FIG. 10F, a configuration 1050 is similar to theconfiguration 1040 in FIG. 10E, but now a second intermediate layer 1008replaces the first intermediate layer 1006 at the interface between asidewall of the absorption region 1004 and the sidewall of the recess ofthe substrate 1002. The configuration 1050 may be fabricated by forminga recess on the substrate 1002, depositing a conformal layer of thesecond intermediate layer 1008, performing an anisotropic blanketetching to remove the second intermediate layer 1008 along verticalsurfaces, depositing a conformal layer of the first intermediate layer1006, performing an anisotropic blanket etching to remove the firstintermediate layer 1006 along non-vertical surfaces, depositing aselective layer of absorbing material, and removing the absorbingmaterial and the first intermediate layer deposited outside of therecess by performing a planarizing step, such as a chemical-mechanicalpolishing (CMP) step. In an exemplary implementation, the firstintermediate layer 1006 may be formed from SiO2, and the secondintermediate layer 1008 may be formed from GeSi.

Referring to FIG. 10G, a configuration 1060 is similar to theconfiguration 1000 in FIG. 10A, but now includes a tiered intermediatelayer 1062 in which the absorption region 1004 is embedded. The tieredintermediate layer 1062 includes an opening 1064 to the substrate 1002,and a recess 1066 in which the absorption region 1004 is embedded. Theabsorption region 1004 contacts the substrate 1002 through the opening1064. The configuration 1060 may be fabricated by depositing anintermediate layer on the substrate 1002, etching the opening 1064throughout the entire thickness of the deposited intermediate layer,etching the recess 1066 in the deposited intermediate layer, depositingthe absorption region 1004 on the tiered intermediate layer 1062, andremoving the absorbing material deposited outside of the recess 1066 byperforming a planarizing step, such as a chemical-mechanical polishing(CMP) step.

Referring to FIG. 10H, a configuration 1070 is similar to theconfiguration 1060 in FIG. 10G, but now includes a second intermediatelayer 1072 in which the recess 1066 is formed. The configuration 1070may be fabricated by depositing the first intermediate layer 1062 on thesubstrate 1002, depositing the second intermediate layer 1072, etchingthe opening 1064 through the first intermediate layer 1062 and thesecond intermediate layer 1072, etching the recess 1066 in the secondintermediate layer 1072, depositing the absorption region 1004, andremoving the absorbing material deposited outside of the recess 1066 byperforming a planarizing step, such as a chemical-mechanical polishing(CMP) step.

Referring to FIG. 10I, a configuration 1080 is similar to theconfiguration 1040 in FIG. 10E, but now includes an opening 1084 formedon the intermediate layer 1006. The absorption region 1004 contacts thesubstrate 1002 through the opening 1084. The configuration 1080 may befabricated by forming a recess on the substrate 1002, depositing aconformal layer of the intermediate layer 1006, etching the opening1084, depositing a blanket layer of absorbing material over theintermediate layer 1006, and removing the absorbing material and theintermediate layer deposited outside of the recess by performing aplanarizing step, such as a chemical-mechanical polishing (CMP) step.

The absorption region, the carrier control terminals, and the carriercollection terminals may be arranged in various configurations based ona variety of considerations, such as manufacturability and deviceperformance. FIGS. 11A-11B show a top view and a side view of an exampleswitched photodetector 1100 in which the carrier control terminals andthe carrier collection terminals are placed on the substrate, and aportion of the substrate is the absorption region. In this example, theswitched photodetector 1100 includes a substrate 1102, an absorptionregion 1104, carrier collection terminals 1106, and carrier controlterminals 1108. The absorption region 1104 is a region within thesubstrate 1102. For example, for a silicon substrate 1102, theabsorption region 1104 is formed in silicon, and the absorption region1104 may absorb visible light. The absorption region 1104 may havevarious shapes, e.g., a square shape in a top view of the photodetector1100. The absorption region 1104 may extend from an upper surface of thesubstrate 1102 and into a desired depth below the upper surface. Forexample, the absorption region 1104 may extend 1 μm, 2 μm, 3 μm, μm, or10 μm below the upper surface of the substrate 1102. Adjacent pairs ofthe carrier collection terminal 1106 and the carrier control terminal1108 forms a switch. The absorption region 1104 is arranged between theadjacent pairs of carrier collection terminal 1106 and the carriercontrol terminal 1108. In some implementations, the adjacent pairs ofcarrier collection terminal and carrier control terminal are arrangedsymmetrically about the absorption region 1104 (e.g., on opposite sidesor on the four sides of the absorption region 1104). Such symmetricplacement may improve matching of carrier control and collectionperformance of the two switches formed by the pairs.

FIGS. 11C-11F show a top view and side views of example switchedphotodetectors in which the absorption regions are formed from amaterial different than the substrate. Referring to FIGS. 11C-11D, theswitched photodetector 1120 includes the substrate 1102, an absorptionregion 1124, the carrier collection terminals 1106, and the carriercontrol terminals 1108. FIG. 11C shows a top view of the switchedphotodetector 1120, and FIG. 11D shows a side view of the switchedphotodetector 1120. The switched photodetector 1120 is similar to theswitched photodetector 1100 of FIGS. 11A-11B, but differs in that theabsorption region 1124 of the switched photodetector 1120 is formed froma material different than the substrate 1102. For example, theabsorption region 1124 may be formed from germanium, and the substrate1102 may be a silicon substrate. The absorption region 1124 is fullyembedded in a recess formed in the substrate 1102. While specifics ofthe embedded structure are not shown, the embedded absorption region1124 may be implemented, for example, as described in relation to FIGS.10D-10F and FIG. 5C.

Referring to FIGS. 11E, a switched photodetector 1130 is similar to theswitched photodetector 1120 of FIGS. 11C-11D, but differs in that theabsorption region 1124 is now partially embedded in the substrate 1102.While specifics of the partially embedded structure are not shown, thepartially embedded absorption region 1124 may be implemented, forexample, as described in relation to FIG. 10C and FIG. 5B.

Referring to FIGS. 11F, a switched photodetector 1140 is similar to theswitched photodetector 1120 of FIGS. 11C-11D, but differs in that theabsorption region 1124 is now fully protruding on the substrate 1102.While specifics of the fully protruding structure are not shown, thefull protruding absorption region 1124 may be implemented, for example,as described in relation to FIGS. 10A-10B and FIG. 5A.

In some configurations of the switched photodetectors, the carriercollection terminals, the carrier control terminals, or both may beplaced on an absorption region. Descriptions of the implementationdetails of the substrate, the absorption region, the carrier controlterminals, and the carrier collection terminals will be omitted forbrevity. FIGS. 12A-12B show a top view and a side view of an exampleswitched photodetector 1200 in which the carrier collection terminalsare placed on the substrate, and the carrier control terminals areplaced on an absorption region. The switched photodetector 1200 includesa substrate 1202, an absorption region 1204, a light receiving region1205, carrier collection terminals 1206, and carrier control terminals1208. The light receiving region 1205 may indicate a portion of theabsorption region 1204 on which input light is incident, and may bephysically indistinguishable from the remaining portion of theabsorption region 1204. For example, a combination of a light shield(e.g., tungsten grid) and a microlens may block and focus the incidentlight onto the light receiving region 1205. The carrier collectionterminals 1206 are placed on the substrate 1202, and the carrier controlterminals 1208 are placed on the absorption region 1204 on a locationthat does not overlap with the light receiving region 1205. For theswitched photodetector 1200, the absorption region 1204 is fullyprotruding. The absorption region 1204 may be partially embedded asshown in FIG. 12C for a switched photodetector 1220, or fully embeddedas shown in FIG. 12D for a switched photodetector 1230.

FIGS. 12E-12F show a top view and a side view of an example switchedphotodetector 1240 in which both the carrier collection terminals andthe carrier control terminals are placed on the absorption region. Theswitched photodetector 1240 is similar to the switched photodetector1200 of FIGS. 12A-12B, but differs in that the carrier collectionterminals 1206 are now placed on the absorption region 1204 on alocation that does not overlap with the light receiving region 1205. Forthe switched photodetector 1240, the absorption region 1204 is fullyprotruding. The absorption region 1204 may be partially embedded asshown in FIG. 12G for a switched photodetector 1250, or fully embeddedas shown in FIG. 12H for a switched photodetector 1260.

While light receiving regions 1205 in FIGS. 12A-12H are shown to notoverlap with the carrier collection terminals or the carrier controlterminals, in general, the light receiving regions 1205 may overlap withat least a portion of the carrier control terminals, at least a portionof the carrier collection terminals, and at least a portion of thevarious n-doped regions or p-doped regions. For example, such overlapmay be present for a pixel that is used in both FSI and BSIconfigurations.

In some configurations of the switched photodetectors, each switch mayinclude more than one carrier collection terminals, more than onecarrier control terminals, or more than one of both. Descriptions of theimplementation details of the substrate, the absorption region, thelight receiving region, the carrier control terminals, and the carriercollection terminals will be omitted for brevity. FIGS. 13A-13G show topviews of example switched photodetectors having switches that includemultiple carrier control terminals or multiple carrier collectionterminals. Referring to FIG. 13A, the switched photodetector 1300includes a substrate 1302, an absorption region 1304, a light receivingregion 1305, substrate carrier collection terminals 1306, substratecarrier control terminals 1308, and absorber carrier control terminals1309. The substrate carrier collection terminals 1306 are carriercollection terminals placed on a substrate, such as the substrate 1302.The substrate carrier control terminals 1308 are carrier controlterminals placed on a substrate, such as the substrate 1302. Theabsorber carrier control terminals 1309 are carrier control terminalsplaced on an absorption region, such as the absorption region 1304. Theeffects and implementation details of the absorber carrier controlterminals 1309 in combination with the substrate carrier controlterminal 1308 have been described in relation to FIG. 5K. In someimplementations, the illustrated arrangement of the substrate carriercollection terminals 1306, the substrate carrier control terminals 1308,and the absorber carrier control terminals 1309 may be repeated in asecond row as shown in FIG. 13B.

Referring to FIG. 13B, the switched photodetector 1310 is similar to theswitched photodetector 1300 of FIG. 13A, but differs in that thesubstrate carrier control terminals 1308 has been omitted, and a secondrow of pairs of terminals 1306 and 1309 has been added. The second pairsof control and collection terminals may function independent of, orfunction in combination with the first pairs of control and collectionterminals that are adjacent to the second pairs of terminals.

Referring to FIG. 13C, the switched photodetector 1320 is similar to theswitched photodetector 1310 of FIG. 13B, but differs in that one of thesubstrate carrier collection terminals 1306 has been removed from eachside of the light receiving region 1305. The pairs of absorber carriercontrol terminals 1309 on each side of the light receiving region 1305in combination with respective substrate carrier collection terminals1306 may function as a switch.

Referring to FIG. 13D, the switched photodetector 1330 is similar to theswitched photodetector 1310 of FIG. 13B, but differs in that thesubstrate carrier collection terminals 1306 have been moved onto theabsorption region 1304 as absorber carrier collection terminals 1307.

Referring to FIG. 13E, the switched photodetector 1340 is similar to theswitched photodetector 1330 of FIG. 13D, but differs in that one of theabsorber carrier collection terminals 1307 has been removed from eachside of the light receiving region 1305. The pairs of absorber carriercontrol terminals 1309 on each side of the light receiving region 1305in combination with respective absorber carrier collection terminals1307 may function as a switch.

Referring to FIG. 13F, the switched photodetector 1350 is similar to theswitched photodetector 1330 of FIG. 13D, but differs in that one of theabsorber carrier control terminals 1309 has been removed from each sideof the light receiving region 1305. The pairs of absorber carriercollection terminals 1307 on each side of the light receiving region1305 in combination with respective absorber carrier control terminals1309 may function as a switch.

Referring to FIG. 13G, the switched photodetector 1360 is similar to theswitched photodetector 1330 of FIG. 13D, but differs in that four pairsof absorber carrier collection and control terminals 1307 and 1309 arenow symmetrically arranged about the light receiving region 1305. Eachpair of terminals 1307 and 1309 may function as a switch. Each switchmay function independently, or function in tandem with another switch.For example, east and west switches may be controlled as a first switchand north and south switches may be controlled as a second switch. Asanother example, the east and south switches may be controlled as afirst switch and west and north switches may be controlled as a secondswitch.

While light receiving regions 1305 in FIGS. 13A-13G are shown to notoverlap with the carrier collection terminals or the carrier controlterminals, in general, the light receiving regions 1305 may overlap withat least a portion of the carrier control terminals, at least a portionof the carrier collection terminals, and at least a portion of thevarious n-doped regions or p-doped regions. For example, such overlapmay be present for a pixel that is used in both FSI and BSIconfigurations.

For switches having two or more carrier control terminals, the carriercontrol terminals may be biased independently with independentlycontrolled bias voltages, or the carrier control terminals may beshorted together and biased with a single bias voltage. FIGS. 14A-14Bshow top views of example switched photodetectors having switches thatinclude multiple carrier control terminals. Referring to FIG. 14A, theswitched photodetector 1400 is similar to the switched photodetector1300 of FIG. 13A. The substrate carrier collection terminal 1306, thesubstrate carrier control terminal 1308, and the absorber carriercontrol terminal 1309 on the left side of the light receiving region1305 forms a first switch 1410. The substrate carrier collectionterminal 1306, the substrate carrier control terminal 1308, and theabsorber carrier control terminal 1309 on the right side of the lightreceiving region 1305 forms a second switch 1420.

Within the switches 1410 and 1420, the substrate carrier controlterminal 1308 and the absorber carrier control terminal 1309 may beshorted together and biased with a single bias voltage, or biased withindependently controlled bias voltages. For example, the substratecarrier control terminal 1308 of the first switch 1410 is biased withvoltage VB1 and the absorber carrier control terminal 1309 is biasedwith voltage VA1. Similarly, the substrate carrier control terminal 1308of the second switch 1420 is biased with voltage VB2 and the absorbercarrier control terminal 1309 is biased with voltage VA2. In someimplementations, the control terminals closer to the light receivingregion 1305, such as the absorber carrier control terminals 1309, may bebiased to respective control voltages VA1 and VA2 to direct thephoto-generated carriers in the light receiving region 1305 toward thesubstrate carrier collection terminals 1306 that are biased to voltagesVc1 and Vc2 as shown. Simultaneously, the substrate control terminals1308 may be biased to voltages Vb1 and Vb2 to establish a high electricfield between the substrate control terminals 1308 and the substratecarrier collection terminals 1306. With sufficiently high electric fieldbetween the terminals 1308 and 1306, a region of avalanchemultiplication may be established between the terminals 1308 and 1306,providing an avalanche gain to the photo-generated carriers that havebeen directed toward the substrate carrier collection terminal 1306 bythe absorber carrier control terminal 1309. As a result, thephoto-generated carrier may be multiplied by an avalanche gain, whichmay increase the photocurrent signal generated by the switchedphotodetector 1400.

Referring to FIG. 14B, the switched photodetector 1430 is similar to theswitched photodetector 1400 of FIG. 14A, but differs in that thesubstrate carrier collection terminals 1306 have been relocated onto theabsorption region 1304 as absorber carrier collection terminals 1407,and the substrate carrier control terminals 1308 have been relocatedonto the absorption region 1304 as absorber carrier control terminals1409. The effects of the different biases to the terminals are analogousto the effects described in relation to FIG. 14A.

While light receiving regions 1305 in FIGS. 14A-14B are shown to notoverlap with the carrier collection terminals or the carrier controlterminals, in general, the light receiving regions 1305 may overlap withat least a portion of the carrier control terminals, at least a portionof the carrier collection terminals, and at least a portion of thevarious n-doped regions or p-doped regions. For example, such overlapmay be present for a pixel that is used in both FSI and BSIconfigurations.

In typical implementations of an image sensor, multiple sensor pixels(e.g., photodetectors) are arranged in an array to allow the imagesensor to capture images having multiple image pixels. To allow highintegration density, multiple sensor pixels are typically arranged inclose proximity to each other on a common substrate. For asemiconducting substrate, such as p-doped silicon substrates, theproximity of the sensor pixels to each other may cause electrical and/oroptical crosstalk between the sensor pixels, which may, for example,decrease a signal to noise ratio of the sensor pixels. As such, variousisolation structures may be implemented to improve electrical isolationbetween the sensor pixels.

FIGS. 15A-15G show cross-sectional views of example configurations ofsensor pixel isolation. Referring to FIG. 15A, an example configuration1500 includes a substrate 1502, sensor pixels 1510 a and 1510 b(collectively referred to as sensor pixels 1510), and an isolationstructure 1506. The sensor pixels 1510 a and 1510 b include respectiveabsorption regions 1504 a and 1504 b. Each sensor pixels 1510 may be aswitched photodetector, such as the switched photodetectors of FIGS.5A-5L. Details of the sensor pixels 1510 has been omitted for clarity.

The isolation structure 1506 may increase the electrical isolationbetween the sensor pixels 1510 a and 1510 b. In configuration 1500, theisolation structure extends from an upper surface of the substrate 1502and extends into a predetermined depth from the upper surface. In someimplementations, the isolation structure 1506 is a doped region that hasbeen doped with p-type dopants or n-type dopants. The doping of theisolation structure 1506 may create a bandgap offset-induced potentialenergy barrier that impedes a flow of current across the isolationstructure 1506 and improving electrical isolation between the pixels1510 a and 1510 b. In some implementations, the isolation structure 1506is a trench filled with a semiconductor material that is different fromthe substrate 1502. An interface between two different semiconductorsformed between the substrate 1502 and the isolation structure 1506 maycreate a bandgap offset-induced energy barrier that impedes a flow ofcurrent across the isolation structure 1506 and improving electricalisolation between the pixels 1510 a and 1510 b.

In some implementations, the isolation structure 1506 is a trench filledwith a dielectric or an insulator. The isolation structure 1506 filledwith a low conductivity dielectric or insulator may provide a region ofhigh electrical resistance between the sensors pixels 1510 a and 1510 b,impeding a flow of current across the isolation structure 1506 andimproving electrical isolation between the pixels 1510 a and 1510 b.

While a single isolation structure 1506 has been shown, in general,there may be multiple isolation structures 1506 arranged between eachneighboring pairs of sensor pixels 1510. For example, in a 2D array ofsensor pixels 1510, a single sensor pixel 1510 may be surrounded by fournearest-neighbor sensor pixels 1510. In such a case, the isolationstructure 1506 may be placed along the four nearest-neighbor interfaces.In some implementations, the isolation structure 1506 may be acontinuous structure that surround the sensor pixel 1510. The isolationstructure 1506 may be shared at the interfaces between the pixels 1510.

Referring to FIG. 15B, an example configuration 1520 is similar to theconfiguration 1500 of FIG. 15A, but differs in that the absorptionregions 1504 a and 1504 b are fully embedded in the substrate 1502.

Referring to FIG. 15C, an example configuration 1530 is similar to theconfiguration 1500 of FIG. 15A, but differs in that the isolationstructure 1506 extends from the upper surface of the substrate 1502 tothe lower surface of the substrate 1502 through the entire depth of thesubstrate 1502. Configuration 1530 may remove alternative conductionpaths between the sensor pixels 1510 that diverts the isolationstructure 1506, and may improve electrical isolation between the sensorpixels 1510.

Referring to FIG. 15D, an example configuration 1540 is similar to theconfiguration 1530 of FIG. 15C, but differs in that the absorptionregions 1504 a and 1504 b are fully embedded in the substrate 1502.

Referring to FIG. 15E, an example configuration 1550 includes thesubstrate 1502, the sensor pixels 1510 a and 1510 b (collectivelyreferred to as sensor pixels 1510), and isolation structures 1556 a and1556 b (collectively referred to as isolation structures 1556). Theisolation structures 1556 a and 1556 b is similar to the isolationstructure 1506 described in relation to FIG. 15A, but differs in thatthe isolation structures 1556 are arranged on a portion of the substrate1502 immediately below the respective absorption regions 1504. Sucharrangement of the isolation structures 1556 between the absorptionregion 1504 and the substrate 1502 may help confine the photo-generatedcarriers to the absorption region 1504 and help reduce the leakage ofthe photo-generated carriers into the substrate 1502. For example, thesensor pixels 1510 a and 1510 b may be implemented as the switchedphotodetector 530 of FIG. 5D, which has all the electrical terminalsplaced on the absorption region 1504. In such a case, the electricalisolation provided by the isolation structure 1556 (e.g., a thin p-dopedlayer) may improve photocurrent collection efficiency and/or bandwidthof the sensor pixels 1510.

Referring to FIG. 15F, an example configuration 1560 is similar to theconfiguration 1550 of FIG. 15E, but differs in that the absorptionregions 1504 a and 1504 b are fully embedded in the substrate 1502, andthe isolation structures 1556 partially or fully surrounds theabsorption regions 1504. For isolation structures 1556 that are formedfrom insulator or dielectric, the isolation structures 1556 may includean opening below the absorber and partially surround the embeddedabsorption regions 1504. For isolation structures 1556 that are dopedregions, the isolation structures 1556 may be a continuous structurethat fully surrounds the embedded absorption regions 1504 without theopening.

While isolation structures that are doped regions, dielectric material,or insulator have been described, in general, the isolation structuremay be a combination of such implementations. Referring to FIG. 15G, anexample configuration 1570 is similar to the configuration 1500 of FIG.15A, but differ in that the isolation structure 1506 includes a firstisolation structure 1576 and a second isolation structure 1577. Thefirst isolation structure 1576 may be a trench filled with asemiconductor material that is different from the substrate 1502 or atrench filled with a dielectric or an insulator. The second isolationstructure 1577 may be a doped region that has been doped with p-typedopants or n-type dopants. The isolation structure 1504 that implementsboth different materials and doped regions may further improveelectrical isolation between the sensor pixels 1510 over isolationstructures that implement one in isolation. In some implementations, adoping isolation may be used to form the second isolation structure 1577while a material isolation through trench fill may be used to form thefirst isolation structure 1576 in which the doping isolation isshallower than the material isolation.

Light detection efficiency of a photodetector, such as a switchedphotodetector, may be enhanced by addition of various structures thatmodify optical characteristics of the photodetector. For example,mirrors, dielectric layers, and anti-reflection coating (ARC) layers canbe added alone or in combination to achieve various effects includingincreased absorption of light by an absorption region, creation of anoptical resonance cavity, and/or alteration of the spectral response ofthe photodetector. FIGS. 16A-16J show cross-sectional views of exampleconfigurations for improving detection efficiency of a photodetector.Referring to FIG. 16A, an example configuration 1600 includes asubstrate 1602, an absorption region 1604, and a metal mirror 1606. Theabsorption region 1604 forms a photodetector. The metal mirror 1606reflects incident light.

An optical signal 1605 is incident on the absorption region 1604 fromthe top as shown, which may be referred to as a front-side illumination(FSI) configuration. In such configurations, in some cases, the opticalsignal 1605 may not be fully absorbed by the absorption region 1604, anda portion of the optical signal 1605 may pass through the absorptionregion 1604. Such light that passes through the absorption region 1604without being absorbed may reduce detection efficiency of thephotodetector. By placing the metal mirror 1606 on a lower surface ofthe substrate 1602 to reflect the passed-through portion of the opticalsignal 1605, the passed-through portion may be reflected back toward theabsorption region 1604 for a second pass through the absorption region1604, improving detection efficiency.

The portion of the optical signal 1605 that gets absorbed by theabsorption region 1604 may be a function of optical absorptioncoefficient of the absorption region 1604, the thickness of theabsorption region 1604 along the direction of light incidence (e.g.,along the vertical direction), and the wavelength of the optical signal1605.

The metal mirror 1606 may be formed from various optically reflectivemetals, such as copper, aluminum, gold, and platinum. The metal mirror1606 may have reflectivity greater than 50%, 60%, 70%, 80%, 90%, or 95%at the operation wavelength of the photodetector of the configuration1600. The thickness of the metal mirror 1606 may be greater than askin-depth of the metal. For example, the metal mirror 1606 may have athickness ranging from 50 nm to 500 nm.

Referring to FIG. 16B, an example configuration 1610 is similar to theconfiguration 1600 of FIG. 16A, but differs in that the exampleconfiguration 1610 further includes a dielectric layer 1608 arrangedbetween the substrate 1602 and the metal mirror 1606. The dielectriclayer 1608 may alter an optical reflection spectrum of the metal mirror1608. For example, by thin film interference caused by the dielectriclayer 1608 (e.g., a SiO2 layer), the reflection of the light incident onthe metal mirror 1606 (e.g., an Al layer) may be enhanced (e.g., areflectivity enhanced from <90% to >97%) at certain wavelengths anddecreased at some other wavelengths.

Referring to FIG. 16C, an example configuration 1620 is similar to theconfiguration 1600 of FIG. 16A, but differs in that the metal mirror1606 of configuration 1600 has been replaced with a dielectric mirror1626. The dielectric mirror may be a single layer of dielectric film ora stack of various dielectric films. The dielectric mirror 1626 may beformed from various dielectric materials, such as SiO2, Si3N4, SiON, andSi. The dielectric mirror 1626 may have reflectivity greater than 50%,60%, 70%, 80%, 90%, or 95% at the operation wavelength of thephotodetector of the configuration 1620. The thickness of the dielectricmirror 1626 may have a thickness ranging from 50 nm to 4000 nm.

Referring to FIG. 16D, an example configuration 1630 is similar to theconfiguration 1620 of FIG. 16C, but differs in that the dielectricmirror 1626 of configuration 1620 has been replaced with a DistributedBragg Reflector (DBR) mirror 1632. The DBR mirror includes multiplefirst dielectric layers 1634 and multiple second dielectric layers 1636that are stacked on top of each other in an alternating fashion. Thesecond dielectric layers 1636 have an index of refraction that isdifferent from that of the first dielectric layers 1634. The firstlayers 1634 and the second layers 1636 may have a thickness thatcorresponds to a quarter of the operation wavelength in the respectivedielectric materials. The reflectivity and the reflection bandwidth maydepend on the thicknesses, the refractive indices of the first layers1634 and the second layers 1636, and the number of first-second layerpairs.

Referring to FIG. 16E, an example configuration 1640 includes thesubstrate 1602, the absorption region 1604, and an anti-reflectioncoating (ARC) layer 1648. The ARC layer 1648 may reduce a reflection ofthe optical signal 1605 incident on the absorption region 1604. The ARClayer 1648 may be similar to ARC layer 744 of FIG. 7B.

Referring to FIG. 16F, an example configuration 1650 is similar to theconfiguration 1600 of FIG. 16A, but differs in that the metal mirror1606 is now placed on the upper surface of the substrate 1602, on theside of the absorption region 1604. The optical signal 1605 is nowincident on the absorption region 1604 through the lower surface of thesubstrate 1602, which may be referred to as a back-side illumination(BSI) configuration. The effect of the metal mirror 1606 is analogous tothe descriptions in relation to FIG. 16A.

Referring to FIG. 16G, an example configuration 1660 is similar to theconfiguration 1610 of FIG. 16B, but differs in that the dielectric layer1608 and the metal mirror 1606 are now placed on the upper surface ofthe substrate 1602, on the side of the absorption region 1604. Theoptical signal 1605 is now incident on the absorption region 1604through the lower surface of the substrate 1602, which may be referredto as a back-side illumination (BSI) configuration. The effect of thedielectric layer 1608 and the metal mirror 1606 is analogous to thedescriptions in relation to FIG. 16B.

Referring to FIG. 16H, an example configuration 1670 is similar to theconfiguration 1620 of FIG. 16C, but differs in that the dielectricmirror 1626 is now placed on the upper surface of the substrate 1602, onthe side of the absorption region 1604. The optical signal 1605 is nowincident on the absorption region 1604 through the lower surface of thesubstrate 1602, which may be referred to as a back-side illumination(BSI) configuration. The effect of the dielectric mirror 1626 isanalogous to the descriptions in relation to FIG. 16C.

Referring to FIG. 16I, an example configuration 1680 is similar to theconfiguration 1630 of FIG. 16D, but differs in that the DBR mirror 1632is now placed on the upper surface of the substrate 1602, on the side ofthe absorption region 1604. The optical signal 1605 is now incident onthe absorption region 1604 through the lower surface of the substrate1602, which may be referred to as a back-side illumination (BSI)configuration. The effect of the DBR mirror 1632 is analogous to thedescriptions in relation to FIG. 16D.

Referring to FIG. 16J, an example configuration 1690 is similar to theconfiguration 1640 of FIG. 16E, but differs in that the ARC layer 1648is now placed on the lower surface of the substrate 1602, on the side ofthe substrate 1602 opposite to the absorption region 1604. The opticalsignal 1605 is now incident on the absorption region 1604 through thelower surface of the substrate 1602, which may be referred to as aback-side illumination (BSI) configuration. The effect of the ARC layer1648 is analogous to the descriptions in relation to FIG. 16E.

In general, the mirror structures, such as metal mirror 1606, thedielectric layer 1608, the dielectric mirror 1626, and the DBR mirror1632 may be fabricated in various ways. For example, the mirrorstructures may be deposited directly onto the substrate 1602.Alternatively, or additionally, the mirror structures may be fabricatedon a separate substrate and bonded to the substrate 1602 through waferbonding techniques.

While individual implementations having metal mirror 1606, thedielectric layer 1608, the dielectric mirror 1626, and the DBR mirror1632 on the lower surface or the upper surface of the substrate 1602 areshown, in general, the described structures may be implemented on bothsides of the substrate 1602. For example, the DBR mirror 1632 may beimplemented on both sides of the substrate 1602, which may create anoptical resonance cavity around the absorption region 1604, modifyingthe spectral response of the photodetector. As another example, the ARClayer 1648 may be implemented on the upper surface of the substrate 1602in combination with a mirror structure on the lower surface of thesubstrate 1602 (e.g., configurations 1600, 1610, 1620, and 1630) tofurther enhance detection efficiency of the photodetector. In general,mirrors such as the metal mirror 1606, the dielectric layer 1608, thedielectric mirror 1626, and the DBR mirror 1632 may be partiallyreflecting and partially transmitting.

Surface of the absorption regions may be modified in various ways tomodify various performance characteristics of a photodetector. Examplesof modification of the surface of the absorption regions include:addition of doping regions; introduction of foreign elements; variationof material composition; introduction of topographies onto the surfaceof the absorption region; and deposition of dielectric or semiconductormaterials. Examples of performance characteristics include: lightabsorption efficiency; optical absorption spectrum; carrier collectionefficiency; dark current or leakage current; photodetector operationpower; and photodetector bandwidth.

FIGS. 17A-17E show cross-sectional views of example configurations ofabsorption region surface modification. Referring to FIG. 17A, asurface-modified absorption region 1700 includes a germanium-siliconbased absorption region 1704 and a surface modification layer 1706. Thegermanium-silicon based absorption region 1704 may be an absorptionregion of a switched photodetector such as the switched photodetector530 of FIG. 5D.

The GeSi-based absorption region 1704 may be a SixGe1−x compound withvarying composition (X). For example, the composition (X) may vary from0.01, at which point the GeSi-based absorption region 1704 may have acharacteristic closer to Ge, to 0.99, at which point the GeSi-basedabsorption region 1704 may be have a characteristic closer to Si. Thecomposition of the GeSi-based absorption region may affect the opticalabsorption efficiency for a given wavelength, and also affect theoverall optical absorption spectrum. For example, a composition with alower (X), corresponding to higher Ge concentration, may absorb morestrongly in the near infrared wavelengths (e.g., >1 μm) compared to acomposition with a higher (X), corresponding to a higher Si composition.

The surface modification layer 1706 may modify the optical and/orelectrical properties of the GeSi-based absorption region 1704 and thephotodetector including the absorption region 1704. The surfacemodification layer may be formed from various materials, such asamorphous silicon, polysilicon, epitaxial silicon, SiYGe1−Y compoundwith varying composition (Y), GeZSn1−Z compound with varying composition(Z), and any combination thereof.

In some implementations, for a GeSi-based absorption region 1704 havinga SixGe1−x composition, the surface modification layer 1706 may be aSiYGe1−Y layer where the compositions (X) and (Y) are different. Forexample, by having a composition (X) that is larger than composition(Y), the surface modification layer 1706 may have a higher absorptioncoefficient at a longer wavelength than the GeSi-based absorption region1704. As such, incident light at a longer wavelength may be stronglyabsorbed by the surface modification layer 1706 without penetrating deepinto the GeSi-based absorption region 1704. By absorbing the incidentlight closer to the surface of the GeSi-based absorption region 1704,bandwidth of the photodetector including the absorption region 1704 mayimprove due to reduced diffusion of the photo-generated carriers withinthe absorption region 1704. In some implementations, for a puregermanium absorption region 1704 (i.e., X=0), the surface modificationlayer 1706 may be a SiYGe1−Y layer. In some implementations, thecomposition of the surface modification layer 1706 and the GeSi-basedabsorption region 1704 may vary along a direction, such as the verticaldirection, forming a graded GeSi absorption region 1704. The grading ofthe GeSi composition may further improve bandwidth of the photodetector.In some implementations, the surface modification layer 1706 may bemulti-layered. For example, a GeSi layer may be deposited on top of aGeSi-based absorption region 1704 for passivation, and another Si layermay be deposited on top of the GeSi layer for further passivation.

In some implementations, the surface modification layer 1706 may be aGermanium-Tin alloy GeZSn1−Z with varying composition (Z). The additionof Tin to the surface modification layer 1706 may improve opticalabsorption efficiency at longer wavelengths, such as beyond the bandgapof germanium (approximately 1.55 μm), beyond which point the absorptionefficiency of pure germanium decreases significantly.

Referring to FIG. 17B, a surface-modified absorption region 1710includes the germanium-silicon based absorption region 1704 and firstdoped region 1712. In some implementations, the first doped region 1712may be doped with p-type or n-type dopants. P-type or n-type dopants maymodify the electrical properties of the absorption region 1704. Forexample, the photo-generated electrons (or holes) may be repelled awayfrom the surface due to the first doped region 1712, thereby avoidingsurface recombination, which results into a higher collection efficiencywhen first doped region 1712 is doped with p-type (or n-type) dopants.In some implementations, the first doped region 1712 may be doped withimpurities that modifies the optical property of the absorption region1704, such as silicon and tin.

Referring to FIG. 17C, a surface-modified absorption region 1720 issimilar to the surface-modified absorption region 1710, but differs inthat it further includes a second doped region 1722. The second dopedregion 1722 may be similar to the first doped region 1712 or may have adifferent polarity, depth, and width such that the photo-generatedcarriers are attracted by the second doped region 1722 and repelled bythe first doped region 1712.

Referring to FIG. 17D, a surface-modified absorption region 1730includes the germanium-silicon based absorption region 1704 anddielectric wells 1732. The dielectric wells 1732 may be filled withvarious dielectric materials, such as SiO2, Si3N4, and high-k material.The dielectric well may contribute to reduction of dark current orleakage current, reduction of photodetector operation power, and/orimprovement of photodetector bandwidth, when it is placed, for example,inside a PN junction or in-between surface electrical terminals.

Referring to FIG. 17E, a switched photodetector 1740 includes a surfacemodified Ge-absorption region 1710 of FIG. 17B. The switchedphotodetector 1740 is similar to the switched photodetector 160 of FIG.1B, but differs in that it further includes the surface modificationlayer 1706, and the carrier collection terminals 1106 and carriercontrol terminals 1108 of FIG. 11A. The addition of the surfacemodification layer 1706 may contribute to improvements in variousperformance characteristics of the switched photodetector 1740, such as:light absorption efficiency; optical absorption spectrum; carriercollection efficiency; dark current or leakage current; photodetectoroperation power; and photodetector bandwidth.

While individual implementations of surface modification of theabsorption region are shown, in general, the described surfacemodification can be implemented in various combinations to achievedesired effects. For example, the surface modification layer 1706 may beimplemented in combination with the first doped region 1712 and/or thesecond doped region 1722. As another example, the surface modificationlayer 1706 may be implemented in combination with the dielectric wells1732. As yet another example, the surface modification layer 1706 may beimplemented in combination with the first doped region 1712 and/or thesecond doped region 1722, and the dielectric wells 1732.

Various doped regions and wells, such as p-doped regions and wells, andn-doped regions and wells, may be arranged in various locations of theabsorption region, the substrate, or intermediate layers to modifydevice performance characteristics. Examples of performancecharacteristics include: light absorption efficiency; optical absorptionspectrum; carrier collection efficiency; dark current or leakagecurrent; photodetector operation power; and photodetector bandwidth.

The depth of the doping regions and wells may be determined based on avariety of considerations, such as manufacturability and deviceperformance. One or more doping wells and regions may be connected to avoltage or current sources. One or more doping wells and regions may notbe connected to a voltage or current sources (i.e., floating), and/or beconnected to each other (i.e., shorted).

FIGS. 18A-18B show top and side views of an example switchedphotodetector 1800. The switched photodetector 1800 is similar to theswitched photodetector 160 of FIG. 1B, and further includes the carriercollection terminals 1106 and carrier control terminals 1108 of FIG.11A. As previous described in relation to FIG. 1B, the n-well regions152 and 154 may reduce a leakage current from the first control signal122 to the second control signal 132, and may reduce a charge couplingbetween the n-doped regions 126 and 136. Reduction of the leakagecurrent contributes to reduction of operation power of the switchedphotodetector 1800.

FIGS. 18C-18D show top and side views of an example switchedphotodetector 1820. The switched photodetector 1800 is similar to theswitched photodetector 1800 of FIGS. 18A-18B, and further includesp-well regions 1822. The p-well regions 1822 may be similar to thep-well regions 246 and 248 of FIG. 2D. The p-well regions 1822 mayincrease the collection efficiency of photo-generated electrons of theswitched photodetector 1820 relative to the switched photodetector 1800.

In some cases, the photo-generated carriers in the absorption region 106may not be completely collected by the n-doped regions 126 and 136. Insuch cases, the photo-generated carriers may reach the materialinterface between the substrate 102 and the absorption region 106, wherematerial defects may be present. The material defects may capture thephoto-generated carriers and release the carriers after some period oftime, which may be collected by n-doped regions 126 and 136. Suchcapture and release of the carriers by the material defects at theinterface and subsequent collection by the n-doped regions 126 and 136may reduce the bandwidth of the switched photodetector 1800 due to thetime delay caused by the capturing and releasing of the carriers. Assuch, such bandwidth-reduction may be mitigated by adding the p-wellregions 1822, which may block photo-generated carriers not collected bythe n-doped regions 126 and 136 from reaching the interface between theabsorption region 106 and the substrate 102.

FIG. 18E shows a top view of an example switched photodetector 1830. Theswitched photodetector 1830 is similar to the switched photodetector1820 of FIGS. 18C-18D, and further includes p-well regions 1832. Thep-well regions 1832 are similar to the p-well regions 1822. Thecombination of p-well regions 1822 and 1832 surrounds the respectiven-doped regions 126 and 136, which may further block photo-generatedcarriers not collected by the n-doped regions 126 and 136 from reachingthe interface between the absorption region 106 and the substrate 102.While shown as separate p-well regions 1822 and 1832, the p-well regions1822 and 1832 may be joined into respective “C” shaped region thatsurrounds the respective n-doped regions 126 and 136.

FIGS. 18F-18G show top and side views of an example switchedphotodetector 1840. The switched photodetector 1840 is similar to theswitched photodetector 1800 of FIGS. 18A-18B, but differs in that itomits the n-well regions 152 and 154, and includes p-well region 1842.The p-well region 1842 may be similar to the p-well regions 246 and 248of FIG. 2D. The p-well region 1842 surrounds the absorption region 106embedded within the substrate 102. The p-well region 1842 may blockphoto-generated electrons in the absorption region 106 from reaching thesubstrate 102. Such blocking may increase the collection efficiency ofphoto-generated carriers of the switched photodetector 1840 relative tothe switched photodetector 1800. The p-well region 1842 may be formed inthe absorption region 106, the substrate 102, an intermediate layerbetween the absorption region 106 and the substrate 102, or combinationthereof.

While individual implementations of n-well regions 152 and 154 andp-well regions 1822, 1832, and 1842 have been shown, in general, thedescribed n-well and p-well regions can be implemented in variouscombinations to achieve desired effects.

So far, various implementations of the elements of the switchedphotodetectors, and various arrangements of the elements have beendescribed. Now, various exemplary combinations of the previouslydescribed elements and their arrangements will be described. Thedescribed combinations are not intended to be a complete list of allcombination.

FIGS. 19A-B show top and side views of an example switched photodetector1900. The switched photodetector 1900 is similar to the switchedphotodetector 100 of FIG. 1A, but differs in that the absorption region106 of the photodetector 1900 is fully embedded in the substrate 102,and further includes the carrier collection terminals 1106 and carriercontrol terminals 1108 of FIG. 11A. The light receiving region 1205 isdescribed in relation to FIGS. 12A-12B. The presence of the p-dopedregions 128 and 138 results in formation of an Ohmic contact at theinterfaces between the carrier control terminal 1108 and the absorptionregion 106.

FIGS. 19C-D show top and side views of an example switched photodetector1910. The switched photodetector 1910 is similar to the switchedphotodetector 1900 of FIG. 19A-B, but differs in that the p-dopedregions 128 and 138 have been omitted. The omission of the p-dopedregions 128 and 138 results in formation of a Schottky junction at theinterfaces between the carrier control terminal 1108 and the absorptionregion 106.

FIGS. 19E-F show top and side views of an example switched photodetector1920. The switched photodetector 1910 is similar to the switchedphotodetector 1900 of FIG. 19A-B, but differs in that additional p-dopedregions 128 and 138, and carrier control terminals 1108 have been addedon each sides of the light receiving region 1205.

FIGS. 19G-H show top and side views of an example switched photodetector1930. The switched photodetector 1930 is similar to the switchedphotodetector 1920 of FIG. 19E-F, but differs in that the p-dopedregions 128 and 138 have been omitted. The omission of the p-dopedregions 128 and 138 results in formation of a Schottky junction at theinterfaces between the carrier control terminal 1108 and the absorptionregion 106.

FIGS. 20A-B show top and side views of an example switched photodetector2000. The switched photodetector 2000 is similar to the switchedphotodetector 1900 of FIG. 19A-B, but differs in that the intermediatelayer 1006 of FIG. 10I has been added. As previously described inrelation to FIG. 10I, the intermediate layer 1006 has an opening to thesubstrate 102, and the absorption region 106 fills the opening to thesubstrate 102 and the opening formed by the intermediate layer 1006. Insome implementations, the intermediate layer 1006 may be SiO2, SiNx,AlOx, or any oxide or nitride-based insulators.

FIGS. 20C-D show top and side views of an example switched photodetector2010. The switched photodetector 2010 is similar to the switchedphotodetector 2000 of FIG. 19A-B, but differs in that the intermediatelayer 1006 of FIGS. 20A-B has been replaced with an intermediate layer2012. The intermediate layer 2012 is similar to the intermediate layer1006 in its material, but differs in that intermediate layer 2012 is auniform layer that extends across the upper surface of the substrate102, with openings to the substrate 102. The absorption region 106 isembedded in the opening of the intermediate layer 2012. In someimplementations, the intermediate layer 2012 may be SiO2, SiNx, AlOx, orany oxide or nitride-based insulators.

FIGS. 20E-F show top and side views of an example switched photodetector2020. The switched photodetector 2020 is similar to the switchedphotodetector 2010 of FIGS. 20C-D, but differs in that the p-dopedregions 128 and 138 have been omitted. The omission of the p-dopedregions 128 and 138 results in formation of a Schottky junction at theinterfaces between the carrier control terminal 1108 and the absorptionregion 106.

FIGS. 20G-H show top and side views of an example switched photodetector2030. The switched photodetector 2030 is similar to the switchedphotodetector 2010 of FIGS. 20C-D, but differs in that the intermediatelayer 2012 of FIGS. 20C-D has been replaced with an intermediate layer2032. The intermediate layer 2032 is similar to the intermediate layer2012 of FIGS. 20C-D, but differs in that the intermediate layer 2032 hasa first opening 2034 to the substrate 102, and a second opening 2036that is larger than the first opening 2034 that opens up toward theupper surface of the intermediate layer 2032.

FIGS. 20I-J show top and side views of an example switched photodetector2040. The switched photodetector 2040 is similar to the switchedphotodetector 2030 of FIGS. 20G-H, but differs in that the p-dopedregions 128 and 138 have been omitted. The omission of the p-dopedregions 128 and 138 results in formation of a Schottky junction at theinterfaces between the carrier control terminal 1108 and the absorptionregion 106.

FIGS. 20K-L show top and side views of an example switched photodetector2050. The switched photodetector 2050 is similar to the switchedphotodetector 2030 of FIGS. 20G-H, but differs in that the n-wellregions 152 and 154 have been added. The n-well regions 152 and 154 havebeen described in relation to FIG. 1B.

FIGS. 21A-B show top and side views of an example switched photodetector2100. The switched photodetector 2100 is similar to the switchedphotodetector 1900 of FIGS. 19A-B, but differs in that the n-dopedregions 126 and 136, the p-doped regions 128 and 138, the carriercollection terminals 1106, and the carrier control terminals 1108 havebeen moved from the absorption region 106 to the substrate 102. Suchterminals 1106 and 1108 may be referred to as substrate carriercollection terminals and substrate carrier control terminals.

FIGS. 21C-D show top and side views of an example switched photodetector2110. The switched photodetector 2110 is similar to the switchedphotodetector 2100 of FIGS. 21A-B, but differs in that absorber p-dopedregions 2128 and 2138, and absorber carrier control terminals 2108 havebeen placed on the absorption region 106. The substrate carriercollection terminals 1106, the substrate carrier control terminals 1108,and the absorber carrier control terminals 2108 may be similar to thesubstrate carrier collection terminal 1306, the substrate carriercontrol terminal 1308, and the absorber carrier control terminal 1309described in relation to FIG. 14A, and have similar effects.

FIGS. 21E-F show top and side views of an example switched photodetector2120. The switched photodetector 2120 is similar to the switchedphotodetector 2110 of FIGS. 21C-D, but differs in that the absorberp-doped regions 2128 and 2138 have been omitted. The omission of theabsorber p-doped regions 2128 and 2138 results in formation of aSchottky junction at the interfaces between the absorber carrier controlterminal 2108 and the absorption region 106.

FIGS. 22A-B show top and side views of an example switched photodetector2200. The switched photodetector 2200 is similar to the switchedphotodetector 1840 of FIGS. 18F-G, but differs in that the n-wellregions 152 and 154 of FIGS. 18A-B have been added.

FIGS. 22C-D show top and side views of an example switched photodetector2210. The switched photodetector 2210 is similar to the switchedphotodetector 2110 of FIGS. 21C-D, but differs in that the n-wellregions 152 and 154 of FIGS. 18A-B have been added.

FIG. 23A show a top view of an example switched photodetector 2300, andFIG. 23B shows a side view of the example switched photodetector 2300along a line AA. The switched photodetector 2300 is similar to theswitched photodetector 2110 of FIGS. 21C-D, but differs in that thep-well regions 2302 have been added at the interface between theabsorption region 106 and the substrate 102. The p-well regions 2302 mayhelp mitigate carrier trapping and releasing at the interface betweenthe absorption region 106 and the substrate 102, which has beendescribed in relation to FIG. 18C-D.

FIGS. 24A-B show top and side views of an example switched photodetector2400. The switched photodetector 2400 is similar to the switchedphotodetector 1820 of FIGS. 18C-D, but differs in that the n-wellregions 152 and 154 of have been omitted.

FIG. 24C shows a top view of an example switched photodetector 2410. Theswitched photodetector 2410 is similar to the switched photodetector1830 of FIG. 18E, but differs in that the p-well regions 1822 and 1832of FIG. 18E have been merged into continuous p-well regions 2412.

FIGS. 24D-E show top and side views of an example switched photodetector2420. The switched photodetector 2420 is similar to the switchedphotodetector 2400 of FIGS. 24A-B, but differs in that dielectric wells2422 have been added in the n-doped regions 126 and 136. The dielectricwells 2422 is similar to the dielectric wells 1732 of FIG. 17D. Thedielectric well 2422 are arranged in a portion of the n-doped region 126between carrier collection terminal 1106 and the carrier controlterminal 1108. The dielectric well 2422 may reduce a dark currentbetween the carrier collection terminal 1106 and the carrier controlterminal 1108. The depth of the dielectric well 2422 may be less than,equal to, or greater than the depth of the n-doped region 126.

FIGS. 24F-G show top and side views of an example switched photodetector2430. The switched photodetector 2430 is similar to the switchedphotodetector 2420 of FIGS. 24D-E, but differs in that dielectric wells2422 have been moved from the n-doped regions 126 and 136 to the p-dopedregions 128 and 138. The depth of the dielectric well 2422 may be lessthan, equal to, or greater than the depth of the p-doped region 128. Ingeneral, the dielectric well 2422 may be placed anywhere in between then-doped region 126 and the p-doped region 128, and between the n-dopedregion 136 and the p-doped region 138.

FIGS. 25A-B show top and side views of an example switched photodetector2500. The switched photodetector 2500 is similar to the switchedphotodetector 1900 of FIGS. 19A-B, but differs in that the metal mirror1606 of FIG. 16F has been added as a metal mirror 2502 on an uppersurface of the absorption region 106, the surface on which the carriercollection terminals 1106 and carrier control terminals 1108 arelocated. The metal mirror 2502 may be placed above the light receivingregion 1205. In some implementations, the metal mirror 2502 may beimplemented by the first metal layer (M1) or the second metal layer (M2)process in CMOS fabrication or a combination of thereof.

FIGS. 25C-D show top and side views of an example switched photodetector2510. The switched photodetector 2510 is similar to the switchedphotodetector 2500 of FIGS. 25A-B, but differs in that the p-dopedregions 128 and 138 have been omitted. The omission of the p-dopedregions 128 and 138 results in formation of a Schottky junction at theinterfaces between the carrier control terminal 1108 and the absorptionregion 106.

FIGS. 25E-F show top and side views of an example switched photodetector2520. The switched photodetector 2520 is similar to the switchedphotodetector 2050 of FIGS. 20K-L, but differs in that the metal mirror1606 of FIG. 16F has been added as a metal mirror 2502 on an uppersurface of the absorption region 106, the surface on which the carriercollection terminals 1106 and carrier control terminals 1108 arelocated. The metal mirror 2502 may be placed above the light receivingregion 1205. In some implementations, the metal mirror 2502 may beimplemented by the first metal layer (M1) or the second metal layer (M2)process in CMOS fabrication or a combination of thereof.

FIGS. 25G-H show top and side views of an example switched photodetector2530. The switched photodetector 2530 is similar to the switchedphotodetector 1840 of FIGS. 18F-G, but differs in that the metal mirror1606 of FIG. 16F has been added as a metal mirror 2502 on an uppersurface of the absorption region 106, the surface on which the carriercollection terminals 1106 and carrier control terminals 1108 arelocated. The metal mirror 2502 may be placed above the light receivingregion 1205. In some implementations, the metal mirror 2502 may beimplemented by the first metal layer (M1) or the second metal layer (M2)process in CMOS fabrication or a combination of thereof.

In typical implementations of an image sensor, multiple sensor pixels(e.g., switched photodetectors) are arranged in an array to allow theimage sensor to capture images having multiple image pixels.Square-shaped sensor pixels having equal dimensions on the two sideswhen seen from the top allows for simple 2D array. However, for certainapplications such as ToF, some sensor pixels may have non-square shapes,such as a rectangular shape. For example, referring back to FIG. 1B, theswitched photodetector 160 has two carrier control terminals (e.g.,p-doped regions 128 and 138) and two carrier collection terminals (e.g.,n-doped regions 126 and 136). These four terminals are typicallyarranged along a line, which leads to a rectangular sensor pixel shapethat is longer along the line on which the terminals line up (e.g.,switched photodetector 1800 of FIG. 18A).

Such rectangular sensor pixels may present challenges in efficientarraying of the pixels due to, for example, design rules associated withsemiconductor fabrication in a foundry. Design rules may impose variousminimum separations of features such as doped regions, doped wells,dielectric wells, and germanium absorption regions. One approach toimproving compactness and symmetry is by creating a unit cell ofphotodetectors that include four rectangular photodetectors. FIG. 26show an example unit cell of rectangular photodetectors. A unit cell2600 includes four switched photodetectors 1800 of FIG. 18A and fourisolation structures 2602 that surround each of the switchedphotodetectors 1800. The isolation structures 2602 have been describedin relation to FIGS. 15A-D. The unit cell 2600 may improve sensor pixelcompactness and symmetry over the rectangular unit cell.

FIG. 27 shows a top view of an example rectangular switchedphotodetector 2700 with photo-transistor gain. The switchedphotodetector 2700 is similar to the switched photodetector 1800 of FIG.18A, but differs in that electron emitters 2710 have been added on tothe substrate 102. The electron emitter 2710 may be similar to then-doped regions 126 and 136. The rectangular shape of the switchedphotodetector 1800 allows coupling of a photocurrent integrationcapacitor (e.g., a floating diffusion capacitor) to a bipolar junctiontransistor (BJT) 2720 formed by the n-doped regions 126 and 136, thep-doped regions 128 and 138, and the electron emitter 2710, resulting inan NPN BJT. The BJT 2720, when biased appropriately, may provide aphoto-transistor gain in response to incident optical signal, which mayimprove a light to photocurrent conversion efficiency of thephotodetector 2700. For example, the BJT 2720 may be biased as follows:bias the n-doped regions 126 and 136 between 1V and 3V, bias the p-dopedregions 128 and 138 between 0V and 1V, and bias the electron emitter2710 to be lower than the bias of the respective n-doped regions 126 and136.

In general, the electron emitter 2710 and/or the n-doped regions 126 and136 should be biased to an external voltage or be shorted with a p-dopedregion through a metal connection to allow electrons to be emitted bythe electron emitter 2710.

While various implementations of switched photodetectors with aparticular combination and arrangement of n-type and p-type regions andwells have been described, in general, the polarity of the doped regionsand wells may be reversed and achieve analogous operation andfunctionality. For example, all instances of a p-well and p-dopedregions may be converted to n-well and n-doped regions, respectively,and all instance of n-well and n-doped regions may be converted top-well and p-doped regions, receptively.

FIG. 28A shows an example imaging system 2800 for determiningcharacteristics of a target object 2810. The target object 2810 may be athree-dimensional object. The imaging system 2800 may include atransmitter unit 2802, a receiver unit 2804, and a processing unit 2806.In general, the transmitter unit 2802 emits light 2812 towards thetarget object 2810. The transmitter unit 2802 may include one or morelight sources, control circuitry, and/or optical elements. For example,the transmitter unit 2802 may include one or more NIR LEDs or lasers,where the emitted light 2812 may be collimated by a collimating lens topropagate in free space.

In general, the receiver unit 2804 receives the reflected light 2814that is reflected from the target object 2810. The receiver unit 2804may include one or more photodetectors, control circuitry, and/oroptical elements. For example, the receiver unit 2804 may include animage sensor, where the image sensor includes multiple pixels fabricatedon a semiconductor substrate. Each pixel may include one or moreswitched photodetectors for detecting the reflected light 2814, wherethe reflected light 2814 may be focused to the switched photodetectors.Each switched photodetector may be a switched photodetector disclosed inthis application.

In general, the processing unit 2806 processes the photo-carriersgenerated by the receiver unit 2804 and determines characteristics ofthe target object 2810. The processing unit 2806 may include controlcircuitry, one or more processors, and/or computer storage medium thatmay store instructions for determining the characteristics of the targetobject 2810. For example, the processing unit 2806 may include readoutcircuits and processors that can process information associated with thecollected photo-carriers to determine the characteristics of the targetobject 2810. In some implementations, the characteristics of the targetobject 2810 may be depth information of the target object 2810. In someimplementations, the characteristics of the target object 2810 may bematerial compositions of the target object 2810.

FIG. 28B shows one example technique for determining characteristics ofthe target object 2810. The transmitter unit 2802 may emit light pulses2812 modulated at a frequency fm with a duty cycle of 50%. The receiverunit 2804 may receive reflected light pulses 2814 having a phase shiftof Φ. The switched photodetectors are controlled such that the readoutcircuit 1 reads the collected charges Q1 in a phase synchronized withthe emitted light pulses, and the readout circuit 2 reads the collectedcharges Q2 in an opposite phase with the emitted light pulses. In someimplementations, the distance, D, between the imaging system 2800 andthe target object 2810 may be derived using the equation

$\begin{matrix}{{D = {\frac{c}{4f_{m}}\frac{Q_{2}}{Q_{1} + Q_{2}}}},} & (1)\end{matrix}$

where c is the speed of light.

FIG. 28C shows another example technique for determining characteristicsof the target object 2810. The transmitter unit 2802 may emit lightpulses 2812 modulated at a frequency fm with a duty cycle of less than50%. By reducing the duty cycle of the optical pulses by a factor of N,but increasing the intensity of the optical pulses by a factor of N atthe same time, the signal-to-noise ratio of the received reflected lightpulses 2814 may be improved while maintaining substantially the samepower consumption for the imaging system 2800. This is made possiblewhen the device bandwidth is increased so that the duty cycle of theoptical pulses can be decreased without distorting the pulse shape. Thereceiver unit 2804 may receive reflected light pulses 2814 having aphase shift of Φ. The multi-gate photodetectors are controlled such thata readout circuit 1 reads the collected charges Q1′ in a phasesynchronized with the emitted light pulses, and a readout circuit 2reads the collected charges Q2′ in a delayed phase with the emittedlight pulses. In some implementations, the distance, D, between theimaging system 2800 and the target object 2810 may be derived using theequation

$\begin{matrix}{D = {\frac{c}{4Nf_{m}}{\frac{Q_{2}^{\prime}}{Q_{1}^{\prime} + Q_{2}^{\prime}}.}}} & (2)\end{matrix}$

FIG. 29 shows an example of a flow diagram 2900 for determiningcharacteristics of an object using an imaging system. The process 2900may be performed by a system such as the imaging system 2800.

The system receives reflected light (2902). For example, the transmitterunit 2802 may emit NIR light pulses 2812 towards the target object 2810.The receiver unit 2804 may receive the reflected NIR light pulses 2814that is reflected from the target object 2810.

The system determines phase information (2904). For example, thereceiver unit 2804 may include an image sensor, where the image sensorincludes multiple pixels fabricated on a semiconductor substrate. Eachpixel may include one or more switched photodetectors for detecting thereflected light pulses 2814. The type of switched photodetectors may bea switched photodetector disclosed in this application, where the phaseinformation may be determined using techniques described in reference toFIG. 28B or FIG. 28C.

The system determines object characteristics (2906). For example, theprocessing unit 2806 may determine depth information of the object 2810based on the phase information using techniques described in referenceto FIG. 28B or FIG. 28C.

In some implementations, an image sensor includes multiple pixels arefabricated on a semiconductor substrate, where each pixel may includeone or more switched photodetectors 100, 160, 170, 180, 200, 250, 260,270, 300, 360, 370, 380, 400, 450, 460, 470, and 480 for detecting thereflected light as illustrated in FIGS. 28A and 28B. The isolationbetween these pixels may be implemented based on an insulator isolationsuch as using an oxide or nitride layer, or based on an implantisolation such as using p-type or n-type region to block signalelectrons or holes, or based on an intrinsic built-in energy barriersuch as a using the germanium-silicon heterojunction interface.

Up to this point, various implementations of switched photodetectors,and how switched photodetectors can be used in a time-of-flight (ToF)detection system such as the imaging system 2800 of FIG. 28A have beendescribed. The receiver unit 2804 of the imaging system 2800 will now bedescribed in more detail. FIG. 30 shows a block diagram of an examplereceiver unit 3000 for ToF detection. The receiver unit 3000 includes apixel array 3010, amplifier array 3020, and analog-to-digital converter(ADC) array 3030. The pixel array 3010 is electrically coupled with theamplifier array 3020, which is electrically coupled with the ADC array3030.

The pixel array 3010 include multiple photodetectors, such as thepreviously described switched photodetectors, and capacitors for storingthe photo-generated carriers from the switched photodetectors. The pixelarray 3010 is a two-dimensional array of photodetectors and capacitors,including M rows and N columns (i.e., an M×N array). The capacitors maybe integrated with the photodetectors or be implemented separately.Examples of the capacitors include floating-diffusion capacitors,metal-oxide-metal (MOM) capacitors, and metal-insulator-metal (MIM)capacitors. The pixel array 3010 may further include pixel transistorsfor controlling the operation of the photodetectors, such as controllingcharge readout of switched photodetectors. The pixel array 3010 may bepart of an image sensor that include various optical componentsassociated with detection of light, such as reflectors, lenses, andanti-reflection coating layers.

The amplifier array 3020 includes one or more amplifiers 3022. TheAmplifiers 3022 amplify the electrical signals generated by theindividual pixels of the pixel array 3010. The amplifier 3022 may be avoltage-gain amplifier, which amplifies a voltage established byintegration of photocurrent on the capacitors. The amplifier 3022 may bea charge-to-voltage amplifier that converts the charge stored on thecapacitors into a voltage output. The amplifier 3022 may be a variablegain amplifier, which can be used in optimizing detection sensitivityover a range of optical signal magnitude received by the pixel array3010. The amplifier 3022 may be a differential amplifier that, forexample, amplifies a difference in voltage between the two outputs of aswitched photodetector. Such differential detection scheme may provideimproved ToF detection sensitivity.

Various implementations of the amplifier array 3020 may have differentnumber of amplifiers 3022. In some implementations, each pixel of thepixel array 3010 is coupled with a dedicated amplifier 3022. Suchconfiguration may allow simultaneous readout of all pixels, resulting inhighest image data acquisition rate. In some implementations, each rowor column of the pixel array shares a single amplifier 3022. Forexample, for an M×N pixel array 3010, there may be M or N amplifiers3022. Such a shared configuration may improve scalability of thereceiver unit 3000 to a large number of pixels (e.g., millions ofpixels). In some implementations, each row or column may be furtherdivided into subsections with amplifiers 3022 shared within thesubsections. In some implementations, for a small pixel array 3010, asingle amplifier 3022 may be shared among all pixels of the array. Ingeneral, a block of pixels from multiple rows and columns may begrouped, and blocks of pixels may share a single amplifier 3022. Forexample, for an M×N pixel array 3010, there may be K×L amplifiers 3022in which K M and L N.

The ADC array 3030 includes one or more ADCs. The ADCs convert theanalog voltage or current signals output by the amplifiers 3022 intodigital outputs 3040 having N bits. The digital outputs 3040, forexample, may be received by the processing unit 506 of FIG. 5A toperform ToF detection. The number of output bits N determines theresolution of the ADC, which may be set based on considerations ofsensitivity and speed in conversion for a given application. Examples ofvarious types of ADCs include flash ADC,successive-approximation-register ADC, and delta-sigma ADC. The ADC maybe a differential ADC that, for example, converts a difference inamplified voltage between at the output of a differential amplifier3022. Various implementations of the ADC array 3030, similar to theamplifier array 3020, may have different number of ADCs. The number ofADCs may be equal to (i.e., one-to-one correspondence) or less than(i.e., several amplifiers sharing one ADC) the number of amplifiers 3022in the amplifier array 3020 depending on various design considerations,such as a desired conversion speed.

An imaging system such as a ToF imaging system 500 may be exposed to awide range of optical signal magnitudes during operation. For example,the optical signal magnitude may be affected by ambient lightingcondition, reflectivity of a target object, or distance of the imagingsystem 500 from the target object, and the signal magnitude can vary byseveral orders of magnitude over various operating conditions (e.g., afactor of 2 or more, a factor of 10 or more, or a factor of 100 ormore). A change in optical signal magnitude typically results in alinearly proportional change in the photocurrent generated by thephotodetectors of the pixels.

The pixel array 3010 operates by integrating the photocurrent generatedby each of the photodetectors of the pixels on respective capacitorsover a certain period of time (e.g., a nominal integration time) togenerate an electrical signal proportional to the detected opticalsignal. For example, the capacitor may be charged to a preset voltage(e.g., 1.8 V) at the beginning of an image acquisition cycle, at whichpoint the capacitor is storing a charge Q determined by the formulaQ=C*V, where C is the capacitance of the capacitor and V is the voltageof the capacitor. Then the charged capacitor is discharged by thephotocurrent Iph, which is defined as Iph=ΔQ/Δt, i.e., change in anamount of charge Q in a given change in time t. The magnitude of thephotocurrent Iph generated by the photodetector directly affects therate at which the associated capacitor is discharged. The maximumintegration time corresponds to the time tmax=Q/Iph, which is the timeneeded to completely discharge the capacitor. When the maximumintegration time is shorter than the nominal integration time, and theintegration over the nominal integration time completely discharges thecapacitor as a result (and more generally, when the capacitor has beendischarged to a second preset voltage), the pixel is said to be“corrupted” or “bloomed,” at which point the electrical output of thepixel is no longer proportional to the received light input, resultingin distortion of acquired image or incorrect ToF measurements. As such,if the optical signal is sufficiently large to corrupt one or morepixels within a preset integration time period, the integration of thesignal may be terminated prior to corruption of the pixels. Such earlytermination of the optical signal integration may result in generationof a sub-frame, which is a result of partial integration over a fractionof the nominal integration time. Multiple sub-frames may be acquiredover the nominal integration time, and the multiple sub-frames may bepost-processed to generate a single image frame.

Once integration of the optical signal is terminated, the electricaloutputs of the pixels are amplified by the amplifiers 3022 and convertedto digital outputs 3040 by the ADC array 3030 to generate a frame or asub-frame. Once the conversion is completed, the capacitors are chargedback up to the preset voltage, and the acquisition cycle is repeated.Because a large optical signal leads to a corresponding decrease inmaximum integration time for each acquisition cycle, large optical inputsignal leads to a corresponding increase in the rate of generation ofsub-frames and the digital output 3040. For some applications, suchincrease in data output may not be desired due to, for example, anincrease in power consumption or an increase in system complexitynecessary to support the increased data throughput. As such, a solutionto increase the maximum integration time of the pixels, decrease outputdata rate of the ADCs, decrease output data rate of the ToF receiverunit 3000, or a combination thereof, is desired.

One approach to increasing the maximum integration time or decreasingoutput data rate is to increase the capacitance of the capacitorsassociated with each pixels of the pixel array 3010. Increasing thecapacitance by a constant factor can increase the maximum integrationtime by approximately the same constant factor, and may increase adynamic range of the ToF receiver unit. However, capacitors are physicalstructures fabricated in the device layer where the photodetectors arefabricated or in the backend interconnect layers, and capacitancetypically scale linearly with its total area. As such, the capacitanceof a capacitor monolithically integrated with the photodetector islimited by the available real estate within the sensor wafer in whichthe pixel array 3010 is fabricated. These issues can be solved by havingadditional capacitors be fabricated on a second wafer and bonded to thesensor wafer to further increase the capacitance of each of the pixels.

FIGS. 31A and 31B show a schematic view and a cross-sectional view of anexample ToF receiver unit 3100 with increased capacitance. The ToFreceiver unit 3100 includes an integrated circuit (IC) wafer 3110, asensor wafer 3130, and interconnects 3170. The IC wafer 3110 includes afirst capacitor 3112 and pixel transistors 3120. The sensor wafer 3130includes a second capacitor 3132 and a ToF pixel 3140. The IC wafer 3110and the sensor wafer 3130 are bonded together, for example, using awafer bonding process, and the interconnects 3170 electrically couplethe ToF pixel 3140, the first and second capacitors 3112 and 3132, andthe pixel transistors 3120. By utilizing the space available forfabrication of the capacitors 3112 and 3132 in both the IC wafer 3110and the sensor wafer 3130, the total capacitance available forintegration of the ToF pixel 3140 may be increased by a factor of tworelative to a configuration in which the first and second capacitors areboth fabricated on a single wafer. Such increase in capacitance mayincrease the maximum integration time of the ToF pixel 3140, reducingthe rate of generation of sub-frames and corresponding data throughputby the same factor.

The ToF pixel 3140 may be a switched photodetector, such as the switchedphotodetector 100. The ToF pixel 3140 includes a first switch 3150 and asecond switch 3160, each having respective carrier readout (collection)terminal 3152 and 3162 (“R”), and carrier control (modulation) terminal3154 and 3164 (“C”). The first switch 3150 may be similar, for example,to the first switch 108 of FIG. 1A, the carrier readout terminal 3152may be similar to the n-doped region 126, and the carrier controlterminal 3154 may be similar to the p-doped region 128. Similarly, thesecond switch 3160 may be similar, for example, to the second switch 110of FIG. 1A, the carrier readout terminal 3162 may be similar to then-doped region 136, and the carrier control terminal 3164 may be similarto the p-doped region 138. The ToF pixel 3140 may be a back-sideilluminated (BSI) pixel in that the optical signal may enter the ToFpixel 3140 from the backside of the sensor wafer 3130 opposite to theside on which the ToF pixel 3140 is fabricated.

The pixel transistors 3120 are transistors configured to control theoperation of the ToF pixel 3140. The pixel transistors 3120 includesfirst and second readout transistors 3122 and 3124 for collectingcarriers from the readout terminals 3152 and 3162. The pixel transistors3120 may include readout circuit having a 3T configuration (i.e., athree-transistor configuration having a reset, a source-follower, and arow-select transistors), or may include circuits similar to the readoutcircuits 124 and 134 shown in FIG. 1A. The pixel transistors 3120 mayinclude control transistors 3126 and 3128 for providing control signalsto the control terminals 3154 and 3164. The control signals provided bythe control transistors 3126 and 3128 may be similar to the controlsignals 122 and 132 shown in FIG. 1A.

The first and second capacitors 3112 and 3132 may be implemented usingstandard semiconductor IC fabrication techniques. Examples of the firstand second capacitor 3112 and 3132 include metal-oxide-metal (MOM)capacitors and metal-insulator-metal (MIM) capacitors. In someimplementations, the oxide or insulator of the capacitors may bereplaced with high-k dielectric constant materials such as Al2O3, HfO2,ZrO2, or La2O3. While the capacitors are illustrated as parallel platecapacitors, various structures having capacitance may be used as thecapacitors 3112 and 3132, including floating diffusion capacitors andmetal-oxide-semiconductor (MOS) capacitors. In general, the first andsecond capacitors 3112 and 3132 may each be implemented as a bank ofcapacitors in parallel for manufacturability or performance reasons.

Referring to FIG. 31B, the first and second capacitors 3112 and 3132 areelectrically coupled to the input terminals (e.g., source or drainterminal) of the readout transistors 3124 and 3122, respectively. Thefirst readout transistors 3122 collect the carriers from the carrierreadout terminals 3152 and provide the collected carriers to the secondcapacitor 3132 through its output terminal (e.g., source or drainterminal). The second readout transistors 3124 collect the carriers fromthe carrier readout terminals 3162 and provide the collected carriers tothe first capacitor 3112 through its output terminal (e.g., source ordrain terminal). In this configuration, a voltage may be applied to gateterminals of the readout transistors 3122 and 3124 to control thetransfer of the carriers from the ToF pixel 3140 to the respectivecapacitors 3132 and 3112.

While a particular association of the capacitor 3112 and 3132 to thereadout terminals 3152 and 3162 has been described, in general, theassociation between the capacitors 3112 and 3132 and the readoutterminals 3152 and 3162 may be swapped and operate in analogous manner.Respective terminals of the first and second capacitors 3112 and 3132that are not connected to the readout terminals 3124 and 3122 may be,for example, grounded, floating, or connected to a power supply.

The IC wafer 3110 and the sensor wafer 3130 may be bonded in variousways. Examples on bonding techniques include metal to metal bonding,oxide to oxide bonding, and hybrid bonding. The interconnects 3170 mayinclude bonding pads 3172, which provides electrical coupling betweenthe portions of the interconnects 3170 formed in the IC wafer 3110 andthe sensor wafer 3130. The bonding pads 3172 may be copper pillars orpads, and may provide mechanical coupling between the IC wafer 3110 andthe sensor wafer 3130.

While a single ToF pixel 3140 is shown in FIGS. 31A and 31B forillustrative purposes, in general, the receiver unit 3100 may include anarray of ToF pixels 3140 connected to an array of pixel transistors3120.

While the ToF pixel 3140 having two switches 3150 and 3160 coupled totwo capacitors 3132 and 3112 is shown in FIGS. 31A and 31B forillustrative purposes, in general, the ToF pixel 3140 may include threeor more switches that are electrically coupled to three of morecapacitors.

FIG. 31C show a schematic view of an example ToF receiver unit 3180 withincreased capacitance. The ToF receiver unit 3180 is similar to the ToFreceiver unit 3100 of FIG. 31A, but differs in that the first and secondcapacitors 3112 and 3132 are now directly electrically coupled torespective carrier readout terminals 3162 and 3152 without interveningtransistors.

FIG. 31D show a schematic view of an example ToF receiver unit 3182 withincreased capacitance. The ToF receiver unit 3180 is similar to the ToFreceiver unit 3100 of FIG. 31A, but differs in that the first capacitor3132 is split into first sub-capacitors 3133 and 3134, and the secondcapacitor 3112 is split into second sub-capacitors 3113 and 3114. Thesub capacitors 3113 and 3133 are located in the sensor wafer 3130 andthe sub capacitors 3114 and 3134 are located in the IC wafer 3110. Thefirst sub-capacitors 3113 and 3114 are electrically connected in aparallel configuration to achieve similar increase in capacitance as theconfiguration show in FIG. 31A. The first sub-capacitors 3113 and 3114are electrically coupled with the readout transistors 3124, and areconfigured to be charged or discharged by the carriers collected fromthe readout terminal 3162. Similarly, the second sub-capacitors 3133 and3134 are electrically connected in a parallel configuration to achievesimilar increase in capacitance as the configuration show in FIG. 31A.The second sub-capacitors 3133 and 3134 are electrically coupled withthe readout transistors 3122, and are configured to be charged ordischarged by the carriers collected from the readout terminal 3152.

In general, the IC wafer 3110 and the sensor wafer 3130 are fabricatedindependent of each other. For example, the two wafers 3110 and 3130 maybe fabricated using different processing techniques, different processnodes, by different foundries, and/or at different times, all of whichmay affect the capacitance of a capacitor fabricated in the wafers 3110or 3130 due to finite manufacturing process tolerance and variability.By splitting the first capacitor associated with the readout terminal3162 into sub-capacitor 3113 located in the sensor wafer 3130 andsub-capacitor 3114 located in the IC wafer, and similarly for the secondcapacitor associated with the readout terminal 3152 into sub-capacitors3133 and 3134, any variations in capacitors of one wafer affects thetotal first or second capacitances in equal amounts, thereby helping toreduce or eliminate potential imbalance in the two capacitancesresulting from any variability or mismatch between the IC wafer 3110 andthe sensor wafer 3130.

FIG. 31E show a schematic view of an example ToF receiver unit 3184 withincreased capacitance. The ToF receiver unit 3184 is similar the ToFreceiver unit 3182 of FIG. 31D, but differs in that the firstsub-capacitors 3113 and 3114 and the second sub-capacitors 3133 and 3134are now directly electrically coupled to respective carrier readoutterminals 3162 and 3152 without intervening transistors.

FIG. 31F show a schematic view of an example ToF receiver unit 3186 withincreased capacitance. The ToF receiver unit 3186 is similar to the ToFreceiver unit 3100 of FIG. 31A, but differs in that the pixeltransistors 3120 have been moved from the IC wafer 3110 into the sensorwafer 3130. In some cases, the pixel transistors 3120 may be moved intounoccupied spaces in the sensor wafer 3130 that surround the ToF pixel3140. Such placement of the pixel transistors 3120 may improveperformance of the receiver unit 3186, and/or free up space in the ICwafer 3110 for other components of the receiver unit 3186, such asadditional capacitors, memories, amplifiers, or ADCs.

FIG. 31G show a schematic view of an example ToF receiver unit 3188 withincreased capacitance. The ToF receiver unit 3188 is similar to the ToFreceiver unit 3180 of FIG. 31C, but differs in that the pixeltransistors 3120 have been moved from the IC wafer 3110 into the sensorwafer 3130. In some cases, the pixel transistors 3120 may be moved intounoccupied spaces in the sensor wafer 3130 that surround the ToF pixel3140. Such placement of the pixel transistors 3120 may improveperformance of the receiver unit 3188, and/or free up space in the ICwafer 3110 for other components of the receiver unit 3188, such asadditional capacitors, memories, amplifiers, or ADCs.

FIG. 31H show a schematic view of an example ToF receiver unit 3190 withincreased capacitance. The ToF receiver unit 3190 is similar to the ToFreceiver unit 3182 of FIG. 31D, but differs in that the pixeltransistors 3120 have been moved from the IC wafer 3110 into the sensorwafer 3130. In some cases, the pixel transistors 3120 may be moved intounoccupied spaces in the sensor wafer 3130 that surround the ToF pixel3140. Such placement of the pixel transistors 3120 may improveperformance of the receiver unit 3190, and/or free up space in the ICwafer 3110 for other components of the receiver unit 3190, such asadditional capacitors, memories, amplifiers, or ADCs.

FIG. 31I show a schematic view of an example ToF receiver unit 3192 withincreased capacitance. The ToF receiver unit 3192 is similar to the ToFreceiver unit 3184 of FIG. 31E, but differs in that the pixeltransistors 3120 have been moved from the IC wafer 3110 into the sensorwafer 3130. In some cases, the pixel transistors 3120 may be moved intounoccupied spaces in the sensor wafer 3130 that surround the ToF pixel3140. Such placement of the pixel transistors 3120 may improveperformance of the receiver unit 3192, and/or free up space in the ICwafer 3110 for other components of the receiver unit 3192, such asadditional capacitors, memories, amplifiers, or ADCs.

In general, the pixel transistors 3120 in ToF receiver units 3100 ofFIGS. 31A and 31B, 3182 of FIG. 31D, 3186 of FIG. 31F, and 3190 of FIG.31H, can be controlled to select a suitable total capacitance value fora target integration time while minimizing the noises from the followingamplifiers array 3020 and the ADCs 3030.

FIG. 32 shows a block diagram of an example receiver unit 3200 for ToFdetection. The ToF receiver unit 3200 is similar to the ToF receiverunit 3000 of FIG. 30 , but further includes a memory module 3210 and adigital signal processing (DSP) module 3220. The memory module 3210 iselectrically coupled to the digital output 3040 of the ADC 3030 and tothe input of the DSP module 3220. The DSP module 3220 outputs digitallyprocessed data as DSP output 3230.

The memory module 3210 is configured to store the digital outputs 3040of the ADC 3030 corresponding to the amplified electrical signals fromthe pixel array 3010. The memory module 3210 may store multiple digitaloutputs corresponding to the sub-frames generated by input opticalsignal of large magnitude, buffering the sub-frames prior to outputtingor for further processing of the digital output 3040. For example, thereceiver unit 3200 may generate data at a rate that is higher than therate at which the data can be transferred to a system receiving the DSPoutput 3230. Such increase in data generation rate may be, for example,due to high optical signal magnitude, or a burst-mode acquisition of theToF image frames. Under such conditions, the memory module 3210 maystore the excess data while the receiver unit 3200 transmits the DSPoutput 3230 to the data receiving system.

The DSP module 3220 is configured to digitally process the digital datastored by the memory module 3210. The DSP module 3220 may be configuredto perform, among others, various arithmetic operations, Booleanoperations, or specialized digital operations such as Fast FourierTransform (FFT) on the data received from the memory module 3210. Forexample, the DSP module 3220 may process multiple sub-frames stored inthe memory module 3210 into a single complete frame or a portion of thecomplete frame containing a region of interest to be output to the datareceiving system.

By processing multiple sub-frames, generating a single complete frame ora portion of the complete frame containing a region of interest, andoutputting the single complete frame or the portion of the completeframe containing the region of interest to the data receiving system,the total external data throughput of the receiver unit 3200 can bereduced. In some implementations, the total external data throughput ofthe receiver unit 3200 may be reduced by a factor corresponding to thenumber of sub-frames. As another example, the DSP module 3220 mayprocess the data stored into the memory module 3210 to determine andfilter depth information from the ToF measurements.

The memory module 3210 and the DSP module 3220 may be implemented aloneor in combination with various configurations of ToF receivers withincreased capacitances such as those described in relation to FIGS.31A-31I. Combination of the memory module 3210 and the DSP module 3220and the increased capacitances may reduce external data throughput andreduce the number of generated sub-frames. Reduction in the number ofsub-frames may reduce the requirement on the storage capacity of thememory module 3210. Further, the reduction of the number of sub-framesmay reduce the number of processing operations performed by the DSPmodule 3220. Such reduction in number of sub-frames and correspondingreduction in the memory capacity and/or the processing operations mayresult in a reduced power consumption by the ToF receiver unit.

In some implementations, the DSP module 3220 may include the processingunit 506 of FIG. 5A. The DSP module 3220 may be implemented, forexample, as a general purpose processor or as an application specificintegrated circuit.

FIG. 33A shows a cross-sectional schematic view of an example receiverunit 3300 for ToF detection. The receiver unit 3300 includes the ICwafer 3110 and the sensor wafer 3130. The IC wafer 3110 includes thepixel transistors array 3320, the amplifier array 3020, and the ADCs3030. The sensor wafer 3130 includes the ToF pixel array 3010 and thememory module 3210. The pixel transistors array 3320 is an array of thepixel transistors 3120 described in relation to FIG. 31A. The IC wafer3110 and the sensor wafer 3130 are bonded to each other through waferbonding. The interconnects 3170 and the bonding pads 3172 electricallycouple the various components of the receiver unit 3300.

The memory module 3210 may be distributed around unoccupied spaces inthe sensor wafer 3130 that surround the ToF pixel array 3010. Forexample, in a BSI-configuration receiver unit 3300, the areas withinsensor wafer 3130 that are located above the amplifier array 3020 andthe ADCs 3030 may be unoccupied. By placing the memory module 3210 inunoccupied spaces located above the amplifier array 3020 and the ADCs3030, performance of the receiver unit 3300 may be improved withoutincreasing the size of the receiver unit 3300.

The memory module 3210 may be implemented in various configurations andusing various memory technologies. Examples of memory technologiesinclude static random access memory (SRAM), dynamic random access memory(DRAM), flash memory, resistive RAM (ReRAM), magnetic RAM (MRAM), phasechange RAM (PRAM), and ferroelectric RAM (FeRAM). Different memorytechnologies typically share a common architecture of a bit-storingelement coupled with a read/write transistor. For example, a DRAM bitincludes a capacitor for storing charges associated with a bit, and atransistor that reads from or writes into the capacitor. As anotherexample, a SRAM bit includes a flip-flop for storing states associatedwith a bit, and two transistors that read from or write into theflip-flop. Similarly, ReRAM has a variable resistance storage element,MRAM has a magnetic storage element, PRAM has a phase change storageelement, and FeRAM has a ferroelectric storage element for storing abit. In some implementations, two or more memory technologies may becombined and work in conjunction with each other. In the implementationshown in FIG. 33A, the memory module 3210 includes both the read/writetransistors and the associated bit storing element. In someimplementations, additional processing circuits may be included tofurther extend the functionalities of the memory module 3210. Forexample, digital adders may be included to further process the bitsstored by the memory.

FIG. 33B shows a cross-sectional schematic view of an example receiverunit 3330 for ToF detection. The receiver unit 3330 is similar to thereceiver unit 3300 of FIG. 33A, but differs in that the memory module3210 is replaced by a distributed memory module 3340. The distributedmemory module 3340 includes a storage element sub-block 3342 and aread/write transistor sub-block 3344. The storage sub-block 3342 islocated in the sensor wafer 3130, and the transistor sub-block islocated in the IC wafer 3110. In some implementations, additionalprocessing circuits such as digital adders may be included in theread/write transistor sub-block 3344 to further process the bits storedby the memory.

Storage elements 3342 are typically fabricated using specializedtechnologies and/or materials. For example, the capacitors of DRAM aretypically fabricated using specialized processes such as deep-trenchetching into a silicon substrate, which may not be compatible with themanufacturing process used for fabricating the IC wafer 3110. Further,the manufacturing process used for fabricating the IC wafer 3110 may bebetter optimized for fabrication of transistors, such as the read/writetransistors 3344. For example, the manufacturing process used for the ICwafer 3110 may be a more advanced process node having a smaller minimumfeature size than that of the sensor wafer 3130. As such, decoupling thefabrication of the storage elements 3342 and the read/write transistors3344 may improve performance of the memory module 3340 by allowingindependent optimization of the performances of the two sub-blocks 3342and 3344, and reduce manufacturing process complexity for the sensorwafer 3130 and the IC wafer 3110.

FIG. 33C shows a cross-sectional schematic view of an example receiverunit 3350 for ToF detection. The receiver unit 3350 is similar to thereceiver unit 3300 of FIG. 33A, but differs in that the memory module3210 is now located in the IC wafer 3110. For some memory technologiessuch as SRAM and flash, for a given process node, complete memorymodules may be provided as an intellectual property (IP) core by CMOSfoundries or third party vendors. Incorporation of these IP cores toimplement the memory module 3210 of the IC wafer 3110 may reduceresearch and development efforts.

FIG. 33D shows a cross-sectional schematic view of an example receiverunit 3360 for ToF detection. The receiver unit 3360 is similar to thereceiver unit 3350 of FIG. 33C, but differs in that the pixel transistorarray 3320 is now located in the sensor wafer 3130. Placement of thepixel transistors array 3320 in the sensor wafer 3130 may allow improvedspace utilization within the IC wafer 3110. For example, the memorymodule 3210 may be placed on a location below the ToF pixel array 3010,which may be unoccupied as the amplifier array 3020 and the ADCs 3030are located below the pixel transistors array 3320 to simplifyelectrical connections between those components.

FIG. 33E shows a cross-sectional schematic view of an example receiverunit 3370 for ToF detection. The receiver unit 3370 is similar to thereceiver unit 3360 of FIG. 33D, but differs in that the memory module3210 is now located in the sensor wafer 3130.

While the ToF pixel array 3010, the pixel transistors array 3320, thememory module 3210, and ADCs 3030, and the amplifier array 3020 havebeen shown as schematic blocks for illustrative purposes, in general,portions of each of those components may be distributed acrossrespective wafers 3110 and 3130. For example, a ToF pixel 3140 of theToF pixel array 3010 and pixel transistors 3120 of the pixel transistorsarray 3320 may be distributed across the wafers 3110 and/or 3130, andthe memory bits of the memory module 3210 or 3340 may be distributedacross the wafers 3110 and/or 3130 in spaces not occupied by the ToFpixel array 3010 or the pixel transistors array 3320.

In general, additional electrical and optical components may be added tothe receiver units described in relation to FIGS. 33A-33E. Examples ofelectrical components include resistors, inductors, data processingcircuits (e.g., processors, FPGA, ASIC), biasing circuits (e.g., toprovide bias voltage to the sensor wafer 3130 and/or the controlterminals 3154 and 3164 of the ToF pixel 3140), and light source drivercircuits (e.g., to provide electrical pulses to the transmitter unit 502for generation of optical pulses). Examples of optical componentsinclude anti reflection coating (ARC), microlens, bandpass filters, andreflectors. Examples of microlens include micro ball lens, Fresnel zoneplates, and integrated silicon microlens.

In general, an intermediate layer may be present between the IC wafer3110 and the sensor wafer 3130. The intermediate layer may providevarious benefits, such as improvements in electrical coupling betweenthe two wafers, improvement in the bonding quality and yield of the twowafers, and improvement in the optical performance of the receiverunits. The intermediate layer may be formed from various materials suchas dielectric, polymer, and optical index matching material.

While two-way bonding of the IC wafer 3110 and the sensor wafer 3130 hasbeen described in relation to FIGS. 33A-33E, in general, a receiver unitcan be formed by bonding of three or more wafers. For example,additional IC wafers can be bonded to integrate additional capacitors tofurther increase the capacitances associated with the pixel array 3010.As another example, additional IC wafers can be bonded to integrateadditional memory elements to further increase the memory capacity ofthe memory module 3210.

In general, the sensor wafer 3130 of the receiver units described inrelation to FIGS. 33A-33E may be either front-side illuminated sensorwafer or back-side illuminated sensor wafer.

In general, the sensor wafer 3130, the ToF pixels 3140, or both can beformed from group III-V compound semiconductor materials, group IV alloysemiconductor materials, or a combination thereof.

FIG. 34 shows a cross-sectional schematic view of an example bondingprocess of an example receiver unit 3400 for ToF detection. The sensorwafer 3130 includes the ToF pixel 3140 and a backend layer 3136. The ICwafer 3110 includes the pixel transistors 3120 and a backend layer 3116.The backend layers 3116 and 3136 includes the interconnects 3170 and thebonding pads 3172, which are formed on the respective front sides of thewafers 3110 and 3130. The surfaces of the backend layers 3116 and 3136include dielectric surfaces and metallic surfaces of the bonding pads3172. Prior to bonding, sensor wafer is inverted such that the bondingpads 3172 of the sensor wafer 3130 faces the bonding pads 3172 of the ICwafer 3110. The two wafers are brought into contact in a controlledmanner, which may involve controlling of the force, temperature, andforming environment. The combination of the dielectric surfaces and themetallic surfaces allows for hybrid bonding of the wafers 3110 and 3130,resulting in both electrical and mechanical coupling between the twowafers.

The inversion of the sensor wafer 3130 for wafer bonding allowsreceiving of optical signal 3410 through the back side of the sensorwafer 3130. The sensor wafer 3130 may be a silicon wafer, which istransparent to the infrared wavelengths (e.g., >1.1 μm). As such,infrared optical signal 3410 may reach the ToF pixel 3140 through theback side of the sensor wafer 3130. Such configuration is referred to asa back-side illuminated (BSI) sensor.

In some implementations, the backend layer 3136 of the sensor wafer 3130may include a mirror 3420. The mirror 3420 is located below the lightabsorption region of the ToF pixel 3140. As such, any light that is notabsorbed by the ToF pixel 3140 as it passes through the pixel 3140 isreflected by the mirror 3420, and reflected back toward the ToF pixel3140, which is further absorbed by the ToF pixel 3140. The mirror 3420may be, for example, metal mirror, a dielectric mirror, or a distributedBragg reflector. The mirror 3420 may be a combination of a dielectriclayer (e.g., silicon oxide or silicon nitride) followed by a metallayer. In some implementations, the mirror 3420 may be a concave mirrorconfigured to reflect light toward a focal point located within the ToFpixel 3140.

In some implementations, the sensor wafer 3130 may include a partialmirror 3422. The partial mirror 3422 is formed on the back side of thesensor wafer 3130, and allows a portion of light to pass through intothe ToF pixel 3140. The partial mirror 3422 may create a destructiveinterference at the interface between the partial mirror 3422 and air,such that the light reflected by the mirror 3420 toward the partialmirror 3422 is reflected back toward the ToF pixel 3140. When suchcondition is satisfied, the partial mirror 3422 in combination with themirror 3420 forms a resonant cavity, which allows multiple reflectionlight between the two mirrors 3420 and 3422. The formed resonant cavitymay improve the detection efficiency of the ToF pixel 3140 at theresonant wavelength of the resonant cavity. The partial mirror 3422 maybe, for example, a dielectric mirror or a distributed Bragg reflector.The partial mirror 3422 may have a transmissivity that is substantiallyequal to a roundtrip attenuation of the light passing through the ToFpixel 3140 and reflected by the mirror 3420.

In some implementations, the backend layer 3116 of the IC wafer 3110 mayinclude a mirror 3424. After bonding of the sensor wafer 3130 and the ICwafer 3110, the mirror 3424 is located below the light absorption regionof the ToF pixel 3140. As such, any light that is not absorbed by theToF pixel 3140 as it passes through the pixel 3140 is reflected by themirror 3424, and reflected back toward the ToF pixel 3140, which infurther absorbed by the ToF pixel 3140. The mirror 3424 may be, forexample, metal mirror, a dielectric mirror, or a distributed Braggreflector. The mirror 3424 may be a combination of a dielectric layer(e.g., silicon oxide or silicon nitride) followed by a metal layer. Insome implementations, the mirror 3424 may be a concave mirror configuredto reflect light toward a focal point located within the ToF pixel 3140.

In the previous sections, approaches to increasing integration timethrough increasing capacitance have been described. An importantconsideration when determining integration time is a dark current of thephotodetector, which is a current that flows in absence of an opticalsignal and ambience light. In general, signal to noise ratio (SNR) ofoptical measurements made through photodetectors, such as ToFmeasurements made through switched photodetectors, are negativelyinfluenced by the presence of the dark current. For example, the SNR ofan optical measurement through a photodetector is linearly proportionalto the integration time. Further, the integration time for a givencapacitance may be limited by the dark current, as the dark currentcontinuously discharges the capacitor charge even in absence of theoptical signal and ambient light.

The dark current of a photodetector is typically an exponential functionof the reverse bias voltage established across the cathode and anode ofthe photodetector. As such, reducing the reverse bias voltage in acontrolled manner while retaining the overall operation of thephotodetector may lead to improved SNR performance of the photodetector.

FIG. 35 shows a schematic diagram of a circuit 3500 for operating a ToFpixel. The circuit 3500 includes a first readout subcircuit 3510 and asecond readout subcircuit 3530 coupled to a switched photodetector 3550.The first readout subcircuit 3510 includes a first MOSFET transistor3512 and a second MOSFET transistor 3520. The second readout subcircuit3530 includes a third MOSFET transistor 3532 and a fourth MOSFETtransistor 3540. The first readout subcircuit 3510 is coupled to a firstsource follower circuit 3560, and the second readout subcircuit 3530 iscoupled to a second source follower circuit 3570. The first readoutsubcircuit 3510 and the first source follower circuit 3560 may bereferred to as a first readout circuit, and the second readoutsubcircuit 3530 and the second source follower circuit 3570 may bereferred to as a second readout circuit.

The switched photodetector 3550 includes a body 3551, a first readoutterminal 3552 and a second readout terminal 3554. The switchedphotodetector 3550 may be implemented as any of the previously describedswitched photodetectors such as the switched photodetector 100 of FIG.1A. The body 3551 may be similar to the light absorption layer 106 orthe substrate 202, 302, and 402, and may be doped with p-type dopants.The first and second readout terminals 3552 and 3554 may be n-dopedregions, which may be similar, for example, to the n-doped regions 126and 136 of FIG. 1A. The photocurrent generated by the switchedphotodetector 3550 may be collected by either the first readout terminal3552 or the second readout terminal 3554 based on the control operationof the switched photodetector 3550.

Each of the MOSFET transistors 3512, 3520, 3532, and 3540 includes asource terminal, a drain terminal, and a gate terminal. The sourceterminal and the drain terminal may be identical in the underlyingstructure, but distinguished based on the direction of flow of thecurrent through the transistors. For example, for an N-type MOSFET(“NMOS transistor”) having a P-type channel region, the current may flowfrom the drain terminal to the source terminal through the channelregion, whereas for a P-type MOSFET (“PMOS transistor”) having an N-typechannel region, the current may flow from the source terminal to thedrain terminal through the channel region. As the designation of thesource and drain nomenclature is based on convention and as theunderlying structure may be similar or identical, the source and drainterminals may be referred to as a first channel terminal and a secondchannel terminal when describing the connectivity between the MOSFETsand other circuit elements.

The gate terminal controls the flow of current through the source andthe drain terminals. For example, a control voltage larger than athreshold voltage Vth may allow current to flow through the source anddrain terminals. Such mode of operation of the MOSFET transistors may bereferred to as operating in a saturation region or a triode region ofoperation, depending on voltages of the source and drain terminalsrelative to the gate terminal. In the saturation region, the currentflowing through the source and drain terminals is not strongly affectedby changes in the difference between the source and drain voltages(i.e., output impedance of the transistor is high). In the trioderegion, the current flowing through the source and drain terminals isapproximately linearly proportional to the difference between the sourceand drain voltages (i.e., the transistor operates similarly to aresistor). A control voltage smaller than the threshold voltage mayreduce the flow of current through the source and drain terminals. Forexample, the flow of current may be reduced exponentially as the controlvoltage is reduced below the threshold voltage. Such mode of operationof the MOSFET transistors may be referred to as operating in asubthreshold region of operation.

For the purpose of illustration, the circuit 3500 is implemented usingN-type MOSFET transistors. With respect to the first readout subcircuit3510, the source terminal of the first MOSFET 3512 is coupled to thefirst readout terminal 3552. The drain terminal of the first MOSFET 3512is coupled to the source terminal of the second MOSFET 3520, and thisnode of coupling may be referred to as a first output node 3515 of thefirst readout subcircuit 3510. A capacitor may be coupled to the firstoutput node 3515, which may be similar to the capacitors 3112 and 3132of FIGS. 31A and 31B. The drain terminal of the second MOSFET 3520 iscoupled to a first supply node 3508. Analogously, with respect to thesecond readout subcircuit 3530, the source terminal of the third MOSFET3532 is coupled to the second readout terminal 3554. The drain terminalof the third MOSFET 3532 is coupled to the source terminal of the fourthMOSFET 3540, and this node of coupling may be referred to as a secondoutput node 3535 of the second readout subcircuit 3530. A capacitor maybe coupled to the second output node 3535, which may be similar to thecapacitors 3112 and 3132 of FIGS. 31A and 31B. The drain terminal of thefourth MOSFET 3540 is coupled to the first supply node 3508.

The first supply node 3508 supplies a first supply voltage to the firstand the second readout subcircuits 3510 and 3530. A second supply node3502 supplies a second supply voltage to the first and the second sourcefollower circuits 3560 and 3570. One or more supply voltage sources mayprovide suitable first and second supply voltages to the first andsecond supply nodes 3508 and 3502, which may depend on various factorsincluding specific process node, circuit design, characteristics of theswitched photodetector 3550, reset voltage of the capacitor coupled tothe first output node 3515, and charge-to-voltage conversion gain. Thefirst supply node 3508 may be referred to as a VU node, and the firstsupply voltage of the VU node may be a user-defined voltage generatedby, for example, an on-chip integrated circuit block. The second supplynode 3502 may be referred to as a VE node, and the second supply voltageof the VE node may be an externally-defined voltage generated by, forexample, an off-chip power supply.

During operation of the ToF pixel, the first output node 3515 and thesecond output node 3535 are charged to a preset voltage through thesecond and fourth MOSFETs 3520 and 3540. For example, by applying asecond control voltage 3506 (Vc2) that causes the second and fourthMOSFETs 3520 and 3540 to operate in the saturation or triode region,current may flow from the first supply node 3508 to the respectiveoutput nodes 3515 and 3535 and charge the nodes to a preset voltage. Asecond control voltage source 3507 coupled to the gate terminals of thesecond and fourth transistor 3520 and 3540 can be used to apply thesecond control voltage 3506. The second control voltage 3506 may becontrolled to vary the preset voltage to which the output nodes 3515 and3535 are charged (e.g., set to the supply voltage or a fraction of thesupply voltage). Once the charging of the output nodes 3515 and 3535 iscomplete, the second control voltage 3506 may be set (e.g., to 0 V) toturn off second and fourth MOSFETs 3520 and 3540, which decouples theoutput nodes 3515 and 3535 from the first supply node 3508. Thischarging operation may be referred to as a reset operation of theswitched photodetector 3550, and the second and fourth MOSFETs 3520 and3540 may be referred to as reset transistors. The reset operation may bea step within the readout step of the ToF pixel.

Once the charging is complete, integration of the electrical signalgenerated by the switched photodetector 3550 may begin. The first andthird MOSFETs 3512 and 3532 may be controlled to initiate and terminatethe integration by generating, through a first control voltage source3505 coupled to the gate terminals of the MOSFETs 3512 and 3532, a firstcontrol voltage 3504 (Vc1) coupled to respective gate terminals. Forexample, the first control voltage 3504 may be set through the controlvoltage source 3505 to operate the first and third MOSFETs 3512 and 3532in the triode regions. In the triode region operation, the photocurrentgenerated by the switched photodetector 3550 may flow through the drainand source terminals of the MOSFETs 3512 and 3532 and through thereadout terminals 3552 and 3554. Such flow of the photocurrent throughthe readout terminals 3552 and 3554 may be integrated at the outputnodes 3515 and 3535 by discharging the respective capacitances that havebeen charged to the preset voltage during the reset operation.

Operation of the first and third MOSFETs 3512 and 3532 in the trioderegion is analogous to coupling the output nodes 3515 and 3535 torespective readout terminals 3552 and 3554 through respective resistors(“effective resistors”) put in place of the first and the third MOSFETs3512 and 3532. The resistances of such effective resistors are typicallyof modest values (e.g., 10 ohms to 10,000 ohms) that do not presentsignificant voltage drops in response to current flowing through thephotodetector. For example, the photodetector current, which may be acombination of photocurrent and dark current, is typically a smallcurrent that ranges from pA to μA, and the resulting voltage dropsacross the resistors are relatively small as well (e.g., ranging from nVto mV). As such, the voltages of the readout terminals 3552 and 3554 aresimilar to the voltages of the output nodes 3515 and 3535 within a smallvoltage drop. As the voltages of the output nodes 3515 and 3535 havebeen charged to a preset voltage that may approach the first supplyvoltage of the first supply node 3508, the readout terminals 3552 and3554 may experience similar voltages, resulting in a reverse bias acrossthe junctions of the switched photodetector 3550 that may be larger thanthe minimum reverse bias needed for proper operation of the switchedphotodetector 3550. Such excessive reverse bias results in increaseddark current, which may reduce the SNR of the output generated by thecircuit 3500.

Photodetectors of various design and material composition may benefitfrom controlling of the reverse bias voltage. Among materials forforming the absorption region of a photodetector, germanium maybe moresusceptible to dark current generation relative to silicon due to ahigher material defect density that is typically associated withgermanium absorption region grown on silicon substrate. As such,germanium-based switched photodetector 3550 may be well suited tobenefit from the controlling of the reverse bias voltage through thefirst control voltage 3504 and the resulting reduction in the darkcurrent.

The reverse bias established across the junctions of the switchedphotodetector 3550 may be reduced by decoupling the readout terminals3552 and 3554 from the respective output nodes 3515 and 3535 during theintegration time. Such decoupling may be achieved by operating the firstand third MOSFETs 3512 and 3532 in the saturation region or thesubthreshold region. Operation in the saturation region or thesubthreshold region allow the photocurrent generated by the switchedphotodetector 3550 to flow through the drain and source terminals of theMOSFETs 3512 and 3532 and through the readout terminals 3552 and 3554.However, due to the operating principles of the first and the thirdMOSFETs 3512 and 3532, the effective resistances, or the outputimpedances, of the first and the third MOSFETs 3512 and 3532 operatingin saturation or subthreshold regions are significantly higher thanoutput impedances of the first and the third MOSFETs 3512 and 3532operating in the triode region. High output impedance decouples theoutput nodes 3515 and 3535 from the readout terminals 3552 and 3554,which allows the voltages of the readout terminals 3552 and 3554 to bedifferent from (e.g., significantly lower than) the voltages of theoutput nodes 3515 and 3535. The voltages at the readout terminals 3552and 3554 are determined at least in part by the first control voltage3504 and the threshold voltages of the first and the third MOSFETs 3512and 3532 operating in the saturation or subthreshold regions. Thethreshold voltages may be determined by the design and structuralparameters of the MOSFETs such as channel doping concentration and gateoxide thickness, and may range, for example, from 0.1 V to 1V. Loweringthe first control voltage 3504 reduces the voltages at the readoutterminals 3552 and 3554, which reduces the reverse biases across thejunctions of the switched photodetector 3550. As a result, the darkcurrent of the switched photodetector 3550 may be reduced, and SNR ofthe output generated by the circuit 3500 may be improved.

The first and third MOSFETs 3512 and 3532 may be controlled to operatein the saturation region or the subthreshold region by controlling,through the first control voltage source 3505, the first control voltage3504. For example, MOSFETs can be operated in the saturation region bysetting the voltage difference between the gate terminal and the sourceterminal (VGS) to be greater than the threshold voltage (VTH) whilemaintaining the voltage difference between the drain terminal and thesource terminal (VDS) to be greater than VGS−VTH. As another example,MOSFETs can be operated in the subthreshold region by setting thevoltage difference between the gate terminal and the source terminal(VGS) to be smaller than the threshold voltage VTH. In general, thefirst control voltage 3504 may be varied to control the voltagedifference between the output nodes 3515 and 3535 and the readoutterminals 3552 and 3554. In some implementations, the first controlvoltage 3504 may be increased to reduce the voltage difference, and viceversa. In some implementations, the first control voltage 3504 maycontrol the voltage difference between the output nodes 3515 and 3535and the readout terminals 3552 and 3554 to be equal to or greater than10%, 30%, or 50% of the first supply voltage of the first supply node3508. In some implementations, the first control voltage 3504 maycontrol the voltages of the readout terminals 3552 and 3554 to be atleast 100 mV smaller than the voltages of the output nodes 3515 and3535.

When the first and third MOSFETs 3512 and 3532 are operated in eitherthe saturation region or the subthreshold region, the MOSFETs 3512 and3532 may be operating as current buffers that decoupled the sourcevoltage from the drain voltage.

After a preset integration time, the first control voltage 3504 may beset (e.g., to 0 V) to turn off the first and third MOSFETs 3512 and3532, which stops the photocurrent from flowing through the respectiveMOSFETs 3512 and 3532, stopping the integration. The preset integrationtime may be a variable integration time as described in relation to FIG.30 . The initiation and termination of the integration may be referredto as shutter operation, and the first and third MOSFETs 3512 and 3532may be referred to as shutter MOSFETs.

Once integration has been completed, the output nodes 3515 and 3535 holdoutput voltages that is inversely proportional to the photocurrent thatflowed through the respective readout terminals 3552 and 3554 over theintegration period. The output voltages may be buffered for furtherprocessing by the source follower circuits 3560 and 3570. For example,the buffered output voltages may be supplied to the amplifiers 3022 ofFIG. 30 . Additional operation details of the source follower circuits3560 and 3570 will be described in relation to FIGS. 37A and 37B.

While an N-type implementation of the circuit 3500 have been described,in general, the circuit 3500 may be implemented as a P-type circuit. Forexample, the MOSFETs 3512, 3520, 3532, and 3540 may be P-type MOSFETs,the source follower circuits 3560 and 3570 may be P-type sourcefollowers, the body 3551 of the switched photodetector 3550 (e.g., theabsorption region) may be N-doped, and the readout terminals 3552 and3554 may be P-doped regions. In some implementations, the MOSFETs 3512,3520, 3532, and 3540 may have different polarities. For example, forN-type readout terminals 3552 and 3554, the MOSFETs 3512 and 3532 may beN-type and MOSFETs 3520 and 3540 may be P-type. As another example, forP-type readout terminals 3552 and 3554, the MOSFETs 3512 and 3532 may beP-type and MOSFETs 3520 and 3540 may be N-type.

So far, various implementations of the switched photodetectors, ToFpixels, and receiver units have been described. Now, apparatuses fortesting the performance of the switched photodetectors, ToF pixels, orreceiver units will be described.

FIG. 36A shows a schematic side view of an example testing apparatus3600. The testing apparatus 3600 includes a probe card 3610, anilluminator board 3620, and mechanical supports 3650. The probe card3610 includes probe pins 3612 and an RF connector 3614. The illuminatorboard 3620 includes an illumination module 3622, a heat sink 3624,thermal vias 3626, driving electronics 3628, RF connectors 3614, biasconnectors 3630, an optical mount 3632, and optical elements 3634. Theilluminator board 3620 is mounted on the probe card 3610 through themechanical supports 3650. The probe card 3610 may be a printed circuitboard (PCB).

The probe card 3610 is an apparatus used in testing of electricaldevices on a semiconductor substrate 3602. Typically, the semiconductorsubstrate 3602 contains hundreds to thousands of dies, each die being adevice such as the receiver units described in relation to FIGS.33A-33E. Due to manufacturing variations, some dies may be defective ormay not meet the performance specification necessary to be sold as aproduct. As such, determining known good dies (KGD) by testing the dieson the substrate 3602 prior to singulation of the dies, and furtherprocessing only the known good dies may save manufacturing cost.

The probe card 3610 makes a temporary electrical connection to a dieformed on the substrate 3602 through the probe pins 3612. The die beingtested is referred to as a device under test (DUT) 3604. The probe pins3612 are arranged to match the electrical contact points of the DUT3604. By aligning the probe card 3610 to DUT 3604 and brining the DUT3604 into contact with the probe pins 3612, multiple electricalconnections ranging from tens to hundreds of connections can besimultaneously established. Various electrical signals including power,ground, biases, digital inputs/outputs, and analog inputs/outputs may becoupled onto and out from the DUT 3604 through the probe pins 3612. Oncetesting is done for the DUT 3604, the substrate 3602 is shifted to alignand contact the next DUT 3604 for testing. Such operation may beautomated using an automated wafer prober.

The probe pins 3612 may be formed from various metals based on factorssuch as contact resistance requirement, durability requirement, andmaterial of the contact pads on the DUT 3604. Example materials for theprobe pins 3612 include tungsten, tungsten alloys, palladium, platinum,and gold. The probe pins may be, for example, individually formedneedles or micro electro-mechanical system-based (MEMS) array of contactelements.

Testing of optoelectronic devices such as switched photodetectors, ToFpixels, and receiver units may require optical signals to be provided astest inputs, which cannot be provided through the probe pins 3612. Assuch, the testing apparatus 3600 includes the illuminator board 3620configured to generate optical test signals 3636 to facilitate testing.The optical test signal 3636 may be, for example, modulated opticalsignal suitable for ToF detection, such as the light pulses 2812described in relation to FIGS. 28A-28C. As another example, the opticaltest signal 3636 may be an unmodulated light of known optical power.Such optical test signal 3636 may be used to determine the responsivityof the switched photodetectors or the overall light detection efficiencyof the receiver units.

Modulated optical test signal 3636 may be generated by the illuminationmodule 3622. The illumination module 3622 may be, for example, aspecialized module for generation of the modulated optical test signal3636. For example, the illumination module 3622 may be the transmitterunit 2802 described in relation to FIGS. 28A-28C. The illuminationmodule 3622 may also be a general purpose optical signal generator, suchas a laser diode or a LED and associated driving circuitries. Theillumination module is mounted on a mounting area located on the frontside of the illuminator board 3620 that faces the substrate 3602. Themounting area includes thermal vias 3626, which conduct the heatgenerated by the illumination module 3622 through the illuminator board3620. For example, the thermal vias 3626 may be metal vias filled withmetal or various thermally conductive fill materials. The heat generatedby the illumination module 3622 is dissipated by the heat sink 3624attached on the side of the illuminator board 3620 opposite to theillumination module 3622. Thermal interface material, such as thermalglue or thermal paste may be applied at the interface between theilluminator board 3620 and the heat sink 3624 to enhance the thermalconduction between the two.

The functional testing of the DUT 3604 may require the optical testsignal 3636 to be modulated to have a specific waveform, be insynchronization with the operation of the DUT 3604, or both. Forexample, for testing of a ToF receiver unit such as the receiver unit2804, the optical test signal 3636 should be light pulses that have apulse duration determined by the receiver unit 2804 and are phasealigned with the operation of the readout circuits of the receiver unit2804. Such optical test signal 3636 may be generated by providing to theilluminator board 3620 one or more control signals generated by the DUT3604. For example, the control signal may be an analog or RF signal formodulating the light source of the illumination module 3622. The drivingelectronics 3628 may receive the control signal and condition (e.g.,amplify, buffer) the control signal for driving of the illuminationmodule 3622. As another example, the control signals may be a triggersignal that marks the timing for emitting the pulses and associateddigital signals that define other characteristics of the pulse such asshape, duration, and amplitude.

The control signal generated by the DUT 3604 is first coupled to theprobe card 3610 through the probe pins 3612. The control signal is thenrouted to an RF connector 3614 of the probe card 3610. A RF cable 3638couples the RF connector 3614 of the probe card 3610 to a RF connector3614 of the illuminator board 3620, coupling the control signal onto theilluminator board. The control signal is then provided to theillumination module 3622 through the illuminator board 3620.

The illumination module 3622 may require additional electrical inputssuch as additional control signals, bias signals, and power inputs. Suchadditional electrical inputs may be provided through an electricalconnector 3630.

The light output by the illumination module 3622 may be processed and/orfiltered to generate the optical test signal 3636. For example, theoptical elements 3634 may be mounted onto the optical mount 3632 toprocess the optical test signal 3636. Examples of the optical elementsinclude polarization filters, wavelengths filters, attenuators, pupillenses, and collimators, and apertures. Such optical elements made bemounted, removed, or swapped out from the optical mount to vary theoptical test signal 3636.

FIG. 36B shows a schematic side view of an example testing apparatus3660. The testing apparatus 3660 is similar to the testing apparatus3600 of FIG. 36A, but differs in that the RF connectors 3614 are nowcoupled to each other with a rigid RF connection 3639, and theilluminator board 3620 is electrically coupled to the probe card 3610through one or more electrical connection 3631. The replacement of theRF cable 3638 with the rigid RF connection 3639 may improve compactnessof the testing apparatus 3660, which may be an important considerationwhen fitting the testing apparatus 3660 in a space-constrainedproduction testing environment. Further, the rigid RF connection 3639 ofFIG. 36B may provide improve phase stability of the control signalrelative to the RF cable 3638 of FIG. 36A.

While the illuminator board 3620 and the probe card 3610 have been shownas separate elements in FIGS. 36A and 36B, in some implementations, theilluminator board 3620 may be directly integrated onto the probe card3610 as a single unit. In some implementations, the illuminator board3620 may be mounted on a structure other than the probe card 3610. Forexample, the illuminator board 3620 may be mounted onto a testingchamber or a wafer prober.

Testing performance characteristics of a time-of-flight receiver such asthe receiver unit 2804 of FIG. 28A may include testing performancecharacteristics of individual pixels of the ToF receiver. Examples ofperformance parameters to be tested include dark current as well asquantum efficiency and demodulation contrast of the optical signaldetected by the switched photodetectors.

Testing of such parameters at the individual pixel level may be donethrough dedicated external electrical access points such as test keystructures with bonding or probing pads. However, such approach mayincrease size or complexity of the ToF receiver, negatively impact theperformance of the ToF pixels, and/or increase production testing timeand complexity. Alternatively, such testing may be performed throughcircuits integrated in the ToF receiver, such as ADCs. Use of circuitsintegrated in the ToF receiver may reduce or eliminate a need foradditional bonding/probing pads for testing of the ToF receiver, reduceproduction testing complexity and time, and/or improve testing accuracydue to elimination of testing variability and noise involved in directanalog measurements of sensitive signals from the individual pixels.

FIG. 37A shows a schematic diagram of a circuit 3700 for digitizingmeasurements from ToF pixels. The circuit 3700 includes an array ofpixel circuits 3710, a row of common-mode ADCs 3720 having common-modeADCs 3722, a row of differential-mode ADCs 3730 having differential-modeADCs 3732, and a replica circuit 3740. The pixel circuits 3710 arearrayed as an M by N array with M rows and N columns. The pixel circuits3710 each have first and second output terminals 3760 and 3770. Thefirst and second output terminals 3760 and 3770 of the pixel circuits3710 along each of the columns are electrically coupled to respectiveshared column buses 3712 and 3713. The shared column buses 3712 and 3713are electrically coupled to corresponding common-mode ADCs 3722 anddifferential-mode ADCs 3732. The shared column buses are each coupled tocorresponding current sources, which is omitted in the diagram forclarity. A replica output terminal 3749 of the replica circuit 3740presents a replica voltage VREP and is electrically coupled to an inputof the common-mode ADCs 3722.

FIG. 37B shows a schematic diagram of the pixel circuit 3710. The pixelcircuit 3710 includes reset switches 3752 and 3754, capacitors 3756 and3758, the switched photodetector 3550, and source follower circuits 3560and 3570. The circuit 3710 may be similar to the circuit 3500 of FIG. 35, but differs in that the MOSFET transistors 3512 and 3532 have beenomitted, and capacitors 3756 and 3758 have been added. The resetswitches 3752 and 3754 may be implemented as the MOSFET transistors 3520and 3540 of FIG. 35 , and a RESET control signal configured to controlthe operation of the reset switches 3752 and 3754 may be implemented asthe second control voltage 3506.

The first source follower circuit 3560 includes a first input MOSFETtransistor 3762 and a first select switch 3764. A gate terminal of thefirst input MOSFET 3762 is coupled to the capacitor 3756. A sourceterminal of the first input MOSFET 3762 is coupled to the select switch3764, which controls the electrical coupling of the first input MOSFET3762 to the first output terminal 3760. The select switch 3764 may beimplemented, for example, as a MOSFET transistor. A first current source3766 is electrically coupled to the output terminal 3760, and may beshared among a column of pixel circuits 3710 through the shared columnbus 3712.

The second source follower circuit 3570 includes a second input MOSFETtransistor 3772 and a second select switch 3774. A gate terminal of thesecond input MOSFET 3772 is coupled to the capacitor 3758. A sourceterminal of the second input MOSFET 3772 is coupled to the select switch3774, which controls the electrical coupling of the second input MOSFET3772 to the second output terminal 3770. The select switch 3774 may beimplemented, for example, as a MOSFET transistor. A second currentsource 3776 is electrically coupled to the output terminal 3770, and maybe shared among a column of pixel circuits 3710 through the sharedcolumn bus 3713.

The capacitors 3756 and 3758 stores the signal generated by the switchedphotodetector 3550, and holds respective voltages VFD1 and VFD2. Thesource follower circuits 3560 and 3570 receive voltage inputs VFD1 andVFD2, and provide buffered signals that corresponds to VFD1 and VFD2 asVOUT1 at the first output terminal 3760 and as VOUT2 at the secondoutput terminal 3770. For example, VOUT1 and VOUT2 may correspond toVFD1 and VFD2 minus a constant offset voltage, which may be determinedbased on various factors such as a threshold voltage and/or an overdrivevoltage of MOSFETs of the source follower circuits, and a bias currentgenerated by the current sources 3766 and 3776.

FIG. 37C shows a schematic diagram of a pixel circuit 3711. The pixelcircuit 3711 is similar to the pixel circuit 3710, but differs in thatthe circuit 3711 further includes the first and third MOSFET transistors3512 and 3532 of the circuit 3500 of FIG. 35 . The operations of thepixel circuit 3711 is analogous to the operation of the pixel circuit3710, and the operation of the circuit 3500 with respect to the firstand third MOSFETs 3512 and 3532.

Now referring to both FIGS. 37A and 37B, the first and second outputterminals 3760 and 3770 of each of the pixel circuits 3710 are coupledto the shared column buses 3712 and 3713, and the select switches 3764and 3774 of each of the pixel circuits 3710 are controlled through acontrol signal (e.g., ROWSEL) configured to couple at least one pair ofinput transistors 3762 and 3772 to the shared column buses 3712 and3713. For example, a ROWSEL control signal may turn on (i.e., close) theselect switches 3764 and 3774 of the pixel circuits of a row ROW<0>while turning off (i.e., opening) the select switches 3764 and 3774 ofthe pixel circuit of other rows ROW<1> through ROW<M−1>. In turn, thecolumn buses 3712 and 3713 of the circuit 3700 couple the outputvoltages Vout1 and Vout2 to the inputs of the common-mode ADCs 3722 anddifferential-mode ADCs 3732.

A time-of-flight measurement technique involves integrating ToF lightsignals (e.g., light pulses 2812) over an integration period. Thevoltages VFD1 and VFD2 of the capacitors 3756 and 3758 (e.g.,floating-diffusion, MOM, MIM, or MOS capacitors) may change at differentrates during the integration period. A difference VFD1-VFD2 between thetwo voltages, referred to as the differential-mode (DM) voltage,typically corresponds to a ToF signal to be processed for determinationof the ToF information. A common-mode (CM) voltage, defined ask*(VFD1+VFD2) where k is a non-zero proportionality factor such as 0.5,may be used as an indicator of the capacity of the capacitors 3756 and3758, such as the well capacity of floating diffusion capacitors.

A longer integration time typically results in a higher DM voltage,which may improve the depth accuracy from the ToF measurement. However,the longer integration time typically results in a lower CM voltage, asthe capacitors 3756 and 3758 are discharged by the photocurrent for alonger period of time. When the CM voltage drops below a minimumoperation voltage of the pixel circuits, the output signals of the pixelcircuits may become corrupted. For example, CM voltage below a minimumoperation voltage of a floating diffusion capacitor may lead to escapingof electrons from the floating diffusion well, which may lead to aphenomenon known as blooming. As such, care should be taken to preventCM voltage from dropping below a specific voltage, which may be adesign-dependent parameter based on, for example, the minimum operationvoltage of the pixel circuit multiplied by a factor larger than one toprovide an operating margin above the minimum voltage. One way ofpreventing the CM voltage from dropping below the specific voltage is tomonitor the CM voltage using the common-mode ADCs 3722, and terminatethe integration when the CM voltage reaches the specific voltage. Thespecific voltage may be set, for example, by a reference voltage VREF ata gate terminal 3744 of the replica circuit 3740.

Integration time may be dynamically adjusted based on the monitoring ofthe CM voltage. For example, if the CM voltage is determined through thecommon-mode ADCs 3722 to be higher than the reference voltage after atime period (e.g., nominal integration time), the integration time maybe extended, which may improve depth accuracy of the resultingmeasurement. As another example, if the CM voltage is determined throughthe common-mode ADCs 3722 to be lower than the reference voltage withina time period (e.g., nominal integration time), the integration time maybe shortened to prevent corruption of the measurement, such as blooming.

Contributors to the CM voltage include dark current of the switchedphotodetectors of the pixels and ambient photocurrent generated by theswitched photodetectors from ambient light that are not the ToF lightsignals. Different pixels of the circuit 3700 may have different darkcurrent or responsivity due to process variations. Further, differentpixels may receive varying amount of ambient light. As such, differentpixels may have different CM voltage throughout an integration period.Therefore, detecting the CM voltage for every pixel may be advantageous.

FIG. 37D shows a schematic diagram of a common-mode detection circuit3780. The CM detection circuit includes the replica circuit 3740 and thecommon-mode ADC 3722. CM voltage detection for every pixel may beachieved, for example, by implementing an array of the common-mode ADCs3722 as shown, for example, in FIG. 37A.

The common-mode ADC 3722 includes a common mode generator 3724 and anN-bit ADC 3727. The common mode generator 3724 includes a summingjunction 3725 and a multiplier 3726. In some implementations, themultiplier 3726 may be a proportionality factor k of 0.5, and thecombination of the summing junction 3725 and the multiplier 3726 mayprovide a transfer function of 0.5*(Vout1+Vout2). In this case, themultiplier 3726 is configured to generate an output voltage of amplitudethat is 50% of the input signal. The multiplier 3726 may be implemented,for example, as an operational-amplifier multiplier or as a resistivevoltage divider. Other implementations of the common mode generator 3724are possible. For example, an operational-amplifier based averagingcircuit may be used to generate an average of the two input voltagesVout1 and Vout2.

The N-bit ADC 3727 may be a differential analog-to-digital converterwith N bits of conversion resolution. The ADC 3727 operates bygenerating a difference of the two inputs voltages present at its twoinput terminals 3728 a and 3728 b, and converting the difference voltageto one of 2N fractions of a full scale of the ADC 3727. In someimplementations, the ADC 3727 may be a 1-bit ADC 3727. In such cases,digitalized output at output terminal 3729 of the ADC 3727 may be eithera 1 or a 0, indicating which of the two inputs signals at the terminals3728 a and 3728 b is larger. Such operation of a 1-bit ADC may beanalogous to operation of a comparator. The complexity of the ADC 3727generally depends on its resolution N, with lower N typicallycorresponding to lower circuit complexity, size, power consumption, orcombination thereof. As such, use of a low-resolution ADC 3727 maybebeneficial to reduce overall complexity, size, power consumption, orcombination thereof of the circuit 3700.

The replica circuit 3740 includes an input MOSFET transistor 3742, acurrent source 3746, and a switch 3748. The replica circuit 3740 issimilar in operation to the source follower circuits 3560 and 3570 ofFIG. 37B. The reference voltage VREF is provided to the gate terminal3744 of the input MOSFET 3742, and an output voltage VREP thatcorresponds to the reference voltage VREF is generated at the replicaoutput terminal 3749. The replica circuit is configured such that thetransfer function between the VREF provided at the gate terminal 3744and the VREP generated at the replica output terminal 3749 is identicalor substantially similar (e.g., within 1%, 2%, 5%, 10%, or withinprocess variation window) to the transfer function of the sourcefollower circuits 3560 and 3570. Such a matched transfer function allowsdirect comparison of the voltages VFD1 and VFD2 present at the inputterminals of the source follower circuits 3560 and 3570 with thereference voltage VREF, as any nonlinearity or voltage offsets in theoutputs of the pixel circuits 3710 are equally present in the output ofthe replica circuit 3740. As such, the replica voltage VREP may be usedas a proxy for comparing against, monitoring, and/or controlling the CMvoltage present at the capacitors 3756 and 3758.

To enhance matching between the source follower circuits 3560 and 3570and the replica circuit 3740, the input MOSFET 3742, the current source3746, and the switch 3748 may be similar or identical in design to theMOSFETs 3762/3772, select switch 3764/3774, and the current source3766/3776.

FIG. 37E shows an example timing diagram associated with operation ofthe circuit 3700. The circuit 3700 may have two operationsteps—integration step, and readout step. The operation of the circuit3700 may be controlled, for example, by the receiver unit 2804 or theprocessing unit 2806 of the imaging system 2800. In the integrationsstep, a ToF transmitter unit, such as the transmitter unit 2802 of FIG.28A, may emit light pulses. The pixel circuit 3710 may receive lightthat includes both ambient light and a reflection of the emitted lightpulses. The reflected pulses have a phase shift of Φ corresponding tothe round-trip phase. In general, the relative proportion of the ambientlight and the reflected light pulses may depend on various factors suchas reflectivity of the object being measured, distance from the object,brightness of the measurement environment, and spectral characteristicsof the ambient light.

The pixel circuit 3710 and the switched photodetector 3550 of the pixelcircuit 3710 are controlled using a first control signal GO and a secondcontrol signal G180 such that the capacitor 3756 collects charges Q1 ina phase synchronized manner with the emitted light pulses, and thecapacitor 3758 collects charges Q2 in an out-of-phase manner (e.g., witha 180 degree phase offset) with respect to the emitted light pulses. Forexample, the control terminals 3154 and 3164 of the ToF pixel 3140 ofFIGS. 31A-31I may be used to control the collection of the charges Q1and Q2 through application of the control signals GO and G180.

At the beginning of the integration step, the capacitors 3756 and 3758are charged to a preset voltage. At this time, VFD1 corresponding to thevoltage of the first capacitor 3756 and VFD2 corresponding to thevoltage of the second capacitor 3758 are the same, and the common-modevoltage is equal to VFD1 or VFD2. When the first pulse of emitting lightis reflected and received by the switched photodetector 3550, charges Q1corresponding to the portion of the reflected light that falls withinthe first phase window marked by the first control signal GO (e.g., 0 to180 degrees) are integrated by the first capacitor 3756. As a result,VFD1 decreases while GO is high as Q1 is discharged from the firstcapacitor 3756, and VFD2 remains approximately unchanged throughout thefirst phase window, as the charges are mostly being directed to thefirst capacitor 3756.

Then, the control signal GO becomes low and the control signal G180becomes high, during which charges Q2 corresponding to the portion ofthe reflected light that falls within the second phase window marked bythe second control signal G180 (e.g., 180 to 360 degrees) are integratedby the second capacitor 3758. As a result, VFD2 decreases while G180 ishigh as Q2 is discharged from the second capacitor 3758, and VFD1remains approximately unchanged throughout the second phase window, asthe charges are mostly being directed to the second capacitor 3758.

The discharging of the first and second capacitors 3756 and 3758continues over the integration step, resulting in a common-mode voltageand a differential-mode voltage at the end of the integration period.The common-mode voltage includes contributions from the dark current andthe photo-generated current that includes the signal component and theambient light component. As such, the common-mode voltage is generallyproportional or corresponds to a magnitude of the current generated bythe switched photodetector 3550 over the integration period. It is notedthat the ambient light component and the dark current are typicallysubstantially constant over the integration step, which may be 100 s ofμs to milliseconds in duration. As such, the ambient light component andthe dark current are typically integrated in equal amounts in both thefirst and second capacitors 3756 and 3758, and contributes to thecommon-mode voltage but not the differential-mode voltage.

Once the integration step is completed, the circuit 3700 enters thereadout step, during which the rows of the pixel circuits 3710 aresequentially read out and digitized by the rows of common-mode ADCs 3720and differential-mode ADCs 3730. The output of the common-mode ADCs 3722corresponds to VCM, which may be used, among others, as an indicator ofthe reserve capacity of the capacitors 3756 and 3758, dark current ofthe photodetector, and ambient light level. The output of thedifferential-mode ADCs 3732 corresponds to the differential-mode signal,which may contain time-of flight information that can be used todetermine a distance of an object from the ToF imaging system.

One of the advantages of the circuit 3700 in including separate rows ofcommon-mode and differential-mode ADCs 3720 and 3730 is that thecommon-mode voltage and the differential-mode voltage may be measuredconcurrently without incurring delays due to the dedicated ADCs forrespective purposes. In contrast, additional delays are expected in aserial measurement approach, which may involve digitization of one ofthe outputs of the pixel circuit 3710 (e.g., Vout1) followed bydigitization of the other output (e.g., Vout2), and calculating thecommon-mode voltage in the digital domain. As such, the concurrentmeasurement capability of the circuit 3700 may have a higher frame ratethan a comparable circuit implementing a serial measurement approach.

The resolution of the common-mode ADCs 3722 can be tailored to thespecific requirements for common-mode voltage monitoring, which aregenerally lower than the resolution needed for the differential-modeADCs. As such, complexity and size of the common-mode ADCs 3722 may beoptimized for a given application. For example, common-mode monitoringduring the integration step may be implemented to dynamically controlthe integration period. Such monitoring may require multiple common-modevoltage measurements within the integration period. Fast ADC conversionrate needed for such an application may be achieved by implementing alow bit (e.g., ranging from 1 to 6 bits) common-mode ADCs 3722.

The common-mode and differential-mode voltage measurement capability ofthe circuit 3700 may be used during the production testing of thecircuit 3700. During a typical image sensor production testing,performance of each pixel is verified. This production testing may beused to screen out bad pixels with performance parameters that falloutside the specification. Such production testing data can be analyzedto determine a statistical trend, which may be used to adjust theproduction process to improve yield.

FIG. 37F shows an example of a flow diagram 3790 for characterizingperformance of a time-of-flight detection apparatus including aphotodetector having a first readout terminal coupled with a firstreadout circuit and configured to output a first readout voltage, and asecond readout terminal coupled with a second readout circuit andconfigured to output a second readout voltage. The process 3790 may beperformed by a system such as the testing apparatuses 3600 and 3660.

The system measures a dark current of the photodetector by measuring acommon-mode output signal between the first and second readout voltagesin absence of ambient light and a time-of-flight optical signal (3791).One of the key performance parameter of the pixels of an image sensor,such as the ToF detection apparatus, is the dark current. The darkcurrent may be indirectly measured by the system using the common-modeADCs 3722. The common-mode voltage may be primarily generated fromambient photocurrent and pixel dark current. As such, performing a CMvoltage measurement in absence of light, such as ambient light and ToFoptical signal (e.g., light pulses), results in a CM voltage thatcorresponds to the dark current of the pixel. A post-processing of theN-bit output of the common-mode ADC 3722 based on known design factorsof the circuit 3700 (e.g., parasitic capacitances) and operatingparameters (e.g., integration time period, reference voltage, andreplica voltage) can be performed to determine (e.g., infer, backcalculate) the dark current of the pixel.

In some implementations, the value of the dark current may be determinedto a desired accuracy using a low-resolution common-mode ADC 3722, suchas a 1-bit common-mode ADC 3722. For example, the step 3791 may includethe step of (i) performing, through a 1-bit ADC, one or moremeasurements of the common-mode output signal between the first andsecond readout voltages in absence of ambient light and thetime-of-flight optical signal, and (ii) determining the dark currentbased on the one or more measurements of the common-mode output signal.The measurements of the dark current may be performed under differenttest conditions. For example, each of the one or more measurements maycorrespond to different integration times.

For a given dark current, longer integration times will lead to furtherdischarging of the capacitors 3756 and 3758 and a lower common-modevoltage. The 1-bit common-mode ADC 3722 compares the common-mode voltageVCM with the reference voltage VREF input to the replica circuit 3740.For example, the output of the common-mode ADC 3722 may be 1 when the CMvoltage is higher than the replica voltage. In the case where theintegration times are progressively increased, the ADC outputs for darkcurrent measurements at different integration times may initially be 1s. When the output of the common-mode ADC 3722 changes from 1 to 0indicating that the CM voltage is lower than the replica voltage, thesystem may determine the integration time corresponding to thetransition from 1 to 0, and use that integration time period todetermine the dark current. For example, when the output was a 1 for anintegration time of 90 μs but a 0 for the next integration time of 100μs, the system may use the mid-point 95 μs between the integration timeperiods as the switching point.

The system may determine an estimate of the dark current based on knowndesign factors of the circuit 3700 (e.g., capacitance of the capacitors3756 and 3758) and operating parameters (e.g., preset voltage of thecapacitors, reference voltage, and replica voltage). For example, thedark current may be estimated by the equation Idark=C*ΔV/tint, where Cis the total capacitance of the capacitors 3756 and 3758, ΔV is thedifference between the preset voltage of the capacitors and thereference voltage, and tint is the integration time period when outputof the common-mode ADC 3722 switched from 1 to 0. The accuracy of thedark current measurement through a 1-bit ADC can be further improved byperforming additional measurements with multiple integration times tonarrow down and find an improved estimate of the integration time inwhich the output of the ADC has switched from 1 to 0.

In general, the integration times for the multiple measurements of darkcurrent through the 1-bit ADC may be varied in different ways. Forexample, successive approximation technique may be used.

While dark current measurement based on variable integration time hasbeen described, in some implementations, the replica voltage provided tothe common-mode ADC 3722 may be varied in place of the integration timeperiod for analogous operation.

In some implementations, ambient photocurrent can be determined throughthe CM voltage measurement by performing the CM voltage measurement inpresence of ambient light. The dark current component of the CM voltagemay be subtracted from the measured CM voltage to determine the ambientphotocurrent from the CM voltage.

The system determines that the dark current of the photodetector isgreater than a first value (3792). For example, the first value may be amaximum allowed dark current specification for the pixels of the imagesensor.

In some implementations, the system measures a demodulation contrast ofthe time-of-flight detection apparatus by measuring a differential-modeoutput signal between the first and second readout voltages in presenceof a time-of-flight optical signal (3793). The demodulation contrastrepresents how efficiently a switched photodetector, for example, shownin FIG. 1A, to guide the generated photocurrent toward the n-dopedregion 126 when the switch 108 is on and the switch 110 is off, ortoward the n-doped region 136 when the switch 110 is on and the switch108 is off. The differential-mode output signal is generallyproportional to demodulation contrast, quantum efficiency,time-of-flight optical signal power, and integration time. As such,multiple measurements under different testing conditions such asdifferent optical signal powers can be performed to determine thedemodulation contrast. Different optical signal powers may be provided,for example, through adjusting duty cycles or extinction ratios. Apost-processing of the output of the differential-mode ADC 3732 based onknown design factors of the circuit 3700 (e.g., parasitic capacitances)and operating parameters (e.g., integration time period, laser power)can be performed to determine the demodulation contrast of the pixel.

In some implementations, the system determines that the demodulationcontrast of the time-of-flight detection apparatus is lower than asecond value (3794). For example, the second value may be a minimumallowed demodulation contrast specification for the pixels of the imagesensor.

The system determines that the time-of-flight detection apparatus doesnot meet a performance specification (3795). For example, thedetermination may be based on the determination of step 3792 that thatthe dark current of the photodetector is greater than the first value.As another example, the determination may be based on the determinationof step 3794 that the demodulation contrast of the time-of-flightdetection apparatus is lower than a second value. In general, when ameasured performance parameter of the ToF detection apparatus does notmeet one or more of the performance specifications, the apparatus isdetermined to not meet the performance specification and to have failedthe production testing.

So far, various aspects of the components associated with and testing ofthe receiver unit 2804 of the imaging system 2800 of FIG. 28A have beendescribed. Now, a driving circuitry associated with the transmitter unit2802 of FIG. 28A will be described.

Referring back to FIGS. 28B and 28C, the transmitter unit 2802 may emitlight pulses 2812 modulated at the frequency fm with a preset dutycycle. An increase of the frequency fm, a reduction of the duty cycle,or a combination thereof may improve the performance of the imagingsystem 2800. Such increase in fm or reduction in the duty cycle can beachieved by improving the bandwidth of the transmitter unit 2802.

FIG. 38A shows a schematic diagram of a circuit 3800 for operating alight emitting device. The circuit 3800 includes a light emitting device3810, a MOSFET transistor 3820, a first inductor 3830, a second inductor3832, a first capacitor 3840, a current source 3850, and an input buffer3860. An input signal applied to an input node 3862 of the input buffer3860. An output terminal of the input buffer 3860 is coupled to a firstterminal of the first capacitor 3840. A second terminal of the firstcapacitor 3840 is coupled to a first terminal of the second inductor3832 and a gate terminal of the MOSFET 3820. A second terminal of thesecond inductor 3832 is supplied with a DC bias voltage 3834. A sourceterminal of the MOSFET 3820 is coupled to a first supply voltage node3870, and a first terminal (e.g., a cathode) of the light emittingdevice 3810 is coupled to a second supply voltage node 3871. The firstand second supply voltage nodes 3870 and 3871 may be a common groundnode. A drain terminal of the MOSFET 3820 and a second terminal (e.g.,an anode) of the light emitting device 3810 are coupled to a firstterminal of the first inductor 3830. The current source 3850 is coupledto a supply voltage node 3872 and a second terminal of the firstinductor 3830.

The basic principle of operation of the circuit 3800 is as follows. Theinput signal applied to the input node 3862 of the input buffer 3860 isbuffered by the input buffer 3860 and output to the first capacitor3840. The input signal at the input node 3862 is typically atime-varying signal, and may have a DC component DC1 in addition to anAC component. The input buffer 3860 may independently contribute a DCcomponent to the buffered input signal. As a result, the output of theinput buffer 3860 may contain both a DC component and an AC component.The first capacitor couples the buffered input signal by blocking a lowfrequency component of the buffered input signal. As such, the firstcapacitor 3840 may be referred to as a DC-blocking capacitor or anAC-coupling capacitor. A first capacitance of the first capacitor 3840may be set based on, for example, a desired low frequency cutoff. As aresult of the AC-coupling, the signal present at the second terminal ofthe first capacitor 3840 does not have the DC1 component.

Typically, the gate terminal of the MOSFET 3820 needs to be biased to acorrect DC bias voltage for proper operation. The DC bias of the MOSFET3820 may affect the duty cycle of the light generated by the lightemitting device 3810. As such, setting of the DC bias can be used tomodify the duty cycle or correct for duty cycle distortion that deviatesfrom a desired duty cycle (e.g., 50%). Such DC bias is set through thesecond inductor 3832. The second inductor 3832 presents a low impedancepath for a DC bias voltage 3834 (DC2) coupled to its second terminalwhile simultaneously presenting a high impedance path for the ACcomponent. A second inductance of the second inductor 3832 may be setbased on, for example, the frequency of the AC component of the inputsignal received at the input node 3862. The first capacitor 1540 and thesecond inductor 3832 may be referred to as a bias-T. Due to theoperations of the first capacitor 3840 and the second inductor 3832, asignal containing the AC component of the input signal supplied to theinput node of the input buffer 3860 and the DC component DC2 supplied tothe second terminal of the second inductor 3852 is input to the gateterminal of the MOSFET 3820. The input signal to the gate terminaloperates to turn on or turn off the MOSFET 3820. For example, when thegate terminal input signal is above the threshold voltage of the MOSFET3820, the MOSFET 3820 is turned on, and vice versa.

The MOSFET 3820 is coupled to the first terminal of the first inductor3830 in parallel with the light emitting device 3810. As such, a currentprovided by the current source 3850 and flowing through the firstinductor 3830 may flow through the MOSFET 3820, the light emittingdevice 3810, or combination thereof based on the electrical impedancesof the two elements. For example, the MOSFET 3820 in an ON-state maypresent a significantly lower impedance than the light emitting device3810. As such, a large portion of the current flows through the MOSFET3820 when the MOSFET 3820 is in its ON-state. Conversely, the MOSFET3820 in an OFF-state may present a significantly higher impedance thanthe light emitting device 3810. As such, a large portion of the currentflows through the light emitting device 3810 when the MOSFET 3820 is inits OFF-state. Such switching of the flow of the current may be referredto as shunt switching. Based on the characteristics of the MOSFET 3820and the light emitting device 3810, the relative impedances between thetwo components may approximate the asymptotic case where the majority ofthe current (e.g., 90%, 99%, 99.9%) flows through either the MOSFET 3820or the light emitting device 3810.

When the MOSFET 3820 is being switched on or off, effective impedance ofthe electrical load as experienced by the current source 3850 changesrapidly, which may have a destabilizing effect on the constant currentoperation of the current source 3850. The first inductor 3830 may limitthe temporal rate of change of the current flowing through, therebyoperating as a stabilizing element that helps maintain the current at aconstant level through such switching transients.

The light emitting device 3810 may be a light emitting diode, a laserdiode, an array of light emitting diodes, or an array of laser diodes.In general, the light output by the light emitting device 3810, such asa laser diode, increases in proportion with an increase in the currentsupplied to the device. As such, the size or area of the MOSFET 3820 maybe increased for higher current handling capacity to allow switching ofhigher amount of current. However, an increase in the size of area ofthe MOSFET 3820 increases a parasitic capacitance 3822 associated withthe MOSFET 3820. For example, the parasitic capacitance 3822 may includea parasitic capacitor between the gate terminal and the source terminal(CGS) and a parasitic capacitor between the gate terminal and the drainterminal (CGD). Such parasitic capacitance 3822 increases a capacitiveloading of the MOSFET 3820, reducing the operational bandwidth (e.g.,switching speed) of the MOSFET 3820.

The second inductor 3832, in addition to providing a path for settingthe DC bias of the MOSFET 3820, may form an LC tank in combination withthe parasitic capacitances 3822. The second inductance of the secondinductor 3832 may be set such that a resonance frequency of the LC tankmatches the desired operational frequency of the circuit 3800. Forexample, the resonance frequency of the LC tank may be set to thefundamental frequency of the input signal (e.g., the frequency fm). Theresonance of the LC tank may partially or completely cancel the effectsof the parasitic capacitance 3822, increasing the operational bandwidthof the MOSFET 3820 and thereby the operation bandwidth of the circuit3800. For example, the operation bandwidth of the circuit 3800 may rangefrom 100 MHz to 1 GHz.

While an implementation of the circuit 3800 including the current source3850 has been described, in some implementations, the current source3850 may be omitted such that the supply voltage node 3872 supplies thecurrent to the light emitting device 3810.

FIG. 38B shows a schematic diagram of a circuit 3880 for operating thelight emitting device 3810. The circuit 3880 is similar to the circuit3800, but differs in that the light emitting device 3810 is nowconnected in series with the MOSFET 3820, and the current source 3850and the first inductor 3830 have been omitted. The drain terminal of theMOSFET 3820 is coupled to the first terminal (e.g., a cathode) of thelight emitting device 3810, and the second terminal (e.g., an anode) ofthe light emitting device 3810 is coupled with the supply voltage node3872. The circuit 3880 controls the operation of the light emittingdevice 3810 by series-switching of the current flowing through the lightemitting device 3810.

When the MOSFET 3820 is in the ON-state, a current is allowed to flowthrough a conduction path from the supply voltage node 3872 (e.g., VDD)to the supply voltage node 3870 (e.g., GND) through the light emittingdevice 3810 and the MOSFET 3820. Conversely, the MOSFET 3820 in theOFF-state blocks current from flowing through itself, thereby cuttingoff the flow of current through the light emitting device 3810. Theseries-switching configuration of circuit 3880 may be advantageous as itincludes less electrical components relative to the shunt-switchingconfiguration of circuit 3800.

A number of implementations have been described. Nevertheless, it willbe understood that various modifications may be made without departingfrom the spirit and scope of the disclosure. For example, various formsof the flows shown above may be used, with steps re-ordered, added, orremoved.

Various implementations may have been discussed using two-dimensionalcross-sections for easy description and illustration purpose.Nevertheless, the three-dimensional variations and derivations shouldalso be included within the scope of the disclosure as long as there arecorresponding two-dimensional cross-sections in the three-dimensionalstructures.

While this specification contains many specifics, these should not beconstrued as limitations, but rather as descriptions of featuresspecific to particular embodiments. Certain features that are describedin this specification in the context of separate embodiments may also beimplemented in combination in a single embodiment. Conversely, variousfeatures that are described in the context of a single embodiment mayalso be implemented in multiple embodiments separately or in anysuitable subcombination. Moreover, although features may be describedabove as acting in certain combinations and even initially claimed assuch, one or more features from a claimed combination may in some casesbe excised from the combination, and the claimed combination may bedirected to a subcombination or variation of a subcombination.

Similarly, while operations are depicted in the drawings in a particularorder, this should not be understood as requiring that such operationsbe performed in the particular order shown or in sequential order, orthat all illustrated operations be performed, to achieve desirableresults. In certain circumstances, multitasking and parallel processingmay be advantageous. Moreover, the separation of various systemcomponents in the embodiments described above should not be understoodas requiring such separation in all embodiments, and it should beunderstood that the described program components and systems maygenerally be integrated together in a single software product orpackaged into multiple software products.

Thus, particular embodiments have been described. Other embodiments arewithin the scope of the following claims. For example, the actionsrecited in the claims may be performed in a different order and stillachieve desirable results.

1.-20. (canceled)
 21. A photodetection device comprising: a firstsubstrate comprising: one or more first capacitors; and a photodetectorpixel comprising: an absorption region configured to receive light andgenerate photo-carriers, and one or more readout terminals configured tocollect a portion of the photo-carriers; and a second substrate bondedto the first substrate, the second substrate comprising: one or moresecond capacitors; and pixel transistors configured to collectphoto-carriers from the one or more readout terminals, wherein the pixeltransistors comprise: one or more readout transistors electricallycoupled to the one or more readout terminals of the first substrate,wherein the one or more readout transistors are electrically coupled tothe one or more first capacitors of the first substrate and the one ormore second capacitors of the second substrate.
 22. The photodetectiondevice of claim 21, wherein the one or more first capacitors comprise aplurality of first sub-capacitors, wherein the one or more secondcapacitors comprise a plurality of second sub-capacitors, and whereinone of the plurality of first sub-capacitors and one of the plurality ofsecond sub-capacitors are electrically coupled in a parallelconfiguration and electrically coupled to a same readout transistor ofthe one or more readout transistors.
 23. The photodetection device ofclaim 21, wherein the photodetector pixel further comprises one or morecontrol terminals configured to control a flow of photo-carriers to theone or more readout terminals, and wherein the pixel transistors furthercomprise one or more control transistors electrically coupled to the oneor more control terminals and configured to provide one or more controlsignals to the one or more control terminals.
 24. The photodetectiondevice of claim 21, wherein the photodetector pixel is a back-sideilluminated pixel where the light enters the photodetector pixel from abackside of the first substrate opposite to a front side of the firstsubstrate on which the photodetector pixel is fabricated.
 25. Thephotodetection device of claim 21, wherein the one or more readouttransistors of the pixel transistors comprise a readout circuit having athree-transistor configuration including a reset transistor, asource-follower transistor, and a row-select transistor.
 26. Thephotodetection device of claim 21, wherein the one or more firstcapacitors and the one or more second capacitors comprise at least oneof parallel plate capacitors, floating diffusion capacitors,metal-oxide-semiconductor (MOS) capacitors, metal-oxide-metal (MOM)capacitors, or metal-insulator-metal (MIM) capacitors.
 27. Thephotodetection device of claim 21, wherein the one or more firstcapacitors and the one or more second capacitors are each implemented asa bank of capacitors in parallel.
 28. The photodetection device of claim21, wherein each of the one or more readout transistors comprises asource terminal and a drain terminal, wherein the one or more readouttransistors comprise first readout transistors and second readouttransistors, wherein the one or more first capacitors are electricallycoupled to the source terminal or the drain terminal of the firstreadout transistors, and wherein the one or more first capacitors areelectrically coupled to the source terminal or the drain terminal of thesecond readout transistors.
 29. The photodetection device of claim 21,wherein the first substrate and the second substrate are bonded bymetal-to-metal bonding, oxide-to-oxide bonding, or hybrid bonding. 30.The photodetection device of claim 21, wherein the one or more firstcapacitors and the one or more second capacitors are electricallycoupled to respective readout terminals of the one or more readoutterminals of the photodetector pixel without intervening transistors.31. The photodetection device of claim 21, wherein the first substratecomprises silicon, wherein the absorption region of the photodetectorpixel comprises germanium, and wherein the one or more readout terminalsof the photodetector pixel comprise germanium.
 32. The photodetectiondevice of claim 21, wherein the first substrate comprises silicon,wherein the absorption region of the photodetector pixel comprisesgermanium, and wherein the one or more readout terminals of thephotodetector pixel comprise silicon.
 33. The photodetection device ofclaim 21, wherein the absorption region of the photodetector pixel isembedded in the first substrate.
 34. A photodetection device comprising:a first substrate comprising: one or more first capacitors; aphotodetector pixel comprising: an absorption region configured toreceive light and generate photo-carriers; and one or more readoutterminals configured to collect a portion of the photo-carriers; andpixel transistors configured to collect photo-carriers from the one ormore readout terminals, wherein the pixel transistors comprise: one ormore readout transistors electrically coupled to the one or more readoutterminals; and a second substrate bonded to the first substrate, thesecond substrate comprising: one or more second capacitors, wherein theone or pixel transistors are electrically coupled to the one or morefirst capacitors of the first substrate and the one or more secondcapacitors of the second substrate.
 35. The photodetection device ofclaim 34, wherein the one or more first capacitors comprise a pluralityof first sub-capacitors, wherein the one or more second capacitorscomprise a plurality of second sub-capacitors, and wherein one of theplurality of first sub-capacitors and one of the plurality of secondsub-capacitors are electrically coupled in a parallel configuration andelectrically coupled to a same readout transistor of the one or morereadout transistors.
 36. The photodetection device of claim 34, whereinthe photodetector pixel further comprises one or more control terminalsconfigured to configured to control a flow of photo-carriers to the oneor more readout terminals, and wherein the pixel transistors furthercomprise one or more control transistors electrically coupled to the oneor more control terminals and configured to provide one or more controlsignals to the one or more control terminals.
 37. The photodetectiondevice of claim 34, wherein each of the one or more readout transistorscomprises a source terminal and a drain terminal, wherein the one ormore readout transistors comprise first readout transistors and secondreadout transistors, wherein the one or more first capacitors areelectrically coupled to the source terminal or the drain terminal of thefirst readout transistors, and wherein the one or more first capacitorsare electrically coupled to the source terminal or the drain terminal ofthe second readout transistors.
 38. The photodetection device of claim34, wherein the one or more first capacitors and the one or more secondcapacitors are electrically coupled to respective readout terminals ofthe one or more readout terminals of the photodetector pixel withoutintervening transistors.
 39. The photodetection device of claim 34,wherein the first substrate comprises silicon, wherein the absorptionregion of the photodetector pixel comprises germanium, and wherein theone or more readout terminals of the photodetector pixel comprisegermanium.
 40. The photodetection device of claim 34, wherein the firstsubstrate comprises silicon, wherein the absorption region of thephotodetector pixel comprises germanium, and wherein the one or morereadout terminals of the photodetector pixel comprise silicon.